Tetrahedral mesh for accurate 3D geometry representation

Voronoi discretization for conformal Delaunay meshes

3D Device Simulator

Victory Device™ enables device technology engineers to simulate the electrical, optical, chemical, and thermal behavior of semiconductor devices. Victory Device provides a physics-based, easy to use, modular, and extensible platform to analyze DC, AC, and time domain responses for silicon, binary, ternary, and quaternary material-based devices in 2 and 3 dimensions. Victory Device is a next-generation 2D and 3D device simulator that uses an advanced tetrahedral meshing engine for fast and accurate simulation of complex 3D geometries. The capabilities of Victory Device allow the characterization and optimization of semiconductor devices for a wide range of technologies.


To enable nanoscale device geometries and future technology nodes, a new generation of device simulation tools that can integrate different methods, process different semiconductor materials, and compute electronic, chemical, thermal transport, and optical properties is required. Device simulation helps users understand and depict the physical processes in a device and to make reliable predictions of the behavior of the next device generation. Device simulations are very useful for predictive parametric analysis of novel device structures. Two- and three-dimensional modeling and simulation processes help users obtain a better understanding of the properties and behavior of new and current devices and helps provide improved reliability and scalability, while also helping to increase development speed and reduce risks and uncertainties.


  • General purpose 2D/3D device simulator
  • Tetrahedral mesh for accurate 3D geometry representation
  • Voronoi discretization for conformal Delaunay meshes
  • Advanced physical models with user-customizable material database for silicon and compound materials
  • Stress-dependent mobility and bandgap models
  • Highly customizable physical models using the C-Interpreter or dynamically linked libraries
  • DC, AC, and transient analysis
  • Drift-diffusion and energy balance transport equations
  • Self-consistent simulation of self-heating effects including heat generation, heat flow, lattice heating, heat sinks, and temperature-dependent material parameters
  • Methods to simulate the electrochemical reaction and transport of an arbitrary number of chemical species
  • Advanced multi-threaded numerical solver library with support for distributed computing
  • Quantum-correction and tunneling models
  • Ray-trace and FDTD optical methods
  • Radiation effects including single event upset (SEU), total dose and dose rate
  • MixedMode circuit/device simulation
  • 64-bit, 80-bit, 128-bit, 160-bit, 256-bit and 320-bit precision
  • Atlas-compatible
  • Silvaco’s secure encryption for maximum customer and third party intellectual property protection


  • Electrical, chemical, thermal and optical characterization of advanced semiconductor devices allows for device performance optimization
  • Understanding the challenges of current technologies leads to reduced product development time
  • Exploration of novel device technologies for next-generation devices



Victory Device’s capabilities allow the electrical and thermal behavior of power devices such as power MOS, LDMOS, SOI, thyristors and IGBTs. The advanced 3D Delaunay mesh, corresponding discretization, and extended precision numerics used by Victory Device allow the stable and accurate simulation of wide bandgap materials such as SiC and GaN. These devices can also be embedded with a circuit and simulated by the built-in SPICE circuit simulator.

3D electric field distribution. Field is maximum at the corner of the trench.

Advanced CMOS

Hot carrier, stress and quantum correction and tunneling models allow for the simulation of advanced CMOS devices such as FinFET and FDSOI.

This 3D FinFET is simulated with a 3D fully unstructured tetrahedral mesh. The mesh is fully automated including refinement on doping and interfaces.

3D FinFET structure


Compound Semiconductor

Support for a wide range of compound materials, such as SiGe, GaAs, AlGaAs, InP, SiC, GaN, AlGaN and InGaN, allow the characterization of complex compound semiconductor devices.


Victory Device’s support for advanced defect models allows the characterization of thin-film devices.

3D TFT A-Si:H IdVg simulation


The optoelectronic response of devices such as solar cells and CMOS image sensors can be simulated using Victory Device. Both ray-trace and FDTD optical method are available.

3D process and device simulation showing the transient response of a CMOS image sensor under dark and illumination conditions is shown below.

Comparison of dark and illuminated sensor output voltage.



Victory Device contains advanced radiation models. Effects such as single event upset (SEU), single event burnout (SEB), total dose and dose rate can be simulated in steady-state, AC and transient.


Victory Device can simulate electrochemical effects, including reactions and transport, using frozen, equilibrium, or transient chemistry. Any number of chemical species and reactions can be defined, using a natural and easy-to-read syntax. This facility may be used for studies of performance degradation, for simulation of complex charge-capture mechanisms, and for the simulation of charge-transport by atomic species, as well as for investigating the behavior of novel devices such as CBRAM and ReRAM.