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TCAD Simulation of Wide Bandgap Power Devices

Simulation of wide bandgap power devices has always posed convergence challenges. In addition to this, the emphasis is shifting to accuracy and calibration of models in relation to manufacturing data. This webinar will focus on simulation of silicon carbide (SiC), gallium nitride (GaN) and gallium oxide (Ga2O3) power devices. For each case, simulation approach and results will be discussed. We will also cover electro-thermal simulation of single-event effects (SEE) and resulting thermal-mechanical stress in SiC power devices, including Schottky diodes, and the latest progress and successful validation of the process simulation capabilities for wide bandgap materials.

What attendees will learn:

  • SiC IEMOSFET simulation
    • Varying interface defect distribution and doping profiles
    • A mobility model including the remote-scattering effect due to interface charges
  • GaN Super HFET simulation
    • Polarization charges, 2DHG, 2DEG at the double-hetero interface GaN/AlGaN/GaN
    • Specification of defects in the GaN buffer layer
    • High-voltage breakdown simulation
  • Ga2O3 MOSFET simulation
    • Novel material affinity, bandgap (4.8eV), and effective density of states (electrons and holes)
    • Heat flow model to simulate electro-thermal effects
    • Validation with experimental data
  • Intrinsic stress effect on AlGaN/GaN device characteristics
  • Electro-thermal simulation of single-event effects (SEE) in SiC power devices and resulting thermal-mechanical stress
  • Latest progress and validation of SiC oxidation models in Silvaco TCAD suite

To view our webinar register to view content.


Dr. Marek Turowski is a Senior Applications Engineer at Silvaco TCAD Division in Santa Clara, California. He has over 25 years of experience in modeling, simulation, and technology computer-aided design (TCAD), multi-domain (electrical, optical, electromagnetic, thermal, and mechanical) analysis, design, and optimization of semiconductor devices and integrated circuits (ICs). He is author or co-author of over 200 papers published in journals and conference proceedings. Senior Member of IEEE. In 1998-2013 he was with CFD Research Corporation (CFDRC) in Huntsville, Alabama, where he led the development of TCAD device simulation tools; in 2013-2015 with Robust Chip Inc. in Pleasanton, California. He led numerous projects involving TCAD for semiconductor devices and ICs, including various environmental effects studies (funded by US Government Agencies, Aerospace industry, NASA, and others).

He received his M.S. and Ph.D. degrees in Electronics Engineering from the Technical University of Lodz, Poland, in 1983 and 1992, respectively. He was a post-doc at the University of Sydney, Australia (1992- 93) and at the University of Kentucky, Lexington, USA (1996-97).

When: June 23, 2016
Where: Online
Time: 10:00am-11:00am-(PST)
Language: English


Process engineers, device engineers and researchers working on wide bandgap power device development