{"id":65733,"date":"2026-06-30T11:28:19","date_gmt":"2026-06-30T18:28:19","guid":{"rendered":"https:\/\/silvaco.com\/%eb%b6%84%eb%a5%98%eb%90%98%ec%a7%80-%ec%95%8a%ec%9d%8c\/tcad-breakdown-simulation-of-a-1200-v-vertical-gan-finfet\/"},"modified":"2026-10-15T13:52:56","modified_gmt":"2026-10-15T20:52:56","slug":"tcad-breakdown-simulation-of-a-1200-v-vertical-gan-finfet","status":"publish","type":"post","link":"https:\/\/silvaco.com\/ko\/simulation-standard-ko\/tcad-breakdown-simulation-of-a-1200-v-vertical-gan-finfet\/","title":{"rendered":"TCAD Breakdown Simulation of a 1200 V Vertical GaN FinFET"},"content":{"rendered":"

Khaled Ahmeda, Nereus Agbo & Xiang Li
\n<\/i>Research and Development Centre, Dynex Semiconductor Ltd, Doddington Rd, Lincoln LN6 3LF, United Kingdom<\/i><\/p>\n

Abstract<\/span><\/h3>\n

\"\"This paper presents TCAD process, mesh, and device simulations of a 1200 V vertical gallium nitride (GaN) FinFET using Silvaco Victory tools. The simulated structure is based on a previously reported vertical GaN FinFET fabricated on bulk GaN substrates, comprising an n+<\/sup> GaN cap, a lightly <\/span>doped drift region, and an Al2O3 gate dielectric. The process flow is reproduced in Victory Process, followed b<\/span>y mesh generation in Victory Mesh and electrical simulation <\/span>in Victory Device using physical models that include Shockley\u2013Read\u2013Hall recombination, Auger recombination, band-to-band tunnelling, Schottky tunnelling, self-heating, and impact ionization. The simulation reproduces breakdown behaviour at approximately 1200 V, with low drain and gate leakage currents. Analysis of the electric field, impact generation rate, and current density indicates that breakdown is governed by electric-field crowding at the bottom of the fin. These results demonstrate the capability of TCAD simulation to capture the breakdown behavior of vertical GaN FinFETs and provide insight into the critical regions that determine high-voltage performance.<\/span><\/p>\n

\"\"<\/p>\n

Download Simulation Standard<\/a><\/p>\n","protected":false},"excerpt":{"rendered":"

This paper presents TCAD process, mesh, and device simulations of a 1200 V vertical gallium nitride (GaN) FinFET using Silvaco Victory tools<\/p>\n","protected":false},"author":8,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"inline_featured_image":false,"footnotes":""},"categories":[7486],"tags":[],"class_list":["post-65733","post","type-post","status-publish","format-standard","hentry","category-simulation-standard-ko","entry"],"yoast_head":"\nTCAD Breakdown Simulation of 1200V Vertical GaN FinFET<\/title>\n<meta name=\"description\" content=\"Explore TCAD simulation of a 1200V vertical GaN FinFET using Silvaco Victory tools, analyzing breakdown behavior, leakage, and electric field\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" 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