Resistive RAM Switching Analysis with Victory TCAD Solution

Conventional non-volatile memory technologies, such as Flash, are near their physical limits of scalability. This has created demand for new storage devices. The concept of resistive switching has attracted increasing industrial interest. ReRAM technologies, such as OXRAM and CBRAM, have emerged as promising candidates due to their low power consumption, high endurance, and fast switching times. To improve the understanding of these devices, TCAD simulations can be used to study the chemical processes behind the resistive switching. They allow users to identify key factors controlling the switching behavior and can significantly shorten the development schedules. We will present a comprehensive and flexible ReRAM model, based on the Chemistry Module in Silvaco’s Victory Device simulator.


Dr. Wolfgang GoesDr. Wolfgang Goes is a Senior Software Development Engineer in Silvaco’s TCAD Division. He primarily works on Victory Device TCAD solution and is responsible for designing and implementing models for traps, reliability issues, and memory technologies. Prior to joining Silvaco in 2016, he was a postdoctoral fellow at the Institute for Microelectronics of the Technical University of Vienna, where he focussed on reliability issues in microelectronic devices.

Dr. Goes holds an MSc in Technical Physics and a PhD in Electrical Engineering, both from the Technical University of Vienna.

Who should attend:

Engineers, management and academics, interested in ReRAM storage technology.