{"id":31034,"date":"2006-08-01T00:04:29","date_gmt":"2006-08-01T00:04:29","guid":{"rendered":"https:\/\/silvaco.com\/%eb%b6%84%eb%a5%98%eb%90%98%ec%a7%80-%ec%95%8a%ec%9d%8c\/three-dimensional-electro-thermodynamic-analysis-for-gan-light-emitting-diodes\/"},"modified":"2026-10-15T14:16:55","modified_gmt":"2026-10-15T21:16:55","slug":"three-dimensional-electro-thermodynamic-analysis-for-gan-light-emitting-diodes","status":"publish","type":"post","link":"https:\/\/silvaco.com\/ko\/simulation-standard-ko\/three-dimensional-electro-thermodynamic-analysis-for-gan-light-emitting-diodes\/","title":{"rendered":"Three Dimensional Electro-Thermodynamic Analysis for GaN Light Emitting Diodes"},"content":{"rendered":"

Three Dimensional Electro-Thermodynamic Analysis for GaN Light Emitting Diodes<\/h1>\n

Abstract<\/strong><\/h3>\n

Improvement in temperature characteristics of GaN LEDs is important for realizing reliable devices operating at high temperatures. In this article, the thermal characteristics of GaN LEDs have been analyzed by using the\u00a0ATLAS<\/em><\/strong>\u00a0three dimensional thermal conduction model and thermal heat model. Maximum operation temperature has also been calculated. It was shown that the distribution of lattice temperature using the conventional structure.<\/p>\n

Introduction<\/strong><\/p>\n

Nitride-based compound wide bandgap semiconductor materials such as GaN, InGaN and AlGaN or AlInGaN have been attract the greatest interest as materials for high performance light emitting devices in the blue to ultraviolet wavelength region light emitting diodes(LEDs), and laser diodes. These LEDs are used extensively as back lighting in liquid-crystal displays, traffic light lamps, and indoor or outdoor displays.<\/p>\n

Analysis of thermal characteristics for GaN LEDs have been carried out by using the three-dimensional thermal conduction model. In this article, three-dimensional analysis introduced the thermal conduction model and the self-heating effect as well.<\/p>\n

Simulation Model<\/strong><\/p>\n

The polarization of the wurtzite materials with built-in electrical fields in semiconductors is characterized with two components, spontaneous polarization, Psp, and piezoelectric polarization, Ppi.<\/p>\n

\"\"<\/p>\n

Download Simulation Standard<\/a><\/p>\n","protected":false},"excerpt":{"rendered":"

Abstract<\/p>\n

Improvement in temperature characteristics of GaN LEDs is important for realizing reliable devices operating at high temperatures. In this article, the thermal characteristics of GaN LEDs have been analyzed by using the\u00a0ATLAS\u00a0three dimensional thermal conduction model and thermal heat model. Maximum operation temperature has also been calculated. It was shown that the distribution of lattice temperature using the conventional structure.<\/p>\n","protected":false},"author":12,"featured_media":21639,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"inline_featured_image":false,"footnotes":""},"categories":[7486],"tags":[],"class_list":["post-31034","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-simulation-standard-ko","entry","has-media"],"yoast_head":"\nThree Dimensional Electro-Thermodynamic Analysis for GaN Light Emitting Diodes - Silvaco<\/title>\n<meta name=\"description\" content=\"Improvement in temperature characteristics of GaN LEDs is important for realizing reliable devices operating at high temperatures. 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In this article\" \/>\n<meta property=\"og:url\" content=\"https:\/\/silvaco.com\/ko\/simulation-standard-ko\/three-dimensional-electro-thermodynamic-analysis-for-gan-light-emitting-diodes\/\" \/>\n<meta property=\"og:site_name\" content=\"Silvaco\" \/>\n<meta property=\"article:publisher\" content=\"https:\/\/www.facebook.com\/SilvacoSoftware\/\" \/>\n<meta property=\"article:published_time\" content=\"2006-08-01T00:04:29+00:00\" \/>\n<meta property=\"article:modified_time\" content=\"2026-10-15T21:16:55+00:00\" \/>\n<meta property=\"og:image\" content=\"https:\/\/silvaco.com\/wp-content\/uploads\/simulationstandard\/simstd_aug_2006_a4.jpg\" \/>\n\t<meta property=\"og:image:width\" content=\"1344\" \/>\n\t<meta property=\"og:image:height\" content=\"1669\" \/>\n\t<meta property=\"og:image:type\" content=\"image\/jpeg\" \/>\n<meta name=\"author\" content=\"Casey Molver\" \/>\n<meta name=\"twitter:card\" content=\"summary_large_image\" \/>\n<meta name=\"twitter:creator\" content=\"@SilvacoSoftware\" \/>\n<meta name=\"twitter:site\" content=\"@SilvacoSoftware\" \/>\n<meta name=\"twitter:label1\" content=\"\uae00\uc4f4\uc774\" \/>\n\t<meta name=\"twitter:data1\" content=\"Casey Molver\" \/>\n\t<meta name=\"twitter:label2\" content=\"\uc608\uc0c1 \ub418\ub294 \ud310\ub3c5 \uc2dc\uac04\" \/>\n\t<meta name=\"twitter:data2\" content=\"1 minute\" \/>\n<script type=\"application\/ld+json\" class=\"yoast-schema-graph\">{\"@context\":\"https:\\\/\\\/schema.org\",\"@graph\":[{\"@type\":\"Article\",\"@id\":\"https:\\\/\\\/silvaco.com\\\/ko\\\/simulation-standard-ko\\\/three-dimensional-electro-thermodynamic-analysis-for-gan-light-emitting-diodes\\\/#article\",\"isPartOf\":{\"@id\":\"https:\\\/\\\/silvaco.com\\\/ko\\\/simulation-standard-ko\\\/three-dimensional-electro-thermodynamic-analysis-for-gan-light-emitting-diodes\\\/\"},\"author\":{\"name\":\"Casey Molver\",\"@id\":\"https:\\\/\\\/silvaco.com\\\/ja\\\/#\\\/schema\\\/person\\\/2763eb741ca5ac04477fdff50ed84c80\"},\"headline\":\"Three Dimensional Electro-Thermodynamic Analysis for GaN Light Emitting Diodes\",\"datePublished\":\"2006-08-01T00:04:29+00:00\",\"dateModified\":\"2026-10-15T21:16:55+00:00\",\"mainEntityOfPage\":{\"@id\":\"https:\\\/\\\/silvaco.com\\\/ko\\\/simulation-standard-ko\\\/three-dimensional-electro-thermodynamic-analysis-for-gan-light-emitting-diodes\\\/\"},\"wordCount\":206,\"image\":{\"@id\":\"https:\\\/\\\/silvaco.com\\\/ko\\\/simulation-standard-ko\\\/three-dimensional-electro-thermodynamic-analysis-for-gan-light-emitting-diodes\\\/#primaryimage\"},\"thumbnailUrl\":\"https:\\\/\\\/silvaco.com\\\/wp-content\\\/uploads\\\/simulationstandard\\\/simstd_aug_2006_a4.jpg\",\"articleSection\":[\"Simulation Standard\"],\"inLanguage\":\"ko-KR\"},{\"@type\":\"WebPage\",\"@id\":\"https:\\\/\\\/silvaco.com\\\/ko\\\/simulation-standard-ko\\\/three-dimensional-electro-thermodynamic-analysis-for-gan-light-emitting-diodes\\\/\",\"url\":\"https:\\\/\\\/silvaco.com\\\/ko\\\/simulation-standard-ko\\\/three-dimensional-electro-thermodynamic-analysis-for-gan-light-emitting-diodes\\\/\",\"name\":\"Three Dimensional Electro-Thermodynamic Analysis for GaN Light Emitting Diodes - Silvaco\",\"isPartOf\":{\"@id\":\"https:\\\/\\\/silvaco.com\\\/ja\\\/#website\"},\"primaryImageOfPage\":{\"@id\":\"https:\\\/\\\/silvaco.com\\\/ko\\\/simulation-standard-ko\\\/three-dimensional-electro-thermodynamic-analysis-for-gan-light-emitting-diodes\\\/#primaryimage\"},\"image\":{\"@id\":\"https:\\\/\\\/silvaco.com\\\/ko\\\/simulation-standard-ko\\\/three-dimensional-electro-thermodynamic-analysis-for-gan-light-emitting-diodes\\\/#primaryimage\"},\"thumbnailUrl\":\"https:\\\/\\\/silvaco.com\\\/wp-content\\\/uploads\\\/simulationstandard\\\/simstd_aug_2006_a4.jpg\",\"datePublished\":\"2006-08-01T00:04:29+00:00\",\"dateModified\":\"2026-10-15T21:16:55+00:00\",\"author\":{\"@id\":\"https:\\\/\\\/silvaco.com\\\/ja\\\/#\\\/schema\\\/person\\\/2763eb741ca5ac04477fdff50ed84c80\"},\"description\":\"Improvement in temperature characteristics of GaN LEDs is important for realizing reliable devices operating at high temperatures. 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