{"id":31464,"date":"2000-05-03T16:02:51","date_gmt":"2000-05-03T16:02:51","guid":{"rendered":"https:\/\/silvaco.com\/%eb%b6%84%eb%a5%98%eb%90%98%ec%a7%80-%ec%95%8a%ec%9d%8c\/using-luminous-to-model-the-transient-response-of-a-silicon-charge-collection-and-transfer-structure\/"},"modified":"2026-10-15T14:37:17","modified_gmt":"2026-10-15T21:37:17","slug":"using-luminous-to-model-the-transient-response-of-a-silicon-charge-collection-and-transfer-structure","status":"publish","type":"post","link":"https:\/\/silvaco.com\/ko\/simulation-standard-ko\/using-luminous-to-model-the-transient-response-of-a-silicon-charge-collection-and-transfer-structure\/","title":{"rendered":"Using Luminous to Model the Transient Response of a Silicon Charge Collection and Transfer Structure"},"content":{"rendered":"

Using\u00a0Luminous<\/i>\u00a0to Model the Transient Response of a Silicon Charge Collection and Transfer Structure<\/h1>\n
Introduction<\/div>\n

The rapid evolution of modern photonic devices in digital photographic and detection systems creates a need for physically-based simulation of charge collection and transfer. In this article we show the linearity, spatial sensitivity, and spectral response of a generalized silicon pixel structure using the\u00a0Luminous<\/b><\/i>\u00a0module of the\u00a0ATLAS<\/b><\/i>\u00a0device simulator. The\u00a0Luminous<\/b><\/i>\u00a0module is used to simulate net charge generation due to incident light energy, and the\u00a0S-Pisces<\/b><\/i>\u00a0module is used to simulate charge transport and generation-recombination mechanisms using the standard drift-diffusion transport equations coupled with Shockley-Read-Hall, Auger, and optical generation-recombination models.<\/p>\n

Pixel Structure<\/p>\n

The charge collection structure modeled here is typical of imaging applications, where charge is formed by electron-hole pair generation due to light incident on the silicon substrate. The charge is kept confined laterally by a transfer channel stop, shown in Figure 1 as a thick field oxide outside the active charge transfer region, and a lower concentration of phosphorus under the gate region. Generally, the charge transfer in pixel and charge-coupled devices is due to diffusion, drift due to the electric field, and fringing electric field effects. Free charge-transfer is used to simulate these mechanisms by modeling only the free electrons in the conduction band.<\/p>\n

\"\"<\/p>\n

Download Simulation Standard<\/a><\/p>\n","protected":false},"excerpt":{"rendered":"

The rapid evolution of modern photonic devices in digital photographic and detection systems creates a need for physically-based simulation of charge collection and transfer. In this article we show the linearity, spatial sensitivity, and spectral response of a generalized silicon pixel structure using the\u00a0Luminous\u00a0module of the\u00a0ATLAS\u00a0device simulator.<\/p>\n","protected":false},"author":12,"featured_media":22158,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"inline_featured_image":false,"footnotes":""},"categories":[7486],"tags":[],"class_list":["post-31464","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-simulation-standard-ko","entry","has-media"],"yoast_head":"\nUsing Luminous to Model the Transient Response of a Silicon Charge Collection and Transfer Structure - Silvaco<\/title>\n<meta name=\"description\" content=\"The rapid evolution of modern photonic devices in digital photographic and detection systems creates a need for physically-based simulation of charge collection and transfer\" \/>\n<meta name=\"robots\" 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