{"id":31714,"date":"2020-02-26T02:17:03","date_gmt":"2020-02-26T02:17:03","guid":{"rendered":"https:\/\/silvaco.com\/%eb%b6%84%eb%a5%98%eb%90%98%ec%a7%80-%ec%95%8a%ec%9d%8c\/compound-devices\/"},"modified":"2020-02-26T02:17:03","modified_gmt":"2020-02-26T02:17:03","slug":"compound-devices","status":"publish","type":"post","link":"https:\/\/silvaco.com\/ko\/tcad-ko\/tcad-published-papers-ko\/compound-devices\/","title":{"rendered":"Compound Devices"},"content":{"rendered":"
\n

Compound Devices<\/h1>\n

The full text for most of these papers may be found at the IEEE website at\u00a0www.ieee.org<\/a>.<\/p>\n

N. Seoane1<\/sup>, M. Aldegunde1<\/sup>, K. Kalna1<\/sup>\u00a0and A. J. Garcia-Loureiro2<\/sup>
\n“MC\/DD study of Metal Grain Induced Currenct Variability in a Nanoscale InGaAs FinFET”,<\/p>\n

    \n
  1. Electronic Systems Design Centre, College of Engineering, Swansea University, Swansea SA2 8PP,
    \nUnited Kingdom<\/li>\n
  2. CITIUS University of Santiago de Compostela, 15782 Santiago de Compostela, Spain<\/li>\n<\/ol>\n

    International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) 2014, pp.253-256<\/p>\n

    T. Ohashi1<\/sup>, K. Suda2<\/sup>, S. Ishihara2<\/sup>, N. Sawamoto2<\/sup>, S. Yamaguchi1<\/sup>, K. Matsuura1<\/sup>, K. Kakushima1<\/sup>, N. Sugii1<\/sup>, A. Nishiyama1<\/sup>, Y. Kataoka1<\/sup>, K. Natori1<\/sup>, K. Tsutsui1<\/sup>, H. Iwai1<\/sup>,A. Ogura2<\/sup>\u00a0and H. Wakabayashi1<\/sup>,
    \n“Multi-Layered MoS2<\/sub>\u00a0Thin Film Formed by High-Temperature Sputtering for Enhancement-Mode nMOSFETs”,<\/p>\n

      \n
    1. Tokyo Institute of Technology 4259 Nagatsuta-cho, Midori-ku, Yokohama, Kanagawa 226-8502, Japan<\/li>\n
    2. Meiji University, 1-1-1 Higashi-Mita, Tama-ku, Kawasaki, Kanagawa, 214-8571, Japan<\/li>\n<\/ol>\n

      International Conference on Solid State Devices and Materials (SSDM) 2014, pp.1074-1075<\/p>\n

      Copyright 2014 The Japan Society of Applied Physics<\/span><\/p>\n

      Xiaoli Ji1<\/sup>, Baiqing Liu1<\/sup>, Hengjing Tang2,3<\/sup>, Xue Li2,3<\/sup>, Ming Shi2,3<\/sup>, Ying Zhou1<\/sup>, Yue Xua, Haimei Gong2,3<\/sup>\u00a0and Feng Yan1<\/sup>,
      \n“The improvement of surface current of 2.6 \u03bcm InGaAs photodetectors by using ICPCVD technology”,<\/p>\n

        \n
      1. College of electronic science & engineering, Nanjing University, Nanjing 210093, China<\/li>\n
      2. Key Laboratory of Infrared Imaging Materials and Devices, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China<\/li>\n
      3. State Key Laboratory of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China<\/li>\n<\/ol>\n

        International Conference on Solid State Devices and Materials (SSDM) 2014, pp.170-171<\/p>\n

        Copyright 2014 The Japan Society of Applied Physics<\/span><\/p>\n

        Toshiyuki Oishi1<\/sup>, Kazuo Hayashi1<\/sup>, Hajime Sasaki1<\/sup>, Yutaro Yamaguchi1<\/sup>, Koon Hoo Teo2<\/sup>, Hiroshi Otsuka1<\/sup>, Koji Yamanaka1<\/sup>, Masatoshi Nakayama1<\/sup>\u00a0and Yasuyuki Miyamoto3<\/sup>,
        \n“Simulation study of gate leakage current under three-terminal operation for AlGaN\/GaN HEMTs”,<\/p>\n

          \n
        1. Mitsubishi Electric Corporation, Japan<\/li>\n
        2. Mitsubishi Electric Research Laboratories (MERL), USA<\/li>\n
        3. Department of Physical Electronics, Tokyo Institute of Technology, Japan<\/li>\n<\/ol>\n

          Kazuhiro Mochizuki and Natsuki Yokoyama,
          \n“Two-Dimensional Analytical Model for Concentration Profiles of Aluminum Implanted in 4H-SiC (0001)”,
          \nIEEE Trans. on Electron Devices, Vol. 58, No.2, p.455, 2011.<\/p>\n

          R.P. Jackson, S.J.N. Mitchell, V. Fusco,
          \n“Physical modeling of millimetre wave signal reflection from forward biased PIN diodes”,
          \nSolid-State Electronics, Vol. 54, Issue 2, February 2010, pp. 149-152.<\/p>\n

          Min-Chang Tu, Herng-Yih Ueng, Yu-Chi Wang,
          \n“Performance of High-Reliability and High-Linearity InGaP\/GaAs HBT PAs for Wireless Communication”,
          \nIEEE Transactions on Electron Devices, Vol. 57 , Issue: 1, 2010, pp. 188 – 194.<\/p>\n

          Yuehang Xu, Yunchuan Guo, Yunqiu Wu, Ruimin Xu, Bo Yan,
          \n“Characterization of high-frequency noise performance of GaN double heterojunction HEMT”,
          \n2010 International Conference on Microwave and Millimeter Wave Technology (ICMMT), 2010, pp. 1606 – 1609.<\/p>\n

          L.N. Ismail, M.A. Pawet, P. S. Mohamad Saad, A. S. Zoolfakar,
          \n“Failure mechanism of silicon germanium (SiGe) technology on 90nm PMOS”,
          \n2010 Intl Conf on Electronic Devices, Systems and Applications (ICEDSA), 2010, pp. 352 – 356.<\/p>\n

          A. Alaeddine, M. Kadi, K. Daoud, B. Beydoun,
          \n“Characteristics degradation of the SiGe HBT under electromagnetic field stress”,
          \nMicroelectronics Reliability, In Press, Corrected Proof, Available online 24 July 2010.<\/p>\n

          Jungwoo Joh, Feng Gao, Tom\u00e1s Palacios, Jes\u00fas A. del Alamo,
          \n“A model for the critical voltage for electrical degradation of GaN high electron mobility transistors”,
          \nMicroelectronics Reliability, Vol. 50, Issue 6, June 2010, pp. 767-773.<\/p>\n

          M. Bawedin, M.J. Uren, F. Udrea,
          \n“DRAM concept based on the hole gas transient effect in a AlGaN\/GaN HEMT”,
          \nSolid-State Electronics, Vol. 54, Issue 6, June 2010, pp. 616-620.<\/p>\n

          Ritesh Gupta, Servin Rathi, Mridula Gupta, R.S. Gupta,
          \n“Microwave performance enhancement in Double and Single Gate HEMT with channel thickness variation”,
          \nSuperlattices and Microstructures, Vol. 47, Issue 6, June 2010, pp. 779-794.<\/p>\n

          Zheng Li, V. Eremin, J. Harkonen, P. Luukka, E. Tuominen, E. Tuovinen, E. Verbitskaya,
          \n“Modeling, simulation and data fitting of the charge injected diodes (CID) for SLHC tracking applications”,
          \nNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 617, Issues 1-3, 11 May 2010-21 May 2010, pp. 552-557.<\/p>\n

          Woo Young Choi,
          \n“Applications of impact-ionization metal\u2013oxide-semiconductor (I-MOS) devices to circuit design”,
          \nCurrent Applied Physics, Vol. 10, Issue 2, March 2010, pp. 444-451.<\/p>\n

          Chi-Woo Lee, Aryan Afzalian, Isabelle Ferain, Ran Yan, Nima Dehdashti Akhavan, Weize Xiong, Jean-Pierre Colinge,
          \n“Influence of gate misalignment on the electrical characteristics of MuGFETS”,
          \nSolid-State Electronics, Vol. 54, Issue 3, March 2010, pp. 226-230.<\/p>\n

          Servin Rathi, Jyotika Jogi, Mridula Gupta, R.S. Gupta,
          \n“Modeling of hetero-interface potential and threshold voltage for tied and separate nanoscale InAlAs\u2013InGaAs symmetric double-gate HEMT”,
          \nMicroelectronics Reliability, Vol. 49, Issue 12, December 2009, pp. 1508-1514.<\/p>\n

          M.C. Tu, Y.C. Wang, H.Y. Ueng,
          \n“Linearity optimizing on HBT power amplifier design”,
          \nMicroelectronics Journal, In Press, Corrected Proof, Available online 20 September 2009.<\/p>\n

          S. Mil’shtein, A. Churi, C. Gil,
          \n“Is HEMT operating in 2D mode?”,
          \nMicroelectronics Journal, Vol. 40, Issue 3, March 2009, pp. 554-557.<\/p>\n

          Ritesh Gupta, Servin Rathi, Ravneet Kaur, Mridula Gupta, R.S. Gupta,
          \n“T-gate geometric (solution for submicrometer gate length) HEMT: Physical analysis, modeling and implementation as parasitic elements and its usage as dual gate for variable gain amplifiers”,
          \nSuperlattices and Microstructures, Vol. 45, Issue 3, March 2009, pp. 105-116.<\/p>\n

          L. Korte, A. Laades, K. Lauer, R. Stangl, D. Schaffarzik, M. Schmidt,
          \n“Surface photovoltage investigation of recombination at the a-Si\/c-Si heterojunction”,
          \nThin Solid Films, In Press, Corrected Proof, Available online 21 February 2009.<\/p>\n

          Juan M Lopez-Gonzalez, Michael Schr\u00f6ter,
          \n“Study of emitter width effects on \u03b2F<\/sub>\u00a0, \u0192T<\/i><\/sub>\u00a0and \u0192max<\/sub>\u00a0of 200 GHz SiGe HBTs by DD, HD and EB device simulation”
          \n2009 Semicond. Sci. Technol. 24 115005.<\/p>\n

          Samrat L. Sabat, Leandro dos Santos Coelho, Ajith Abraham,
          \n“MESFET DC model parameter extraction using Quantum Particle Swarm Optimization”,
          \nMicroelectronics Reliability, Vol. 49, Issue 6, June 2009, pp. 660-666.<\/p>\n

          A. S. Zoolfakar, A. Ahmad,
          \n“Holes mobility enhancement using strained silicon, SiGe technology”,
          \n5th International Colloquium on Signal Processing & Its Applications, CSPA 2009. 6-8 March 2009, pp. 346-349.<\/p>\n

          Yuehang Xu, Yunchuan Guo, Yunqui Wu, Ruimin Xu, Bo Yan,
          \n“Influence of the Al mole fraction on microwave noise performance of AlxGa1-xN\/GaN HEMTs”,
          \nInternational Conference on Communications, Circuits and Systems, ICCCAS 2009. 23-25 July 2009, pp. 759-761.<\/p>\n

          L.-E. Wernersson, M. \u00c4rlelid, M. Egard, E. Lind,
          \n“Gated tunnel diode in oscillator applications with high frequency tuning”,
          \nSolid-State Electronics, Vol. 53, Issue 3, March 2009, pp. 292-296.<\/p>\n

          Jung-Hui Tsai, Shao-Yen Chiu, Wen-Shiung Lour, Wen-Chau Liu, Chien-Ming Li, Ning-Xing Su, Yi-Zhen Wu, Yin-Shan Huang,
          \n“Microwave complementary doped-channel field-effect transistors”,
          \nSuperlattices and Microstructures, Vol. 45, Issue 1, January 2009, pp. 33-38.<\/p>\n

          L. Korte, A. Laades, K. Lauer, R. Stangl, D. Schaffarzik, M. Schmidt,
          \n“Surface photovoltage investigation of recombination at the a-Si\/c-Si heterojunction”,
          \nThin Solid Films, Vol. 517, Issue 23, 1 October 2009, pp. 6396-6400<\/p>\n

          Abdelkader Aliane, F. De Moro, C. Pigot, P. Agnese, X. de la Broise, A. Gasse, X.-F. Navick, M. Karolak, H. Ribot, J. -L. Sauvageot, V. Szeflinski, Y. Gobil, D. Renaud, P. Rivallin, H. Geoffray,
          \n“X-ray micro-calorimeter based on Si thermistors for X-ray astronomy: Design and first measurements”,
          \nJournal of Low Temperature Physics, Proceedings of the 12th International Workshop on Low Temperature Dectectors (LTD12), Vol. 151, No. 1-2 PART 1, April, 2008, Pages 381-386.<\/p>\n

          J. Vobecky, P. Hazdra,
          \n“Dynamic avalanche in diodes with local lifetime control by means of palladium”,
          \nMicroelectronics Journal, Vol. 39, Issue 6, Jun. 2008, pg 878-883.<\/p>\n

          Enrico Furno, Francesco Bertazzi, Michele Goano, Giovanni Ghione, Enrico Bellotti,
          \n“Hydrodynamic transport parameters of wurtzite ZnO from analytic- and full-band Monte Carlo simulation”,
          \nSolid-State Electronics, Vol. 52, Issue 11, November 2008, pp. 1796-1801.<\/p>\n

          B. B. Khina,
          \n“An extended “five-stream” model for diffusion of donor and acceptor dopants in Si during the production of ultrashallow \u03c0-v junctions”,
          \nProceedings of the SPIE – The International Society for Optical Engineering, Vol. 7377, 2008, pp. 737713-73778.<\/p>\n

          Sona P. Kumar, Anju Agrawal, Rishu Chaujar, Mridula Gupta, R.S. Gupta,
          \n“Performance assessment and sub-threshold analysis of gate material engineered AlGaN\/GaN HEMT for enhanced carrier transport efficiency”,
          \nMicroelectronics Journal, Vol. 39, Issue 12, December 2008, pp. 1416-1424.<\/p>\n

          N. Gaurav, S. Bhatnagar, R. Raj, S.De, S. Niranjana, B. S. Satyanarayana,
          \n“Nanocluster carbon thin film as a semiconducting layer and feasibility for device application”,
          \nComputing, Communication and Networking, 2008. ICCCn 2008. International Conference on 18-20 Dec. 2008 pp. 1 – 5.<\/p>\n

          M. Mohiuddin, S. Arshad, A. Bouloukou, M. Missous,
          \n“2-D Physical Modelling of \u00ce\u00b4-doped GaAs\/AlGaAs HEMT”,
          \nAdvanced Semiconductor Devices and Microsystems, 2008. ASDAM 2008. International Conference on 12-16 Oct. 2008 pp. 207 – 210.<\/p>\n

          Tarun Vir Singh, M. Jagadesh Kumar,
          \n“Effect of the Ge mole fraction on the formation of a conduction path in cylindrical strained-silicon-on-SiGe MOSFETs”,
          \nSuperlattices and Microstructures, Vol. 44, Issue 1, Jul. 2008, pp. 79-85.<\/p>\n

          Fortunato Pezzimenti, Francesco G. Della Corte, Roberta Nipoti,
          \n“Experimental characterization and numerical analysis of the 4H-SiC p-i-n diodes static and transient behaviour”
          \nMicroelectronics Journal, In Press, Corrected Proof, Available online 21 March 2008.<\/p>\n

          James G. Champlain, Richard Magno, Mario Ancona, Harvey S. Newman, J. Brad Boos,
          \n“InAs-based heterostructure barrier varactor diodes with In0.3Al0.7As0.4Sb0.6 as the barrier material”,
          \nSolid-State Electronics, Vol. 52, Issue 11, November 2008, pp. 1829-1832.<\/p>\n

          F. Amir, N.Farrington, T. Tauqeer, M. Missous,
          \n“Physical modelling of a step-graded AlGaAs\/GaAs Gunn diode and investigation of hot electron injector performance”,
          \n2008 International Conference on Advanced Semiconductor Devices and Microsystems, pp. 51-54, 2008.<\/p>\n

          Jung-Hui Tsai, I-Hsuan Hsu, Chien-Ming Li, Ning-Xing Su, Yi-Zhen Wu, Yin-Shan Huang,
          \n“Comparison of heterostructure-emitter bipolar transistors (HEBTs) with InGaAs\/GaAs superlattice and quantum-well base structures”,
          \nSolid-State Electronics, Vol. 52, Issue 7, Jul. 2008, pp. 1018-1023.<\/p>\n

          Xiaochuan Deng, Bo Zhang, Zhaoji Li and ZhuangLiang Chen,
          \n“Two-dimensional analysis of the surface state effects in 4H-SiC MESFETs”,
          \nMicroelectronic Engineering, Vol. 85, Issue 2, February 2008, pp. 295-299.<\/p>\n

          B. A. Polash, M. A. Huque, S. K. Islam, H. Huq,
          \n“High temperature performance measurement and analysis of GaN HEMTs”,
          \nProceedings of the SPIE – The International Society for Optical Engineering, Vol. 6894, 7 Feb. 2008, pp. 68941J-1-9.<\/p>\n

          T. Bieniek, J. Steszewski, M. Sochacki, J. Szmidt,
          \n“Electrical simulations of SiC Schottky diodes, Resurf JFET and Resurf MOSFET on silicon carbide substrate (SIC)”
          \nElektronika, Vol. 49, No. 7-8, 2008, pp. 11-15.<\/p>\n

          M. Tayel, A. Alexandria Elgendy,
          \n“An Analytical DC model with self-heating effect for microwave AlGaN\/GaN high electron mobility transistores”,
          \nEngineering Journal. 2007, Vol. 45, No. 6, pp.. 675-680.<\/p>\n

          In-Ho Kang, Wook Bahng, Sang-Cheol Kim, Sung-Jae Joo, Nam-Kyun Kim,
          \n“Numerical Investigation of the DC and RF Performances for a 4H-SiC Double Delta-Doped Channel MESFET having Various Delta-Doping Concentrations”,
          \nMaterials Science Forum. 2007, Vol. 556-557, pp. 823-826.<\/p>\n

          N. Zerounian, M. Enciso-Aguilar, T. Hackbarth, H.-J. Herzog and F. Aniel,
          \n“Modelling and measurements of the parasitic electrostatic capacitances in Si\/SiGe n-HFET”,
          \nSolid-State Electronics, Vol. 51, Issue 3, March 2007, pp. 449-459.<\/p>\n

          Xue-Jun Zheng, Jun-Jie Zhang, Yi-Chun Zhou, Ming-Hua Tang, Bo Yang, Yi-Qiang Chen,
          \n“Simulation of electric properties of MFIS capacitor with BNT ferroelectric thin film using Silvaco\/Atlas”,
          \nTransactions of the Nonferrous Metals Society of China. Vol. 17, No. Special 1, pp. s752-s755. Dec. 2007.<\/p>\n

          B. Vincent, J.-F. Damlencourt, P. Rivallin, E. Nolot, C. Licitra, Y. Morand and L. Clavelier,
          \n“Fabrication of SiGe-on-insulator substrates by a condensation technique: An experimental and modelling study”
          \nSemiconductor Science and Technology 22 (3), art. No. 011, pp. 237-244, 30 January 2007.<\/p>\n

          P. Mistry, I. Gomez-Morilla, R.C. Smith, D. Thomson, G.W. Grime, R.P. Webb, R. Gwilliam, C. Jeynes, A. Cansell, M. Merchant and K.J. Kirkby,
          \n“Maskless proton beam writing in gallium arsenide”,
          \nNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 260, Issue 1, July 2007, pp. 437-441.<\/p>\n

          In-Ho Kang, Wook Bahng, Sang-Cheol Kim, Sung-Jae Joo, Nam-Kyun Kim,
          \n“Numerical investigation of the DC and RF performances for a 4H-SiC double delta-doped channel MESFET having various delta-doping concentrations”,
          \nMaterials Science Forum, Vol. 556-557, 2007, pp. 823-826.<\/p>\n

          B. Vincent, J.-F. Damlencourt, P. Rivallin, E. Nolot, C. Licitra, Y. Morand and L. Clavelier,
          \n“Fabrication of SiGe-on-insulator substrates by a condensation technique: An experimental and modelling study”
          \nSemiconductor Science and Technology 22 (3), art. No. 011, pp. 237-244, 30 January 2007.<\/p>\n

          Jung-Hui Tsai, I-Hsuan Hsu, Tzu-Yen Weng and Chien-Ming Li,
          \n“Simulated analysis for InGaP\/GaAs heterostructure-emitter bipolar transistor with InGaAs\/GaAs superlattice-base structure”,
          \nMicroelectronics Journal, Vol. 38, Issues 6-7, June-July 2007, pp. 750-753.<\/p>\n

          W. A. Gibson,
          \n“Comparison of Gallium Nitride High Electron Mobility Transistors Modeling in Two and Three Dimensions”,
          \nNaval Postgraduate School, Monterey, CA., Dec 2007, pp. 77.<\/p>\n

          Sneha Kabra, Harsupreet Kaur, Subhasis Haldar, Mridula Gupta and R.S. Gupta,
          \n“Two-dimensional subthreshold analysis of sub-micron GaN MESFET”,
          \nMicroelectronics Journal, Vol. 38, Issues 4-5, April-May 2007, pp. 547-555.<\/p>\n

          Sona P. Kumar, Anju Agrawal, Rishu Chaujar, Sneha Kabra, Mridula Gupta and R.S. Gupta,
          \n“Threshold voltage model for small geometry AlGaN\/GaN HEMTs based on analytical solution of 3-D Poisson’s equation”,
          \nMicroelectronics Journal, Vol. 38, Issues 10-11, October-November 2007, pp. 1013-1020.<\/p>\n

          Jos\u00e9 Mar\u00eda Tirado, Jos\u00e9 Luis S\u00e1nchez-Rojas, and Jos\u00e9 Ignacio Izpura
          \n“Trapping Effects in the Transient Response of AlGaN\/GaN HEMT Devices”,<\/p>\n

          Jung Gil Yang, Sunkyu Choi, Yongsik Jeong, Kyounghoon Yang,
          \n“Theoretical and experimental study of the InP\/InGaAs PIN diode for millimeter-wave MMIC applications”,
          \n2007 International Conference on Indium Phosphide and Related Materials, 2007, pp. 133-136.<\/p>\n

          Francesco G. Della Corte, Fortunato Pezzimenti and Roberta Nipoti,
          \n“Simulation and experimental results on the forward J\u2013V characteristic of Al implanted 4H\u2013SiC p\u2013i\u2013n diodes”,
          \nMicroelectronics Journal, Vol. 38, Issue 12, December 2007, pp. 1273-1279.<\/p>\n

          M. De Laurentis, F. M. De Paola, V. d’Alessandro, A. Irace, and G. Breglio,
          \n“InP\/InGaAsP electrically controlled Bragg modulator for over 40-Gbit\/s modulation speed”
          \nJul. 6, 2006 Proceedings of SPIE – The International Society for Optical Engineering 6350, art. No. 63500E.<\/p>\n

          Shadi A. Dayeh, David P. R. Aplin, Xiaotian Zhou, Paul K. L. Yu, Prof., Edward T. Yu, Prof., Deli Wang, Prof.,
          \n“High Electron Mobility InAs Nanowire Field-Effect Transistors”
          \nSmall Vol. 3, Issue 2, pp. 326 – 332 Published 5 Dec 2006<\/p>\n

          I. Chakarov and M. Temkin,
          \n“Modeling of Ion Implanatation in SiC Crystals”,
          \nNucllear Intstruments Methods Physics Research B, Beam Interactactions Materials Atoms, Vol. 242, No.1\/2, Jan. 2006, pp. 690-692.<\/p>\n

          S. S. Mane, S. Hameeda, A. R. Sahaa and C. K. Maiti,
          \n“Modeling of low temperature SiGe oxidation”
          \nMaterials Science in Semiconductor Processing Vol. 9, Issues 4-5, August-October 2006, pp. 668-672.<\/p>\n

          F. Cappelluti, F. Bonani, M. Furno, G. Ghione, R. Carta, L. Bellemo, C. Bocchiola, L. Merlin,
          \n“Physics-based mixed-mode reverse recovery modeling and optimization of Si PiN and MPS fast recovery diodes”
          \nMicroelectronics Journal, Vol. 37, Issue 3, March 2006, pp. 190-196.<\/p>\n

          T. Munir, A. A. Aziz, M. J. Abdullah,
          \n“Epilayer Thickness and Doping Density Variation Effects on Current-Voltage (I-V) Characteristics of n-GaN Schottky Diode”,
          \nIEEE International Conference on Semiconductor Electronics, 2006. ICSE
          \n’06. Oct. 29 2006 – Dec. 1 2006, pp. 892 – 895.<\/p>\n

          M. Philip, A. O’Neill,
          \n“Calibration of 4H-SiC TCAD Models and Material Parameters”
          \n2006 Conference on Optoelectronic and Microelectronic Materials and
          \nDevices, 6-8 Dec. 2006, pp. 137 – 140.<\/p>\n

          A. R. Saha, C. K. Maiti,
          \n“Technology CAD for germanium CMOS circuit”
          \n18 September 2006 Materials Science and Engineering B: Solid-State Materials for Advanced Technology 135 (3), pp. 261-266.<\/p>\n

          T. Munir, A. Abdullah, M. J. Abdulaziz, N. M. Ahmed,
          \n“Concentration efects on n-GaN schottky diode current-voltage (i-v) characteristics”,
          \nMaterials Science Forum. Vol. 517, pp. 159-164. 2006.<\/p>\n

          L. O. San Vicente, J. M. Lopez-Gonzalez, A. Garcia-Loureiro,
          \n“Numerical simulation of new InP\/GaAsSb-DHBTs using ATLAS”,
          \nSpanish Conference on Electron Devices, 2005 2-4 Feb. 2005, pp. 187 – 189.<\/p>\n

          L.-H. Chong, K. Mallik, C. H. De Groot,
          \n“The vertical metal insulator semiconductor tunnel transistor: A proposed Fowler-Nordheim tunneling device”
          \nMicroelectronic Engineering, Vol. 81, Issue 2-4, August 2005, pp. 171-180.<\/p>\n

          M. Balucani, V. N. Dobrovolsky, A. V. Osipov, A. Ferrari,
          \n“Model of the drain current saturation in long-gate JFETs and MESFETs”
          \nSolid-State Electronics, Vol. 49, Issue 8, August 2005, pp. 1251-1254.<\/p>\n

          J. Urresti, S. Hidalgo, D. Flores, J. Roig, J. Rebollo, I. Mazarredo,
          \n“A quasi-analytical breakdown voltage model in four-layer punch-through TVS devices”
          \nSolid-State Electronics, Vol. 49, Issue 8, August 2005, pp. 1309-1313.<\/p>\n

          R. Ragi, M. A. Romero, B. Nabet,
          \n“Modeling the electrical characteristics of schottky contacts in low-dimensional heterostructure devices”
          \nIEEE Transactions on Electron Devices, Vol. 52, Issue 2, February 2005, pp. 170-175.<\/p>\n

          P. Bhatnagar, A. B. Horsfall, N. G. Wright, et al.,
          \n“Effective edge termination design in SiCVJFET”
          \nMaterials Science Forum, Vol. 483, 2005, pp. 877-880.<\/p>\n

          J. Steszewski and A. Jakubowski,
          \n“Modeling I-V characteristics of 4H-SiC and 6H-SiC MOSFETs”
          \nElektronika, Vol. 46, No. 2-3, 2005, pp. 25-6 (Language: in Polish).<\/p>\n

          M. B. A. Jalil, Y. Jiang, G. K. L. Goh,
          \n“Modeling of a ferromagnetic two-dimensional electron gas device”
          \nIEEE Transactions on Magnetics, Vol. 41, Issue 3, March 2005, pp. 1118-1125.<\/p>\n

          S. -Y. Cheng, C. Y. Chen, J. Y. Chen, W. C. Liu, W.-L. Chang, M. -H. Chiang,
          \n“Comprehensive studies of InGaP\/GaAs heterojunction bipolar transistors with different thickness of setback layers”
          \nSuperlattices and Microstructures, Vol. 37, Issue 3, March 2005, pp. 171-183.<\/p>\n

          S. Montanari, A. Forster, M. I. Lepsa, H. Lath,
          \n“High frequency investigation of graded gap injectors for GaAs Gunn diodes”
          \nSolid-State Electronics, Vol. 49, Issue 2, February 2005, pp. 245-250.<\/p>\n

          S. K. Mandal, S. Das, C. K. Maiti,
          \n“Source engineering in short channel double gate vertical SiGe-MOSFETs”
          \nMaterials Science in Semiconductor Processing, Vol. 8, Issue 1-3, pp. 353–357, SPEC. ISS., February 2005.<\/p>\n

          Y. C. Choi, H.- Y. Cha, L. F. Eastman, M. G. Spencer,
          \n“A new 4H-SiC normally off lateral channel vertical JFET with extremely low power losses: Source inserted double-gate structure with a supplementary highly doped region”
          \nIEEE Transactions on Electron Devices, Vol. 52, Issue 9, September 2005, pp. 1940-1948.<\/p>\n

          R. Sampathkumaran, K. P. Roenker,
          \n“Effects of self-heating on the microwave performance of SiGe HBTs”
          \nSolid-State Electronics, Vol. 49, Issue 8, August 2005, pp. 1292-1296.<\/p>\n

          S. K. Aggarwal, R. Gupta, S. Haldar, M. Gupta, R. S. Gupta,
          \n“A physics based analytical model for buried p-layer non-self aligned SiC MESFET for the saturation region”
          \nSolid-State Electronics, Vol. 49, Issue 7, July 2005, pp. 1206-1212.<\/p>\n

          L. Bednarz, Rashmi and I. Huynen,
          \n“Optimising intrinsic performance of InAlAs\/InGaAs Y-branch junction for nonlinear RF operation”
          \nElectronics Letters, Vol. 41, Issue 5, 3 March 2005, pp. 282-283.<\/p>\n

          S. Michael,
          \n“A novel approach for the modeling of advanced photovoltaic devices using the SILVACO\/ATLAS virtual wafer fabrication tools”
          \nSolar Energy Materials and Solar Cells, Vol. 87, Issues 1-4, May 2005, pp. 771-784.<\/p>\n

          S. -Y. Cheng, C. DY. Chen, F. U. Ssu-I, P. -H. Lai, Y. -Y. Tsai, W. -C. Liu,
          \n“DC characterization of InP\/InGaAs tunneling emitter bipolar transistor”
          \nJapanese Journal of Applied Physics, 2005, Vol. 44, pp. 824-827.<\/p>\n

          S. Michael and A. Bates,
          \n“The design and optimization of advanced multijunction solar cells using the Silvaco ATLAS software package”
          \nSolar Energy Materials and Solar Cells, Vol. 87, Issues 1-4, May 2005, pp. 785-794.<\/p>\n

          L. Bednarz, Rashmi, B. Hackens, G. Farhi, V. Bayot, I. Huynen,
          \n“Nonlinear electron transport properties of InAlAs\/InGaAs based Y-branch junctions for microwave rectification at room temperature”
          \nSolid State Communications, Vol. 134, Issue 3, April 2005, pp. 217-222.<\/p>\n

          N. Tanuma, S. Yokokura, T. Matsui, M. Tacano,
          \n“Capacitance analysis of Al0.25Ga0.75N\/GaN heterostructure barrier varactor diodes”
          \nPhysica Status Solidi C: Conferences, Vol. 2, Issue 7, 2005, pp. 2692-2695.<\/p>\n

          C. Piemonte, M. Boscardin, G. F. Dalla Betta, S. Ronchin, N. Zorzi,
          \n“Development of 3D detectors featuring columnar electrodes of the same doping type”
          \nNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2005, Vol. Issues 1-2, 541, pp. 441-448.<\/p>\n

          A. Bates and S. Michael,
          \n“The design and optimization of an advanced four junction solar cell”
          \nA Collection of the 22nd AIAA International Communications Satellite Systems Conference and Exhibit, 2005, Vol. 87, pp. 785-794.<\/p>\n

          A. L. Crespin and S. Michael,
          \n“Modeling the effects of electron radiation in solar cells”
          \nA Collection of the 22nd AIAA International Communications Satellite Systems Conference and Exhibit, 2005, pp. 782-785.<\/p>\n

          T. Naeve, M. Hohenbild, P. Seegebrecht,
          \n“A quasi-2-dimensional photodiode model for high-speed short-wavelength applications”
          \nThe 12th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications, 2004, pp. 66-70.<\/p>\n

          S. H. Olsen, A. G. O’Neill, S. Chattopadhyay, L. S. Driscoll, K. S. K. Kwa, D. J. Norris, A. G. Cullis, D. J. Paul,
          \n“Study of single- and dual-channel designs for high-performance strained-Si-SiGe n-MOSFETs”
          \nIEEE Transactions on Electron Devices, Vol. 51, Issue 8, August 2004, pp. 1245-1253.<\/p>\n

          B. Lee, H. Yoon, K. S. Hyun, Y. H. Kwon, I. Yun,
          \n“Investigation of manufacturing variations of planar InP\/InGaAs avalanche photodiodes for optical receivers”
          \nMicroelectronics Journal, Vol. 35, Issue 8, August 2004, pp. 635-640.<\/p>\n

          S. -Y. Cheng, C. -Y. Chen, J. -Y. Chen, H. -M. Chuang, C. -H. Yen, W. -C. Liu,
          \n“Comprehensive study of InGaP-Alx<\/sub>Ga1-x<\/sub>As-GaAs composite-emitter heterojunction bipolar transistors with different thickness of Alx<\/sub>Ga1-x<\/sub>As graded layers”
          \nJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 2004, Vol. 22, Issue 4, pp. 1699-1704.<\/p>\n

          S. H. Olsen, A. G. O’Neill, L. S. Driscoll, S. Chattopadhyay, K. S. K. Kwa, A. M. Waite, Y. T. Tang, A. G. R. Evans, J. Zhang,
          \n“Optimization of alloy composition for high-performance strained-Si-SiGe N-channel MOSFETs”
          \nIEEE Transactions on Electron Devices, Vol. 51, Issue 7, July 2004, pp. 1156-1163.<\/p>\n

          W. -B. Chen, Y. -K. Su, C. -L. Lin, H. -C. Wang, H.-C. Yu, S. -M. Chen, J. -Y. Su,
          \n“Simulation and fabrication of InGaP\/Al0.98<\/sub>Ga0.02<\/sub>As\/ GaAs oxide-confined collector-up heterojunction bipolar transistors”
          \nJapanese Journal of Applied Physics, 2004, Vol. 43, Issue 8A, pp. 5174.<\/p>\n

          S. -Y. Cheng,
          \n“Analysis of improved dc and ac performances of an InGaP\/GaAs heterojunction bipolar transistor with a graded Alx<\/sub>Ga1-x<\/sub>As layer at emitter\/base heterojunction”
          \nSolid-State Electronics, Vol. 48, Issue 7, July 2004, pp. 1087-1094.<\/p>\n

          V. Palankovski and S. Selberherr,
          \n“Rigorous modeling of high-speed semiconductor devices”
          \nMicroelectronics Reliability, Vol. 44, Issue 6, June 2004, pp. 889-897.<\/p>\n

          A. Rennane, L. Bary, J. L. Roux, J. Kuchenbecker, J. Graffeuil and R. Plana,
          \n“Reliability properties of SiGe HBTs”,
          \nApplied Surface Science, Vol. 224, Issues 1-4, Mar. 2004, pp. 341-346.<\/p>\n

          V. Palankovski and S. Selberherr,
          \n“The state-of-the-art in simulation for optimization of SiGe-HBTs”,
          \nApplied Surface Science, Vol. 224, Mar. 2004, pp. 312-319.<\/p>\n

          T. Kudoh and T. Asano,
          \n“Si\/SiGe heterojunction collector for low loss operation of Trench IGBT”
          \nApplied Surface Science, Vol. 224, Mar. 2004, pp. 399-404.<\/p>\n

          S. Srivastava and K. P. Roenker,
          \n“Numerical modeling study of the InP\/InGaAs uni-travelling carrier photodiode”
          \nSolid-State Electronics, Vol. 48, Issue 3, Mar. 2004, pp. 461-470.<\/p>\n

          Y. J. Song, S. H. Kim, S. H. Lee, H. C. Bae, J. Y. Kang, K. H. Shim, J. -H. Kim, and J. I. Song,
          \n“DC and RF characteristics of RPCVD grown modulation doped Si0.8<\/sub>Ge0.2<\/sub>\u00a0pMOSFETs”
          \nSolid-State Electronics, Vol. 48, Feb. 2004, pp. 315-320.<\/p>\n

          K. L. Tsakmakidis, L. Gomez-Rojas, I. D. Robertson, O. Hess, P. A. Houston, B. Weiss,
          \n“FDTD modelling of velocity mismatch in travelling-wave heterojunction phototransistor”
          \nElectronics Letters, Vol. 40, Issue 7, April 2004, pp. 452-454.<\/p>\n

          M. J. Kumar, D. V. Rao,
          \n“Proposal and design of a new SiC-emitter lateral NPM Schottky collector bipolar transistor on SOI for VLSI applications”
          \nIEE Proceedings: Circuits, Devices and Systems, Vol. 151, Issue 1, February 2004, pp. 63-67.<\/p>\n

          K. N. M. Kharuddin, B. Y. Majlis,
          \n“Electrical Characteristics of Al0.22<\/sub>Ga0.78<\/sub>As\/In0.22<\/sub>Ga0.78<\/sub>As PHEMT with Gate Length in Nano Regime”
          \nIEEE International Conference on Semiconductor Electronics, 2004. ICSE 2004. 7-9 Dec. 2004 pp. 5.<\/p>\n

          Cheng, T., Greer, J. C.,
          \n“Side gating in silicon germanium hetero-dimensional field effect transistors”
          \nMicroelectronic Engineering, Vol. 71, Issue 2, February 2004, pp. 197-208.<\/p>\n

          S. W. Tan, M. K. Hsu, A. H. Lin, M. Y. Chu, W. T. Chen, W. S. Lour,
          \n“Sub-0.25 micron gate-like heterojunction doped-channel FETs with a controllable notch-angle V-gate”
          \nSemiconductor Science and Technology, Vol. 19, Issue 3, March 2004, pp. 384-388.<\/p>\n

          P. Rosales-Quintero, A. Torres-Jacome, R. Murphy-Arteaga, M. Landa-V\u00e1zquez,
          \n“Electrical characterization of n-type a-SiGe:H\/p-type crystalline-silicon heterojunctions”
          \nSemiconductor Science and Technology, Vol. 19, Issue 3, March 2004, pp. 366-372.<\/p>\n

          K. L. Tsakmakidis, L. Gomez-Rojas, I. D. Robertson, O. Hess, P. A. Houston, B. Weiss,
          \n“FDTD modelling of an InP traveling-wave HPT”
          \nProceedings of SPIE – The International Society for Optical Engineering, Vol. 5451, 2004, pp. 4.<\/p>\n

          P. J. Niu, H. W. Liu ,W. L. Guo, X. Y. Li,
          \n“Characteristics analysis of AlGaAs\/GaAs resonant tunneling diode by device simulation”
          \nMicronanoelectronic Technology, Vol. 41, No. 10, 2004, pp. 15-28 (in Chinese)<\/p>\n

          F. M. De Paola, V. D’Alessandro, A. Irace, J. H. Den Besten, M. K. Smit,
          \n“Numerical simulations for the analysis of the dynamical behaviour of an ultra-fast InP\/InGaAsP optoelectronic modulator”
          \nProceedings of SPIE – The International Society for Optical Engineering, Vol. 5451, 2004, pp. 5.<\/p>\n

          G. H. Song, H. W. Kim, W. Bahng, S. C. Kim, N. K. Kim,
          \n“4H-SiC P-N Diode Using Internal Ring(IR) Termination Technique”
          \nMaterials Science Forum, Vol. 457-460, Issue II, 2004, pp. 1041-1044.<\/p>\n

          S. K. Mandal, G. K. Marskole, K. S. Chari, C. K. Maiti,
          \n“Transit time components of a SiGe-HBT at low temperature”
          \nProceedings of the International Conference on Microelectronics, Vol. 24, 2004, pp. 315-318.<\/p>\n

          H. W. Kim, W. Bahng, G. H. Song, S. C. Kim, N. K. Kim, E. D. Kim,
          \n“Edge termination technique for SiC power devices”
          \nMaterials Science Forum, Vol. 457-460, Issue II, 2004, pp. 1241-1244.<\/p>\n

          S. -Y. Cheng, C. -Y. Chen, J. -Y. Chen, H. -M. Chuang, W. -C. Liu, W. -L. Chang, H. -J. Pan, P. -C. Chen,
          \n“Comprehensive analysis of InGaP\/GaAs Heterojunction Bipolar Transistors (HBTs) with different thickness of setback layers”
          \nProceedings of SPIE – The International Society for Optical Engineering, Vol. 5276, 2004, pp. 3.<\/p>\n

          M. S. A. Karunaratne, J. M. Bonar, J. Zhang, A. F. W. Willoughby,
          \n“Effect of carbon on diffusion of boron in SiGe between 940-1050”
          \nMaterials Research Society Symposium Proceedings, Vol. 809, 2004, pp. 213-218.<\/p>\n

          J. Urresti, S. Hidalgo, D. Flores, J. Roig, M. Vellvehi, J. Rebollo,
          \n“Modellization of the breakdown voltage of four-layer punch-through TVS diodes”
          \nProceedings of the International Conference on Microelectronics, Vol. 24 I, 2004, pp. 159-162.<\/p>\n

          K. Poochinda, T. C. Chen, T. G. Stoebe and N. L. Ricker,
          \n“Simulation of GaN and InGaN p-i-n and n-i-n photo-devices”
          \nJournal of Crystal Growth, Vol. 261, Jan. 2004, pp. 336-340.<\/p>\n

          Mauro Encisco, Frederick Aniel, Laurent Gigerre, Thomas Hackbarth, Hans Herzog, Ulf K,
          \n“Self-heating effects on strained Si\/SiGe n-HFETs”
          \nProceedings of 2003 International Semiconductor Device Research Symposium, Washington DC, December 1, pp. 162-163.<\/p>\n

          Lei Ai and Ming-C. Cheng,
          \n“Optimization of the Cutoff Frequency for Si1-x<\/sub>Gex<\/sub>\u00a0HBTs”
          \nProceedings of 2003 International Semiconductor Device Research Symposium, Washington DC, December 1, pp. 172-173.<\/p>\n

          P. A. Balaraman and K. P. Roenker,
          \n“Simulation Study of InP\/GaAsSb Double Heterojunction Bipolar Transistors”
          \nProceedings of 2003 International Semiconductor Device Research Symposium, Washington DC, December 1.<\/p>\n

          R. Magno, J. B. Boos, P. M. Campbell, B.R. Bennet, E. R. Glasser, M. G. Ancona, B. P. Tinkham, D. Park, N. A. Papanicolaou, K. Ikossi, and B. V. Shanabrook,
          \n“InAIAsSb\/InGaSb Double Heterojunction Bipolar Transistor”
          \nProceedings of 2003 International Semiconductor Device Research Symposium, Washington DC, December 1.<\/p>\n

          F. G. Della Corte, F. Pezzimenti,
          \n“Design Considerations for a-Si:H\/SiGe\/Si Heterojunction Bipolar Transistors”
          \nIEEE Transactions on Electron Devices Publication Date: Oct. 2003, Vol. 50, Issue 10, pp. 2180- 2182.<\/p>\n

          F. G. Della Corte, F. Pezzimenti,
          \n“Design of a-Si:H\/GaAs heterojunction bipolar transistors with improved DC and AC characteristics”
          \nCircuits, Devices and Systems, IEE Proceedings Publication Date: Aug. 2003, pp. 350- 360.<\/p>\n

          F. Aniel, M. Enciso-Aguilar, L. Giguerre, P. Crozat, R. Adde, T. Mack, U. Seiler, Th. Hackbarth, H. J. Herzog, U. K\u00f6nig and B. Raynor,
          \n“High performance 100 nm T-gate strained Si\/Si0.6<\/sub>Ge0.4<\/sub>\u00a0n-MODFET”
          \nSolid-State Electronics, Vol. 47, Issue 2, Feb. 2003, pp. 283-289.<\/p>\n

          S. Mil’shteina, P. Erslandb, S. Somisettya, C. Gil,
          \n“p-HEMT with tailored field”
          \nMicroelectronics Journal, Vol. 34, Issue 5-8, May 2003, pp. 359-361.<\/p>\n

          S. Sedlmaier et al.,
          \n“Vertical Tunnel FET Grown by Silicon MBE”
          \nICSI3 SiGe Conference, Santa Fe, New Mexico, March 2003.<\/p>\n

          T. Vamsi Krishna, J. R. Jessing, D. D. Russell, J. Scaggs, L. R. Warner and J. A. Hartman,
          \n“Modeling and design of polythiophene gate electrode ChemFETs for environmental pollutant sensing”
          \nProceedings of the 15th Biennial University\/Government\/Industry Microelectronics Symposium 2003, 30.<\/p>\n

          R. Magno, J. B. Boos, P. M. Campbell, B. R. Bennett, E. R. Glaser, M. G. Ancona, B. P. Tinkham, D. Park, N. A. Papanicolaou, K. Ikossi, B. V. Shanabrook, S. E. Mohney,
          \n“InAlAsSb\/InGaSb double heterojunction bipolar transistor”
          \n2003 International Semiconductor Device Research Symposium (IEEE Cat. No.03EX741), 2003, pp. 202.<\/p>\n

          Shiou-Ying Cheng,
          \n“An InGaP\/AlGaAs\/GaAs heterojunction bipolar transistor with zero conduction-band discontinuity”
          \nSuperlattices and Microstructures, Vol. 33, Jan – Feb 2003, pp. 1 – 7.<\/p>\n

          M. J. Kumar and C. L. Reddy,
          \n“A new dual-bandgap SiC-on-Si P-emitter, SiGe N-base, lateral Schottky Metal-collector (PNM) HBT on SOI with reduced collector-emitter offset voltage”
          \nIEEE Region 10 Annual International Conference, Proceedings\/TENCON, Vol. 1, 2003, pp. 493-495.<\/p>\n

          C. A. Barrios, C. I. Thomas, M. Spencer, M. Lipson,
          \n“3C-SiC modulator for high-speed integrated photonics”
          \nMaterials Research Society Symposium – Proceedings, Vol. 799, 2003, pp. 223-227.<\/p>\n

          K. P. Roenker, R. Flenniken, P. B. Kosel, P. B.,
          \n“A fabrication laboratory course based on GaAs MESFETs”
          \nBiennial University\/Government\/Industry Microelectronics Symposium – Proceedings, 2003, pp. 391.<\/p>\n

          F. Pezzimenti and F. G. Della Corte,
          \n“Design and simulation of an a-Si:H\/GaAs HBT with improved DC and high frequency characteristics”
          \nProceedings of SPIE – The International Society for Optical Engineering, Vol. 5117, 2003, pp. 5.<\/p>\n

          D. J. Paul, A. Ahmed, A. C. Churchill, D. J. Robbins and W. Y. Leong,
          \n“Low-dimensional inverted Si\/SiGe modulation-doped electron gases using selective ex-situ ion implantation”
          \nMaterials Science and Engineering B, Vol. 89, Issues 1-3, 14 February 2002, pp. 111-115.<\/p>\n

          C. Cerrina, A. Nejim, Y. Wang and P. L. F. Hemment,
          \n“Carrier transport properties of ion beam synthesised Si1-x<\/sub>Gex<\/sub>\u00a0alloy heavily doped with arsenic”
          \nNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 188, Issues 1-4, April 2002, pp. 170-173.<\/p>\n

          P. Michalopoulos and S. Michael,
          \n“A new technique for the development of state-of-the-art photovoltaic devices using silvaco software”
          \nRecent Advances in Circuits, Systems and Signal Processing, 2002, pp. 50-54.<\/p>\n

          S. Michael and P. Michalopoulos,
          \n“Application of the SILVACO\/ATLAS software package in modeling and optimization of state-of-the-art photovoltaic devices”
          \nMidwest Symposium on Circuits and Systems, Vol. 2, 2002.<\/p>\n

          S. -K. Lee, C. -M. Zetterling, M. \u00d6stling,
          \n“Reduction of the barrier height and enhancement of tunneling current of titanium contacts using embedded Au nano-particles on 4H and 6H silicon carbide”
          \nMaterials Science Forum, Vol. 389-393, Issue 2, 2002, pp. 937-940.<\/p>\n

          B. Gustafson, D. Csontos, M. Suhara, L. -E. Wernerssona, W. Seifert, H. Xu and L. Samuelson,
          \n“Coupling between lateral modes in a vertical resonant tunneling structure”
          \nPhysica E: Low-dimensional Systems and Nanostructures, Vol. 13, Issues 2-4, Mar. 2002, pp. 950-953.<\/p>\n

          A. Hattab, V. Aubry-Fortuna, F. Meyer, V. Yam, V. L. Thanh, D. Bouchier and C. Clerc,
          \n“Schottky-barrier height inhomogeneities controlled by buried Ge\/Si quantum dots”
          \nMicroelectronic Engineering, Vol. 64, Issues 1-4, October 2002, pp. 435-441.<\/p>\n

          Q. T. Zhao, P. Kluth, S. Winnerl, S. Lenk, S. Mantl,
          \n“Self-assembly patterning of epitaxial CoSi2 nano-structures”
          \nMicroelectronic Engineering, Vol. 64, Issue 1, October 2002, pp. 443-447.<\/p>\n

          C. H. Yi, Robert A. Metzger and April S. Brown,
          \n“The effect of strained Al0.7<\/sub>In0.3<\/sub>As emitter layers on abrupt N-p+<\/sup>\u00a0AlInAs-GaInAs heterojunction diodes and heterojunction bipolar transistors”
          \nJournal of Electronic Materials, Vol. 31, No. 8, 2002, pp. 841-847.<\/p>\n

          S. Lee, N. J. Song, J. Burm, C. An,
          \n“4H-SiC MESFET large-signal modeling using modified Materka model”
          \nMaterials Science Forum, Vol. 389-393, No. 2, 2002, pp. 1399-1402.<\/p>\n

          B. Gunnar Malm, et al.,
          \n“Ge-profile design for improved linearity of SiGe Double HBTs”
          \nIEEE Electron Device Letters, Vol. 23, Issue 1, Jan. 2002, pp. 19 – 21.<\/p>\n

          Giovanna Sozzi and Roberto Menozzi,
          \n“High-electric-field effects and degradation of AlGaAs\/GaAs power HFETs: a numerical study”
          \nMicroelectronics Reliability, Vol. 42, Issue 1, January 2002, pp. 53-59.<\/p>\n

          M. Tarplee, V. Madangarli and T. S. Sudarshan,
          \n“Comparison of Figures-of-Merit of N and P SiC Schottky Diodes with Ni Schottky Contacts at High Temperatures”
          \nJpn. J. Appl. Phys., Vol. 41, Issue 12, December 2002, pp. 7322-7326.<\/p>\n

          A. Breed, K. P. Roenker and D. Todorova,
          \n“Numerical modeling of parasitic barrier formation at the SiGe\/Si heterojunction due to p-n junction displacement”
          \nSolid-State Electronics, Voulme 46, Issue 12, Dec. 2002, pp. 2199-2208.<\/p>\n

          D. Todorova, N. Mathur, K. P. Roenker,
          \n“Simulation and design of SiGe HBTs for power amplification at 10 GHz”
          \nSolid-State Electronics, Vol. 46, Issue 10, October 2002, pp. 1485-1493.<\/p>\n

          B. G. Malm and M. \u00d6tling,
          \n“Mixed mode circuit and device simulation of RF harmonic distortion for high-speed SiGe HBTs”
          \nSolid- State Electronics, Vol. 46, Issue 10, Oct. 2002, pp. 1567-1571.<\/p>\n

          Bongyong Lee and Ilgu Yun,
          \n“Effect of different etching processes on edge breakdown suppression for planar InP\/InGaAs avalanche photodiodes”
          \nMicroelectronics Journal, Vol. 33, Issue 8, Aug. 2002, pp. 645-649.<\/p>\n

          Holmes, KL,
          \n“Two-Dimensional Modeling of Aluminum Gallium Nitride\/Gallium Nitride High Electron Mobility Transistor”
          \nNaval Postgraduate School, Monterey, CA. Jun 2002. 79p. NTIS ADA404952.<\/p>\n

          F. G. Della Corte and F. Pezzimenti,
          \n“Design of an a-Si:H(n)\/GaAs(p)\/GaAs(n) high-gain heterojunction bipolar transistor with 10 GHz cut-off frequency”
          \nJournal of Non-Crystalline Solids, Vol. 299-302, Part 2, April 2002, pp. 1365-1369.<\/p>\n

          J. S. Hamel, et al.,
          \n“Technological requirements for a lateral SiGe HBT technology including theoretical performance predictions relative to vertical SiGe HBTs”
          \nIEEE Trans. Electron Devices, vol.49, No.3, Mar. 2002, pp. 449 – 456.<\/p>\n

          A. Cordat, S. Lardenois, V. Le Thanh and A. Koster,
          \n“SiGe\/Si multiquantum well structure for light modulation”
          \nMaterials Science and Engineering B, Vol. 89, Issues 1-3, 14 February 2002, pp. 66-69.<\/p>\n

          Yasushi ITOH and Kazuhiko HONJO,
          \n“Fundamental Perspective of Future High Power Devices and Amplifiers for Wireless Communications Systems”
          \nIEICE Trans. Electron., Vol E86-C, No. 2, February 2002, pp. 108-119.<\/p>\n

          Yee-Chia Yeo, et al.,
          \n“Design and fabrication of 50-nm thin-body p-MOSFETs with a SiGe heterostructure channel”
          \nIEEE Trans. Electron Devices, Vol. 49, Issue 2, Feb. 2002, pp. 279-286.<\/p>\n

          Jochen Eberhardt and Erich Kasper,
          \n“Modelling of SiGe heterobipolar transistors: 200 GHz frequencies with symmetrical delay times”
          \nSolid-State Electronics, Vol. 45, Issue 12, December 2001, pp. 2097-2100.<\/p>\n

          S. KARMALKAR and Umesh Mishra,
          \n“Very high voltage AlGaN \/ GaN HEMTs using a field-plate deposited on a stepped insulator”
          \nSolid-State Electron., Vol. 45, pp. 1645-1652, September 2001.<\/p>\n

          D. Dieci, G. Sozzi, R. Menozzi, E. Tediosi, C. Lanzieri, and C. Canali,
          \n“Electric-field-related reliability of algaas\/gaas power hfets: Bias dependence and correlation with breakdown”
          \nIEEE Transactions On Electron Devices, Vol. 48, Issue 9, September 2001, pp.1929-1937.<\/p>\n

          V. Tuyeri, Zhirun Hu, and A. Rezazadeh,
          \n“Temperature dependence of barrier height in GaAs planar doped barrier diodes”
          \nProceeding of the IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications, 2001, pp. 143-147.<\/p>\n

          C. K. Tam, K. L. Koon, Z. R. Hu, A. Rezazadeh,
          \n“Self-heating effects of GaN FETs for high power microwave applications”
          \nWorkshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, 2001, pp. 119-123.<\/p>\n

          S. KARMALKAR, J. Deng, M. S. Shur and R. Gaska,
          \n“RESURF AlGaN \/ GaN HEMT for very high voltage power switching”
          \nIEEE Electron Device Lett., Vol. 22, Issue 8, August 2001, pp. 373-375.<\/p>\n

          S. KARMALKAR and Umesh Mishra,
          \n“Enhancement of Breakdown Voltage in AlGaN \/ GaN High Electron Mobility Transistors Using A Field Plate”
          \nIEEE Trans. Electron Devices, Vol. 48, Issue 8, August 2001, pp.1515-1521.<\/p>\n

          Y. Tan, J. J. Liou, Joerg Gessner and F. Schwierz,
          \n“Analysis of reliability of AlGaAs\/GaAs HBTs based on device simulation”
          \nSolid-State Electronics, Vol. 45, Issue 5, May 2001, pp. 727-734.<\/p>\n

          G. Torrese, I. Huynen and A. Vander Vorst,
          \n“Design criteria for increasing the bandwidth – Efficiency product of GaAs\u00a0p-i-n<\/i>\u00a0photodetectors”
          \nMicrowave and Optical Technology Letters, Vol. 29, May 2001, pp. 150-155.<\/p>\n

          C. Maneux, N. Labat, N. Malbert, A. Touboul, Y. Danto, J. -M. Dumas, M. Riet and J. L. Benchimol,
          \n“Experimental procedure for the evaluation of GaAs-based HBT’s reliability”
          \nMicroelectronics Journal, Vol. 32, Issue 4, 1 April 2001, pp. 357-371.<\/p>\n

          J. Ludwig, J. Andersson, D. Bryman, J. Cresswell, M. Constable, R. Irsigler, R. Goeppert, M. Hornung, S. Passmore, M. Rogalla, K. Runge, C. Schwarz,
          \n“Development of GaAs-CCDs for X-ray detection”
          \nNuclear Instruments and Methods in Physics Research A, Vol. 460, Issue 1, March 2001, pp. 72-75.<\/p>\n

          Eimers KP,
          \n“2-D Modeling of GaN HEMTS Incorporating the Piezoelectric Effect”
          \nNaval Postgraduate School, Monterey, CA. Mar 2001. 72 pp. NTIS ADA389892.<\/p>\n

          Deepak, P. A. Blakey, K. Johnson,
          \n“TCAD simulation of ion implantation test for controlling quality of GaAs substrates used for fabricating implanted devices”
          \nJournal of Electronic Materials, Vol. 30, Issue 2, February 2001, pp. 70-77.<\/p>\n

          W. Barth, T. Debski, N. Abedinov, Tz. Ivanov, H. Heerlein, B. Volland, T. Gotszalk, I. W. Rangelow, K. Torkar, K. Fritzenwallner et al.,
          \n“Evaluation and fabrication of AFM array for ESA-Midas\/Rosetta space mission”
          \nMicroelectronic Engineering, Vol. 57-58, September 2001, pp. 825-831.<\/p>\n

          T. H. Prettyman, F. P. Ameduri, A. Burger, J. C. Gregory, M. A. Hoffbauer, P. R. Majerus, D. B. Reisenfeld, S. A. Soldner, C. Szeles,
          \n“Effect of surfaces on the performance of CdZnTe detectors”
          \nProceedings of SPIE – The International Society for Optical Engineering, Vol. 4507, 2001, pp. 2.<\/p>\n

          J. C. Jackson, A. P. Morrison, P. Hurley, W. R. Harrell, D. Damjanovic, B. Lane, A. Mathewson,
          \n“Process monitoring and defect characterization of single photon avalanche diodes”
          \nIEEE International Conference on Microelectronic Test Structures, 2001, pp. 165-170.<\/p>\n

          Katsuhisa Tada, Koichi Nitatori, Takashi Iwamoto, takamitsu Miura, Masahisa Sakai,
          \n“VCSEL arrays for optical wireless systems”
          \nProceedings of SPIE Vol. 4286 (2001) pp. 203-209.<\/p>\n

          Luo, Yuhao,
          \n“Silicon germanium virtual substrate growth and silicon (1-y)germanium(y)\/silicon(1-x)germanium(x)\/silicon(1-y)germanium HBTs for millimeter-wave applications”
          \nPhD Univ Of California, LA, 2001, 170 pp. AAT 3032835.<\/p>\n

          M. Roschke and F. Schwierz,
          \n“Electron mobility models for 4H, 6H, and 3C SiC [MESFETs]”
          \nIEEE Transactions on Electron Devices, Vol. 48, Issue 7, 2001, pp. 1442-1447.<\/p>\n

          D. A. Boardman and P. J. Sellin,
          \n“Design and characterisation of high electron mobility transistors for use in a monolithic GaAs X-ray imaging sensor”
          \nNuclear Instruments and Methods in Physics Research Section A, Vol. 466, Issue 1, June 2001, pp. 226-231.<\/p>\n

          Bengt Gunnar Malm et al.,
          \n“Implanted collector profile optimisation in a SiGe HBT process”
          \nSolid-State Electronics, Vol. 45, Issue 3, March 2001, pp. 399-404.<\/p>\n

          Gunnar Malm B. Ostling M.,
          \n“Influence of Ge-profile Designs and Saturation Effects on SiGe HBT Linearity”
          \nProc. ESSDERC 2001, pp. 451-454.<\/p>\n

          Eui-Seung Kim, Changhoon Oh, Seogoo Lee, Bongyong Lee, and Ilgu Yun,
          \n“Modeling and optimization of process parameters for GaAs\/AlGaAs multiple quantum well avalanche photodiodes using genetic algorithms”
          \nMicroelectronics Journal, Vol. 32, 2001, pp. 563-567.<\/p>\n

          P. H. Nguyen, S. Scheinert, S. Berleb, W. Br\u00fctting, and G. Paasch,
          \n“The influence of deep traps on transient current-voltage characteristics of organic light-emitting diodes”
          \nOrganic Electronics, Vol. 2, Issues 3-4, December 2001, pp. 105-120.<\/p>\n

          B. Gunnar Malm, T. Johansson, T. Arnborg, H. Norstr\u00f6m, J. V. Grahn, and M. \u00d6stling,
          \n“Implanted collector profile optimization in a SiGe HBT process”
          \nSolid-State Electronics, Vol. 45, Issue 3, March 2001, pp. 399-404.<\/p>\n

          W. R. McKinnon, R. Driad, C. Storey, A. Renaud, S. P. McAlister, T. Garanzotis, A. J. Springthorpe,
          \n“Emitter interface in InP-based HBTs with InAlAs\/InP composite emitters”
          \nIEICE Transactions on Electronics Vol. E84-C, Issue 10, October 2001, pp. 1373-1378.<\/p>\n

          S. Maikap, B. Senapati, C. K. Maiti,
          \n“Technology CAD of SiGe-heterojunction field effect transistors”
          \nDefence Science Journal, Vol. 51, Issue 2, April 2001, pp. 195-199.<\/p>\n

          S. Verghese, K. A. McIntosh, R. J. Molnar, L. J. Mahoney, R. L. Aggarwal, M. W. Geis, K. M. Molvar, E. K. Duerr, I. Melngailis,
          \n“GaN avalanche photodiodes operating in linear-gain mode and Geiger mode”
          \nIEEE Transactions on Electron Devices, Vol. 48, Issue 3, March 2001, pp. 502-511.<\/p>\n

          M. Nawaz, J. M. Miranda, P. Sakalas, S. M. Wang, Q. X. Zhao, M. Willander, H. Zirath,
          \n“Design, processing and characterization of delta-doped channel AlGaAs\/InGaAs\/GaAs HFETs”
          \nSemiconductor Science and Technology, Vol. 15, Issue 7, July 2000, pp. 728-735.<\/p>\n

          X. A. Cao, G. T. Dang, A. P. Zhang, F. Ren, C. R. Abernathy, S. J. Pearton, J. M. Van Hove, J. J. Klaassen, C. J. Polley, A. M Wowchack, P. P. Chow, D. J. King, S. N. Chu,
          \n“Common-base operation of GaN bipolar junction transistors”
          \nElectrochemical and Solid-State Letters, Vol. 3, Issue 7, July 2000, pp. 333-334.<\/p>\n

          M. Borgarino, J. G. Tartarin, J. Kuchenbecker, T. Parra, H. Lafontaine, T. Kovacic, R. Plana, J. Graffeuil,
          \n“On the effects of hot carriers on the RF characteristics of Si\/SiGe heterojunction bipolar transistors”
          \nIEEE Microwave and Guided Wave Letters, Vol. 10, Issue 11, November 2000, pp. 466-468.<\/p>\n

          P. Mushini and K. P. Roenker,
          \n“Simulation study of high injection effects and parasitic barrier formation in SiGe HBTs operating at high current densities”
          \nSolid-State Electronics, Vol. 44, Issue 12, 1 December 2000, pp. 2239-2246<\/p>\n

          Francesco G. Della Corte,
          \n“Simulation study of the DC and AC characteristics of an a-Si:H(n)\/GaAs(p)\/GaAs(n) heterojunction bipolar transistor”
          \nSolid-State Electronics, Vol. 44, Issue 12, 1 December 2000, pp. 2265-2271.<\/p>\n

          A. Vonsovici, G. T. Reed, A. G. R. Evans,
          \n“\u03b2-SiC-on insulator waveguide structures for modulators and sensor systems”
          \nMaterials Science in Semiconductor Processing, Vol. 3, Issues 5-6, October 2000, pp. 367-374.<\/p>\n

          J. Kuchenbecker, M. Borgarino, A. Coustou, R. Plana, J. Graffeuil and F. Fantini,
          \n“Evaluation of the hot carrier\/ionizing radiation induced effects on the RF characteristics of low-complexity SiGe heterojunction bipolar transistors by numerical simulation”
          \nMicroelectronics Reliability, Vol. 40, Issues 8-10, August-October 2000, pp. 1579-1584.<\/p>\n

          B. Gunnar Malm, Jan V. Grahn and Mikael \u00d6stling,
          \n“Influence of transient enhanced diffusion of the intrinsic base dopant profile on SiGe HBT DC and HF characteristics”
          \nSolid-State Electronics, Vol. 44, Issue 10, 1 October 2000, pp. 1747-1752.<\/p>\n

          N. E. Isam, E. Schamiloglu, J. S. H. Schoenberg and et al.,
          \n“Compensation mechanisms and the response of high resistivity GaAs photoconductive switches during high-power applications”
          \nIEEE Trans. Plasma Science, Vol. 28, Issue 5, Oct. 2000, pp. 1512-1519.<\/p>\n

          C. Monier, P. C. Chang, N. Y. Li, J. R. LaRoche, A. G. Baca, H. Q. Hou, F. Ren, S. J. Pearton,
          \n“Simulation and design of InGaAsN-based heterojunction bipolar transistors for complementary low-power applications”
          \nSolid-State Electronics, Vol. 44, Issue 9, September 2000, pp. 1515-1521.<\/p>\n

          Goepfert, I.D.,
          \n“Experimental and theoretical study of acceptor activation and transport properties in p-type Alx<\/sub>Ga1-x<\/sub>N\/GaN superlattices”
          \nJournal of Applied Physics, 08\/15\/2000, Vol. 88 Issue 4, pp. 2030-2038.<\/p>\n

          X. A. Cao, J. M. Van Hove, J. J. Klaassen, C. J. Polley, A. M. Wowchak, P. P. Chow, D. J. King, A. P. Zhang, G. Dang, C. Monier et al.,
          \n“Simulation of GaN\/AlGaN heterojunction bipolar transistors: part I – npn structures”
          \nSolid-State Electronics, Vol. 44, Issue 7, 1 July 2000, pp. 1255-1259.<\/p>\n

          S. Datta, K. P. Roenker and M. M. Cahay,
          \n“A Gummel\u2014Poon model for pnp heterojunction bipolar transistors with a compositionally graded base”
          \nSolid-State Electronics, Vol. 44, Issue 6, 1 June 2000, pp. 991-1000.<\/p>\n

          M. Murtagh, J. T. Beechinor, N. Cordero, P. V. Kelly, G. M. Crean, I. L. Farrell, G. M. O’Connor and S. W. Bland,
          \n“InGaP\/GaAs heterojunction bipolar transistor optical and electronic band structure characterization”
          \nThin Solid Films, Vol. 364, Issues 1-2, 27 March 2000, pp. 58-63.<\/p>\n

          E. Huang and M. R. Wilson,
          \n“Utilization of design of experiments combined with technical knowledge to increase manufacturability of a HIGFET device”
          \n2000 GaAs MANTECH Conference. Digest of Papers. 2000 International Conference on Gallium-Arsenide MA.<\/p>\n

          N. E. Islam and E. Schamiloglu,
          \n“Charge transport and persistent conduction in high gain photoconductive semiconductor switches used in pulsed power applications”
          \nThe 27th IEEE International Conference on Plasma Science, 2000. ICOPS 2000, pp. 265.<\/p>\n

          Sunghoon Kim, Kyunghae Kim, Junsin Yi, Hoongjoo Lee, and Byungryul Ryum,
          \n“Optimum Ge profile for the high cut-off frequency of SiGe HBT”
          \nProceeding of the 2nd International Conference on Microwave and Millimeter Wave Technology, 2000, pp. 84-87.<\/p>\n

          F. G. Della Corte, T. Polichetti, A. Rubino, and G. Cocorullo,
          \n“Study of a-Si:H emitters for efficient carrier injection in GaAs bipolar devices”
          \nJournal of Non-Crystalline Solids 266-269, May 2000, pp. 1049-1053.<\/p>\n

          Hamel J.S. Tang Y.T.,
          \n“Numerical Simulation and Comparizon of Vertical and Lateral SiGe HBT\u00b4s for RF\/Microwave Applications”
          \nProc. ESSDERC 2000, pp. 620-623.<\/p>\n

          C. Monier, S. J. Pearton, A. G. Baca, P. C. Chang, L. Zhang, J. Han, R. J. Shul, F. Ren, J. LaRoche,
          \n“Current gain simulation of Npn AlGaN\/GaN heterojunction bipolar transistors”
          \nMaterials Research Society Symposium – Proceedings Vol. 622, 2000.<\/p>\n

          Jae Kyoung Mun, Jong Won Lim, Jae Jin Lee and Jeon Wook Yang,
          \n“Degradation of d.c. parameters in enhancement mode WNx<\/sub>\u00a0self-aligned gate GaAs MESFETs under high temperature stress”
          \nMicroelectronics Reliability, Vol. 39, Issue 12, 17 December 1999, pp. 1793-1800.<\/p>\n

          L. S. Riley, S. Hall, J. M. Bonar,
          \n“The separation of generation lifetimes of Si and SiGe using capacitance-transient measurements on MOS capacitors formed by plasma anodisation of Si:Si0.9<\/sub>Ge0.1<\/sub>:Si substrates”
          \nSolid-State Electronics, Vol. 43, Issue 12, 1 December 1999, pp. 247-2250.<\/p>\n

          M. Murtagh, J. T. Beechinor, N. Cordero, P. V. Kelly, G. M. Crean and S. W. Bland,
          \n“InGaP\/GaAs based heterojunction bipolar transistor characterisation using non-contact optical spectroscopy”
          \nMaterials Science and Engineering B, Vol. 66, Issues 1-3, 1 December 1999, pp. 185-188.<\/p>\n

          S.K. Jones, S.P. Marsh and W.A. Phillips,
          \n“TCAD Evaluation of AlGaN\/GaN Device Performance For High Power Applications”
          \nPresented at IEEE Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications, 1999, pp. 65-70.<\/p>\n

          M. Tarplee, V. Madangarli, Q. Zhang, P. R. Palmer and T. S. Sudarshan,
          \n“Computer simulation of P-type SiC Schottky diode using ATLAS”
          \nICSCRM 99 Proceedings, International Conference on Silicon Carbide and Related Materials.<\/p>\n

          S. D. Lee, J. G. Heo, S. H. Yang, and J. K. Rhee,
          \n“Simulation and fabrication of AlGaAs\/InGaAs\/GaAs power PHEMT for MMIC\u00b4s applications at 35 GHz”
          \nTENCON 99, Proceedings of the IEEE Region 10 Conference, Vol. 2, 1999, pp. 1117-1120.<\/p>\n

          G. E. Bunea, S. T. Dunham, T. D. Moustakas,
          \n“Modeling of a GaN based static induction transistor”
          \nMRS Internet Journal of Nitride Semiconductor Research, Vol. 4, Issue SUPPL. 1, 1999.<\/p>\n

          Islam, N.E. and Schoenberg, J.S.H.,
          \n“Analysis of high voltage operation of gallium arsenide photoconductive switches used in high power applications”
          \nJournal of Applied Physics, 08\/01\/99, Vol. 86 Issue 3, pp. 1754-1758.<\/p>\n

          N. G. Wright, C. M. Johnson, A. G. O’Neill,
          \n“Cell geometry optimisation of 4H-SiC power UMOSFETs by electrothermal simulation”
          \nSolid-State Electronics, Vol. 43, Issue 3, March 1999, pp. 515-520.<\/p>\n

          Gabriela E. Bunea, S.T. Dunham and T.D. Moustahas,
          \n“Modeling of GaN Based Static Induction Transistor,”
          \nMRS Internet J. Nitride Semicond. Res., 451, G6, A1, 1999.<\/p>\n

          A. Rusani, J. Kuchenbecker, M. Norgarino, R. Plana, J. Graffeuil, and M. Vanzi,
          \n“Investigation of the burn-in effect in microwave GaInP\/GaAs HBTs by means of numerical simulations”
          \nProceeding of the IEEE Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications, 1999, pp. 260-265.<\/p>\n

          Guofu Niu, et al.,
          \n“Intermodulation Characteristics of UHV\/CVD SiGe HBT”
          \nProc. IEEE BCTM 1999, pp. 50-53.<\/p>\n

          F. G. Della Corte, A. Rubino and G. Cocorullo,
          \n“Simulation study and realisation of an a-Si : H emitter on GaAs”
          \nSolid State Electronics, Vol. 42, Issue 10, Oct. 1998, pp. 1819-1825.<\/p>\n

          C.W. Hatfield, G.L. Bilbro, S.T. Allen, and J.W. Palmour,
          \n“DC I-V characteristics and RF performance of a 4H-SIC JFET at 773 K”
          \nIEEE Transactions On Electron Devices, Vol. 45, Issue 9, September 1998, pp. 2072-2074.<\/p>\n

          N. E. Islam, E. Schamiloglu, C. B. Fleddermann, R. P. Joshi and L. Zheng,
          \n“Simulation studies of lateral and opposed contact GaAs photoconductive switch geometry for high power UWB microwave applications”
          \nProceedings of the 1998 IEEE International Conference on Plasma Science, Jun 1-4 1998, Raleigh, NC, pp. 296.<\/p>\n

          M. Y. A. Yousif, O. Nur, O. Chretien, Y. Fu and M. Willander,
          \n“Threshold voltage and charge control considerations in double quantum wellSi\/Si1-x<\/sub>Gex<\/sub>\u00a0p-type MOSFETs”
          \nSolid-State Electronics, Vol. 42, Issue 6, June 1998, pp. 951-956.<\/p>\n

          Lars-Erik Wernersson, Andrej Litwin, Lars Samuelson and Hongqi Xu,
          \n“Performance and design of vertical, ballistic, heterostructure field-effect transistors”
          \nMaterials Science and Engineering B, Vol. 51, Issues 1-3, 27 February 1998, pp. 76-80.<\/p>\n

          T. Holden, W. D. Sun, F. H. Pollak, J. L. Freeouf, D. McInturff, and J. M. Woodall,
          \n“Reflection anisotropy spectroscopy study of the near-surface electric fields in undoped,\u00a0n<\/i>– and\u00a0p<\/i>-doped low-temperature grown GaAs (001)”
          \nPhys. Rev. B, Vol. 58, Issue 12, 7795-7798 (1998).<\/p>\n

          V. Kaper, F. Gao, and P. Ersland,
          \n“2-D device numerical simulations of gate sinking failure mechanism in pHEMT”
          \nProceeding of the IEEE GaAs Reliability Workshop, 1998, pp. 63-68.<\/p>\n

          F. G. Della Corte et al.,
          \n“Simulation Study and Realisation of an a-Si:H Emitter on GaAs”
          \nSolid State Electronics, Vol. 42, Issue 10, October 1998, pp. 1819-1825.<\/p>\n

          Kazuaki Kunihiro et al.,
          \n“Improvement of Off-State Breakdown Voltage in Power GaAs MESFETs Based on an Accurate Simulation Scheme”
          \nProc. IEDM Tech Dig, 1998, pp. 71-74.<\/p>\n

          P. A. Clifton, and A. G. O’Neill*,
          \n“Blaze Simulation of SiGe:Si Heterostructure p-MOSFETs”
          \n*Department of Electrical and Electronic Engineering, University of Newcastle, UK.<\/p>\n

          A. T. Hunter and J. N. Schulman,
          \n“Modeling of finite size effects in resonant tunneling diodes”
          \nPhysica E: Low-dimensional Systems and Nanostructures, Vol. 2, Issues 1-4, 15 July 1998, pp. 507.<\/p>\n

          Dejan Krizaj, Walter Bonvicini and Slavko Amon,
          \n“FOXFET structure \u2013 device modelling and analysis”
          \nNuclear Instruments and Methods in Physics Research Section A, Vol. 384, January 1997, pp. 482-490.<\/p>\n

          U. K\u00f6nig, M. Gl\u00fcck, A. Gruhle, G. H\u00f6ck, E. Kohn, B. Bozon, D. Nuernbergk, T. Ostermann and R. Hagelauer,
          \n“Design rules for n-type SiGe hetero FETs”
          \nSolid-State Electronics, Vol. 41, Issue 10, October 1997, pp. 1541-1547<\/p>\n

          Radice RA,
          \n“Single-Event Analysis of LT GaAs Mesfet Integrated Circuits”
          \nNaval Postgraduate School, Monterey, CA. Sep 1997. 55p. NTIS ADA3367786.<\/p>\n

          Gluck M., Behammer D., Schafer M., Walk H., Konig U.,
          \n“2D Process and Device Simulation of Lateral and Vertical Si\/SiGe High-Speed Devices”
          \nSimulation of Semiconductor Processes and Devices, 1997. SISPAD pp. 197-200.<\/p>\n

          C. K. Maiti and G. A. Armstrong,
          \n“Simulation of Silicon Germanium HBTs Using ATLAS\/BLAZE”
          \nDepartment of Electrical & Electronic Engineering, Ashby Building, The Queen’s University of Belfast<\/p>\n

          D. H. Mao, H. G. Robinson, D. U. Bartholomew and et al.,
          \n“Device modeling of HgCdTe vertically integrated photodiodes”
          \nJ. Electron. Mater., Vol. 26, Jun. 1997, pp. 678-682.<\/p>\n

          H. M. Menkara, R. N. Bicknell-Tassius, R. Benz, II and C. J. Summers,
          \n“MBE growth and characterization of doped multiple quantum well avalanche photodiodes”
          \nJournal of Crystal Growth, Vol. 175-176, Part 2, May 1997, pp. 983-989.<\/p>\n

          T. Ashley, A. B. Dean, C. T. Elliot, R. Jefferies, F. Khaleque and T. J. Philllips,
          \n“High-Speed, Low-Power InSb Transistors”
          \nProc. IEDM, 1997, pp. 751-754.<\/p>\n

          R. Job, A. V. Denisenko, A. M. Zaitsev, W. R. Fahrner, A. A. Melnikov and M. Werner,
          \n“High sensitivity thermal sensors on insulating diamond”
          \nThin Solid Films, Vol.s 290-291, 15 December 1996, pp. 165-170.<\/p>\n

          H. M. Menkara, B. K. Wagner and C. J. Summers,
          \n“Effect of variations in the doping profiles on the properties of doped multiple quantum well avalanche photodiodes”
          \nOptical Materials, Vol. 6, Issues 1-2, July 1996, pp. 103-109.<\/p>\n

          C. D. Wilson, A. G. O’Neill, S. M. Baier and J. C. Nohava,
          \n“High temperature performance and operation of HFETs”
          \nIEEE Transactions on Electron Devices, Vol. 43, Issue 2, 1996, pp. 201-206.<\/p>\n

          Andrew J Panks, Christopher M Snowden and Michael J Howes,
          \n“Process Oriented MESFET Models for Transistor Design using ATLAS and ATHENA\/FLASH”
          \nMicrowave and Terahertz Technology Group Department of Electronic and Electrical Engineering
          \nThe University of Leeds, Leeds, LS2 9JT, UK.<\/p>\n

          L. Risch et al.,
          \n“Fabrication and electrical characterization of Si\/SiGe P-channel MOSFETs with a delta doped boron layer”
          \nESSDERC’96, pp. 465-468.<\/p>\n

          C. D. Wilson, A. G. O\u00b4Neill,
          \n“High Temperature Operation of GaAs Based FET\u00b4s”
          \nSolid State Electronics Vol 38, Issue 2, pp 339-343, 1995.<\/p>\n

          S. P. VOINIGESCU, P.B. RABKIN, C.A.T. SALAMA, and P.A. BLAKEY,
          \n“2D numerical investigation of the impact of compositional grading on the performance of submicrometer Si-SiGe mosfets”
          \nIEEE Transactions On Electron Devices, June 1995, Vol. 42, Issue 6, pp. 1039-1046.<\/p>\n

          Wel-Chou Hsu, Chang-Luen Wu, Ming-Shang Tsai, Chun-Yen, Wen-Chau Liu, Hir-Ming Shieh,
          \n“Characterization of High Performance Inverted Delta-Modulation-Doped (IDMD) GaAs\/InGaAs Pseudomorphic Heterostructure FET\u2019s”
          \nIEEE Trans on Electron Devices Vol. 42, Issue 5, May 1995, pp. 804-809.<\/p>\n

          Craig Wilson (Silvaco International) and Anthony O’Neill (University of Newcastle upon Tyne, England),
          \nThe Simulation of Wide Band Gap Semiconductor Materials for Use in High Temperature and Other Applications<\/p>\n

          C. Wilson, A. O’Neill,
          \n“GaN based heterostructure field effect transistors for temperature resistant device operation”
          \nProc ESSDERC 95, The Hague, Netherlands, pp. 161-164.<\/p>\n

          C. Wilson, A. O\u00b4Neill, S. Baker, J. Nohava,
          \n“A Complimentary III-V heterostructure Field Effect Transistor Technology for High Temperature Integrated Circuits”
          \nMaterials Science & Engineering B29, 1995 54-57.<\/p>\n

          S. P. Voinigescu, C. A. T. Salama, J-P. Noel and T. I. Kamins,
          \n“Optimized Ge channel profiles for VLSI compatibe Si\/SiGe p-MOSFETs”
          \nProc. IEDM Tech. Dig., 1994, pp. 369-372.<\/p>\n

          Y. Apanovich et al.,
          \n“2D Simulation of heterojunction devices including energy balance and lattice heating”
          \nProc. ESSDERC’94, pp. 463-466.<\/p>\n

          Clifford M. Krowne and Peter A. Blakey,
          \n“Submillimeter wave low-temperature admittance of n-GaAs and n-InP diode structures”
          \nJournal of Applied Physics, August 15, 1993, Vol. 74, Issue 4, pp. 2633-2637.<\/p>\n

          Voinigescu, Rabkin, Salama, Blakey,
          \n“2D Numerical Investigation of Gate Structure, Band Alignment and Delta-Doping Effects on the Transconductance & Cutoff Frequency of Submicron SVSIGe FET\u2019s”
          \nESSDERC, 1993.<\/p>\n

          Rabkin, Cottle, Blakey, Shur,
          \n“2D Simulation of DC, AC, and Breakdown Characteristics of Bipolar and Unipolar Silicon Carbide Devices”
          \nISDRS, 1993.<\/p>\n

          Y. Apanovich, E. Lyumkis, B. Polsky, A. Shur, and P. Blakey,
          \n“A comparison of energy balance and simplified hydrodynamic models for gaas device simulation”
          \nCOMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering 1993, Vol. 12, Issue: 4, pp. 221 – 230.<\/p>\n<\/div><\/section><\/div>

          <\/div>