日志 Gigi Boss

Simulation Framework for Device-packaging Co-design for Power Electronics

4月 19, 2023在： /通过：

The past several years has seen a fast deployment of wide-bandgap power devices in fast chargers, electric vehicles, data centers and renewable energy processing. The performance of power devices is fast progressing towards their intrinsic material limit. As these devices can handle higher voltage and larger current density, packaging and thermal management will become the key limiting factor for exploiting their benefits in power electronic converters and systems.

Automatic Grid Refinement for Thin Material Layer Etching in Process TCAD Simulations

2月 9, 2023在： /通过：

The utilization of thin material layers is common in modern semiconductor device fabrication. Subsequent etching steps require an accurate modeling of these thin layers. Although level-set based process TCAD simulations are capable of representing flat thin material layers with sub-grid accuracy, topographical changes during etching processes expose the low underlying grid resolution, which leads to detrimental artifacts.

3D TCAD Simulation of Gallium Nitride Tri-gate Junction HEMT

12月 13, 2022在： /通过：

The GaN high electron mobility transistor (HEMT) has been commercialized as a power device with performance superior to Si devices in the voltage classes from 15 V to 900 V [1]. Most of commercial enhancement-mode (E-mode) HEMTs comprise a planar p-GaN gate. Recently, 3-D gate stacks, such as FinFET and tri-gate structures, have been introduced to lateral GaN HEMTs. They can realize superior gate controllability and E-mode operation with a higher current on/off ratio and lower gated channel resistance [2].