Learn How Victory Atomistic TCAD Solution Can Help You Succeed at Prototyping Atomistic Nanoscale Devices
Ultra-scaled Field-Effect Transistor (FET) technology requires simulations at the atomic scale for designing the most advanced technological architectures at 5 nm node and below. Thanks to Victory Atomistic’s combination of non-equilibrium Green’s functions (NEGF) and state-of-the-art band structure calculations, versatile, predictive, and fast simulations become accessible. To illustrate Victory Atomistic usage, we will use a silicon Nanowire Field-Effect Transistor (NWFET) with a small cross-section, including several electron-phonon scattering mechanisms, within the self-consistent Born approximation, and optimized by a generalized low-rank projection.
We will show how simulating NWFETs becomes easy to perform, even without full academic knowledge of the NEGF theory; the complexity is hidden inside the simulation tool which benefits from years of development at the highest level, Victory Atomistic optimization allows users to obtain a meaningful I(V) curve daily, and its integration within the Silvaco environment provides a smooth transition for TCAD users.
What You Will Learn
- Why atomistic simulation becomes necessary at low scale
- How to set up the Victory Atomistic TCAD environment
- Nanowire FET: Simulation capabilities of Victory Atomistic
- Performances, visualization of results, and extension to other configurations