• 技术刊物 Simulation Standard

Simulation Standard

Silvaco面向半导体工艺和器件仿真工程师推出的技术刊物

A Model for Boron T.E.D. in Silicon: Full Couplings of Dopant with Free and Clustered Interstitials

In this contribution we present a model for transient enhanced diffusion of boron in silicon. This model is based on the usual pair diffusion mechanism including non-equilibrium reactions between the dopant and the free point defects, taking into account their various charge states. In addition to, and fully coupled with the dopant diffusion we model the growth and dissolution of the interstitials and boron interstitials clusters associated with the anneal of the self-interstitial supersaturation created by the implantation step. It is thus possible to simulate a rather large set of experimental conditions, from conventional predeposition steps, to RTA after low energy implantation.

Breakdown Analysis of a Body-Contacted Submicron High Electron Mobility Transistor

Interest continues to grow in the development of high electron mobility transistor (HEMT) technologies for micrometer and millimeter wave power applications. A primary concern of device designers working with such technologies is the breakdown behavior in both the on- and off-states. As is the case for most field-effect transistors, reducing device dimensions results in a larger internal electric field near the drain-end of the device?s channel. The presence of such a field within the device can affect many areas of device performance including the breakdown characteristics.

QUEST: Frequency-Dependent RLCG Extractor Part 2 – Comparison with Experiments

This article presents a standard case of transmission line: the microstrip structure. First, the structure is described and then the results extracted from QUEST are compared with measurements. We thank STMicroelectronics (Crolles-R&D) for experimental data support.

ATLAS Simulation of a Schottky Contact

ATLAS allows the user to define a contact with a number of different boundary conditions; ohmic, Schottky, current controlled, floating or reflecting. The Schottky contact boundary condition realizes that at the metal semiconductor interface a barrier exists due to the presence of interface states.

Verilog-A Release in SmartSpice

We give in this article an introduction to the Verilog-A SmartSpice interface. This new feature in SmartSpice allows the user to write their own physical models in the Verilog-A language. The first section of the paper gives a brief overview of the Verilog-A language. The second presents the ease of use of simulating transistor models as well as digital circuits with the new Verilog-A SmartSpice interface.

New Ferroelectric Capacitance Model frmc from Ramtron Corporation in SmartSpice

Ramtron International Corporation has developed a ferroelectric capacitance model with a new concept of double distributions of domain reversal voltages.