{"id":31596,"date":"1998-10-02T16:20:12","date_gmt":"1998-10-02T16:20:12","guid":{"rendered":"https:\/\/silvaco.com\/%eb%b6%84%eb%a5%98%eb%90%98%ec%a7%80-%ec%95%8a%ec%9d%8c\/philips-model-9\/"},"modified":"2021-07-16T22:34:44","modified_gmt":"2021-07-17T05:34:44","slug":"philips-model-9","status":"publish","type":"post","link":"https:\/\/silvaco.com\/ko\/simulation-standard-ko\/philips-model-9\/","title":{"rendered":"PHILIPS Model 9"},"content":{"rendered":"
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PHILIPS Model 9<\/h1>\n

New MM9 Extraction routine in UTMOST III<\/p>\n

(part 1)<\/p>\n

Introduction<\/p>\n

In collaboration with STMicroelectronics Central R&D at Crolles (France), a new routine has been developed in\u00a0UTMOST III<\/b>\u00a0to provide a complete solution for MOS Philips Model 9 parameter extraction. This methodology[1] is based on the local optimization method; we can determine a limited set of 18 parameters (so called miniset) to describe the electrical behavior of each device, considering it as the reference device. This miniset includes all the electrical parameters for an individual device[1]. Specific local optimization strategies are described in this article to obtain good minisets. From these minisets, we can extract scaling parameters, using simple linear regressions. We will obtain a new complete set of parameters (so called maxisets). All temperature dependant parameters can also be extracted.<\/p>\n<\/div><\/section><\/div>

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