Simulation of Reliability and NBTI Aging in MOS Microelectronics
The continuous scaling of semiconductor devices is a driving force in the field of microelectronics. However, this miniaturization goes hand in hand with various undesired degradation effects, which make a prediction of the MOS device operation less reliable. In particular, the Negative Bias Temperature Instability (NBTI) has attracted much industrial attention due to its severe impact on the device performance. In order to understand, predict, and reduce these degradation effects, TCAD simulations are of high importance.
This webinar will cover several of the most prominent reliability models (available in Silvaco’s TCAD tools). We will review their basic features and key parameters and discuss their correct calibration and comparison to experimental results.
What attendees will learn:
- Capabilities of Silvaco’s TCAD solutions for reliability issues
- Presentation of the most important models
- Discussion of their basic features and key parameters
- How to perform TCAD simulations
- Correct setup of a reliability simulation
- Correct comparison to the experimental data
Dr. Wolfgang Goes is a development engineer in Silvaco’s TCAD Division. Since joining Silvaco in 2016, he has worked primarily on Victory Device but also on Atlas and is responsible for trapping and reliability models.
Dr. Goes holds an MSc in Technical Physics and a PhD in Electrical Engineering, both from the TU Vienna. He continued working there as a post-doc at the Institute for Microelectronics focusing on reliability issues in microelectronic devices.
When: February 28, 2019
WHO SHOULD ATTEND:
Academics, engineers, and management interested in investigations of degradation effects in semiconductor devices.