日志 Gigi Boss

3D TCAD Simulation of Gallium Nitride Tri-gate Junction HEMT

12月 13, 2022在： /通过：

The GaN high electron mobility transistor (HEMT) has been commercialized as a power device with performance superior to Si devices in the voltage classes from 15 V to 900 V [1]. Most of commercial enhancement-mode (E-mode) HEMTs comprise a planar p-GaN gate. Recently, 3-D gate stacks, such as FinFET and tri-gate structures, have been introduced to lateral GaN HEMTs. They can realize superior gate controllability and E-mode operation with a higher current on/off ratio and lower gated channel resistance [2].

User Probes and Arbitrary Parameter Sweeps in Victory Device

9月 16, 2022在： /通过：

One of the new features in Victory Device is the ability to add user managed parameters to a log file. This can be used when sweeping parameters (manually or in a Deckbuild loop), such as doping, stress, or layer thicknesses, to add the swept parameter to a log file. To do so, simply create a USER probe (with an optional name), and set the parameter USER on the MODELS statement to some value. This parameter (and value) will be added to the log file. The available user parameters are USER1, USER2, USER3, and USER4. The following shows a DeckBuild loop (go victoryd) to simulate the effect of varying STRESS_XX on the mobility.

Quantum Transport Simulation at Atomistic Accuracy of a Nanowire FET

8月 23, 2022在： /通过：

The FET physical dimensions continue to shrink to five nm node and below, characterized by new types of architectures with nanosheet (NS) and nanowire (NW) shapes [3]. The present choice of material is made of Si, Ge, or SiGe alloy thanks to their high carrier concentrations. In compliment to III-V technology envisaged for a while, new 2D materials are also investigated (for example, the TMDs monolayers1). Such nanomaterials and nano-architectures require atomistic simulations for at least two crucial reasons: 1) bulk parameters like the effective masses and forbidden bandgap are no longer pertinent quantities, and 2) the wave nature of charge carriers becomes predominant for predicting transport characteristics including scattering events.

2022 TCAD Baseline Release

7月 29, 2022在： /通过：

New Features in the 2022 Baseline Release:

  • Section 1: Process Simulation – New Features in 2022 Baseline Release
  • Section 2: Device Simulation – New Features in 2022 Baseline Release
  • Section 3: Victory Mesh – New Features in 2022 Baseline Release
  • Section 4: Silver – New Features in 2022 Baseline Release