{"id":31664,"date":"1998-02-05T16:39:46","date_gmt":"1998-02-05T16:39:46","guid":{"rendered":"https:\/\/silvaco.com\/%eb%b6%84%eb%a5%98%eb%90%98%ec%a7%80-%ec%95%8a%ec%9d%8c\/3d-simulation-of-power-devices-using-giga3d-and-mixedmode3d\/"},"modified":"2021-07-16T22:36:57","modified_gmt":"2021-07-17T05:36:57","slug":"3d-simulation-of-power-devices-using-giga3d-and-mixedmode3d","status":"publish","type":"post","link":"https:\/\/silvaco.com\/ko\/simulation-standard-ko\/3d-simulation-of-power-devices-using-giga3d-and-mixedmode3d\/","title":{"rendered":"3D Simulation of Power Devices Using Giga3D and MixedMode3D"},"content":{"rendered":"
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3D Simulation of Power Devices Using Giga3D and MixedMode3D<\/h1>\n

Recent additions to the\u00a0ATLAS<\/b>\u00a0device simulation framework have added the ability to simulate 3D electrothermal effects in\u00a0Giga3D<\/b>\u00a0and mixed circuit simulation with 3D device simulation in\u00a0MixedMode3D<\/b>. The new modules add to the existing 3D device simulation within\u00a0ATLAS<\/b>\u00a0as shown in Figure 1. They show the migration of existing 2D device simulation models and techniques to a full 3D approach.\u00a0ATLAS<\/b>\u00a0currently supports 3D simulation of most common device technologies:<\/p>\n

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Device3D<\/b>\u00a0– MOS, Bipolar, EEPROMs<\/p>\n

Blaze3D\u00a0<\/b>– MESFETs, HEMTs, HBTs<\/p>\n

Giga3D\u00a0<\/b>– power devices, SOI, ESD effects<\/p>\n

MixedMode3D\u00a0<\/b>– power devices embedded in circuitry , ESD effects, latchup<\/p>\n

TFT3D\u00a0<\/b>– thin film transistors<\/p>\n

Thermal3D\u00a0<\/b>-thermal effects in packaging<\/p>\n

Quantum3D\u00a0<\/b>– quantum moments solver<\/p>\n<\/blockquote>\n

The new modules\u00a0Giga3D<\/b>\u00a0and\u00a0MixedMode3D<\/b>\u00a0can be used with both\u00a0Device3D<\/b>\u00a0and\u00a0Blaze3D<\/b>\u00a0to model silicon and non-silicon technologies respectively.<\/p>\n

2D Versus 3D Simulation<\/p>\n

For many devices 2D\u00a0ATLAS<\/b>\u00a0simulation has been sufficient to describe the device behavior to the limit of simulation accuracy. Using 3D simulations will always be at least an order of magnitude slower than 2D and have more limitations on the accuracy of the initial structure definition.<\/p>\n

However in many technologies the device physics requires a 3D approach to simulation. Examples include substrate contacts in SOI, current crowding in power device structures, width effects in FETs. In addition for\u00a0Giga3D<\/b>, current filimentation is essentially a cylindrically symmetric event for which full 3D electrothermal device simulation is required.<\/p>\n<\/div><\/section><\/div>

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