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Efficient 3D TCAD Simulation of Silicon Power Devices

It is well known that TCAD simulation can save time and money since it allows process and device engineers to virtually manufacture any type of devices before processing them. Today, a lot of devices are 3D by “nature” and thus need to be simulated using 3D process and device simulators. Furthermore there is interest in simulating larger device structures including cells and termination. In this webinar we will describes new unified 3D TCAD platform and its use to simulate in 3D a vertical LOCOS transistor as well as current filaments in multi-cells IGBT structure.

What attendees will learn:

  • Overview of Victory TCAD Platform
    • Architecture of this new platform
    • 3D rapid prototyping to detailed physical simulation
    • Meshing concept
    • Solvers review
  • Applications
    • Vertical LOCOS Power Devices 2D and 3D cell design
    • 3D current filaments simulation in Multicell IGBTs


Dr. Eric Guichard is Vice President of the TCAD Division. He is responsible for all aspects of the TCAD division from R&D to field operations. Since joining Silvaco in 1995, he has held numerous positions including director of Silvaco France and most recently Director of Worldwide TCAD Field Operations. Prior to joining Silvaco, Dr. Guichard was a senior SOI engineer specialized in aging of transistors and circuits at LETI and Thomson Military and Space.

Dr. Guichard holds an MS in material science and a Ph.D in semiconductor physics from Ecole Nationale Polytechnique de Grenoble, France.

When: April 14, 2016
Where: Online
Time: 10:00am-11:00am-(PST)
Language: English


Power device designers, power device process development and production engineers, power device and materials researchers