A conventional 2 layer organic light emitting diode consists of a Hole Ttransport Layer (HTL) and an electron transport layer (ETL). A good OLED structure requires sufficient carrier injection so that large exciton density is generated when the carriers recombine. However, a 2-layer OLED structure has a low injection current due to the poor metal/organic material interface and therefore has a low device output efficiency. The electron injection current can be increased by using a different cathode material such as LiF/Al. Unfortunately, LiF/Al metal processing is hard to control and is very sensitive to processing conditions. Also, hole injection is limited by the ITO anode which has a large metal/organic barrier.

Photolithography simulation is a very important part of TCAD. Accurate and predictive lithography simulation saves time and money spent on development and calibration of semiconductor technology processes.

How can I create a non planar structure using III-V materials for Device Analysis when the materials I want to use are not in the ATHENA data base.

Abstract:

High-frequency simulations and characterizations of advanced metal-insulator-metal (MIM) capacitors with ultra thin 32 nm PECVD Si3N4 dielectric are presented. The frequency dependent behavior of capacitors is numerically and experimentally extracted over a wide frequency bandwidth. Numerical results are validated by comparison to experimental results. An equivalent circuit model of capacitors including four parameters is developed for a better understanding of the frequency dependent behavior. We focused on the impact of design on the performances of MIM capacitors realized on Si substrates.

Introduction
The application of microelectromechanical systems (MEMS) to radio-frequency (RF)/microwave systems is on the verge of revolutionizing wireless communications, mainly in the areas of wireless personal communication systems, wireless local area networks, satellite communications, and automotive electronics [1]. In this article we present a brief introduction to the design and fabrication effort at the Engineering Department, University of Cambridge, which is focused on variable RF capacitor MEMS structures. Silvaco 2D/3D process simulation was used to simulate the process flow and reproduce the obtained structures as a first step to future process flow and structure designs.