4 years ago
Investigation of Self-Heating Effects in SOI MOSFETs with Silvaco Numerical Simulation
Self-heating effect may cause over-heated damage and degradation for silicon-on-insulator (SOI) devices, so numerical counting heat generated, and distribution can optimize the radio frequency integrated circuits (RFICs) applications. Both conventional
5 years ago
How Can I Remesh a Structure Using a Custom Volume Mesh in Victory Mesh?
Victory Mesh support for line statements lets the user customize the volume mesh used by conformal remesh schemes. The volume mesh data inherited from Victory Process can be replaced with
5 years ago
Simulation of AlGaInP Multiple Quantum Well LED for Micro Display
The flat panel display industry has been growing rapidly for recent years in mobile display, car display, AR/VR applications, and large-scale TVs display. The core technology enabling these applications is
5 years ago
Relating Platinum Diffusion to Minority Carrier Lifetime Control in PiN Diode: Coupled TCAD Process and Device Simulation
Platinum and gold are widely used as an effective method to control lifetime in silicon-based devices [1, 2, 3]. Platinum and gold are introduced as recombination centers to improve switching
5 years ago
Enabling the Rapid Development of SiC Superjunction-MOSFETs in Collaboration with mi2-factory
Introduction Super-junction based devices are a key enabling technology for power devices. Adjacent columns of p and n-type doped material with optimized doping levels enables box-like electric fields, maximizing the
5 years ago
TCAD Modeling of Amorphous Selenium-based Avalanche Photon Detectors
Abstract— Silvaco TCAD simulations are employed to identify relevant current carrying mechanisms in amorphous selenium (a-Se) based detectors, using parameters obtained from experimental data, density functional theory calculations, and in-house
5 years ago
Singular Point Source MOS Cell Concept (S-MOS) Implemented on a Narrow Mesa Trench IGBT
Abstract— A Singular Point Source MOS (S-MOS) cell concept suitable for power MOS based devices is presented. The S-MOS differs from a standard Planar or Trench MOS cell in the
5 years ago
Singular Point Source MOS Cell Concept (S-MOS) Implemented on a Narrow Mesa Trench IGBT
Abstract— A Singular Point Source MOS (S-MOS) cell concept suitable for power MOS based devices is presented. The S-MOS differs from a standard Planar or Trench MOS cell in the
5 years ago
A Comprehensive Oxide-Based ReRAM TCAD Model with Experimental Verification
Abstract—During the last few years, oxide-based ReRAM technology has attracted intense industrial and scientific research interest. Therefore, we have performed an in-depth computational study with a focus on data retention
5 years ago
2021 TCAD Baseline Release
New Features in 2021 Baseline Release:
- Section 1: Process Simulation
- Section 2: Device Simulation
- Section 3: Victory Mesh
- Section 4: Parasitic Extraction