{"id":30995,"date":"2009-01-01T15:00:34","date_gmt":"2009-01-01T15:00:34","guid":{"rendered":"https:\/\/silvaco.com\/%eb%b6%84%eb%a5%98%eb%90%98%ec%a7%80-%ec%95%8a%ec%9d%8c\/3d-simulation-of-oxidation-induced-stress-using-cartesian-meshes-with-adaptive-refinement\/"},"modified":"2026-10-16T09:04:51","modified_gmt":"2026-10-16T16:04:51","slug":"3d-simulation-of-oxidation-induced-stress-using-cartesian-meshes-with-adaptive-refinement","status":"publish","type":"post","link":"https:\/\/silvaco.com\/ko\/simulation-standard-ko\/3d-simulation-of-oxidation-induced-stress-using-cartesian-meshes-with-adaptive-refinement\/","title":{"rendered":"3D Simulation of Oxidation Induced Stress Using Cartesian Meshes with Adaptive Refinement"},"content":{"rendered":"<h1><strong>3D Simulation of Oxidation Induced Stress Using Cartesian<br \/>\nMeshes with Adaptive Refinement<\/strong><\/h1>\n<p style=\"color: #000000; font-size: medium; font-style: normal; font-variant-ligatures: normal; font-variant-caps: normal; font-weight: 400; letter-spacing: normal; orphans: 2; text-align: start; text-indent: 0px; text-transform: none; white-space: normal; widows: 2; word-spacing: 0px; -webkit-text-stroke-width: 0px; text-decoration-style: initial; text-decoration-color: initial;\">The formation of isolation trenches is one of the key process steps used in power device fabrication. Also the intensive scaling of modern semiconductor devices requires significant stress engineering to enhance carrier mobilities and avoid extended defect formation. Simulation results from complex 3D trench and lateral isolation structures are presented together with the inbuilt oxidation induced mechanical stress in the grown oxides. Fast transition of compressive to tensile stresses has been obtained for concave-convex surfaces with internal hydrostatic pressures ranging from 0.04 to \u20130.04 N\/\u03bcm<sup>2<\/sup>\u00a0.<\/p>\n<p style=\"color: #000000; font-size: medium; font-style: normal; font-variant-ligatures: normal; font-variant-caps: normal; font-weight: 400; letter-spacing: normal; orphans: 2; text-align: start; text-indent: 0px; text-transform: none; white-space: normal; widows: 2; word-spacing: 0px; -webkit-text-stroke-width: 0px; text-decoration-style: initial; text-decoration-color: initial;\">A previous publication [1] introduced a new simulation framework (VICTORY PROCESS, Silvaco\u2019s 3D TCAD tool) based on using Cartesian meshes with adaptive refinement. Unlike unstructured tetrahedral meshes, this approach makes use of the level set method on fixed Cartesian meshes and does not involve re-meshing algorithms that represent a major obstacle in modelling 3D processes. VICTORY PROCESS also uses finite difference numerical schemes to solve the oxidation modelling equations. The implementation of general-type boundary conditions at arbitrary implicit interfaces and the approximation of the equations at the interface between fine and coarse Cartesian meshes are major milestones. Novel, in-house finite-difference schemes were developed and successfully implemented in a commercial simulation framework to overcome these issues. This paper demonstrates the capability and versatility of the Cartesian framework to simulate and analyze oxidation-induced stress.<\/p>\n<p><img loading=\"lazy\" width=\"782\" height=\"1012\" src=\"https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/simstd_Q1_2009_a4.jpg\" class=\"cleaned-enfold-image\" alt=\"\" decoding=\"async\" loading=\"lazy\" srcset=\"https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/simstd_Q1_2009_a4.jpg 782w, https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/simstd_Q1_2009_a4-232x300.jpg 232w, https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/simstd_Q1_2009_a4-768x994.jpg 768w, https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/simstd_Q1_2009_a4-545x705.jpg 545w, https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/simstd_Q1_2009_a4-29x37.jpg 29w, https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/simstd_Q1_2009_a4-43x55.jpg 43w, https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/simstd_Q1_2009_a4-37x48.jpg 37w\" sizes=\"auto, (max-width: 782px) 100vw, 782px\" \/><\/p>\n<p><a href=\"https:\/\/silvaco.com\/dynamicweb\/jsp\/downloads\/DownloadDocStepsAction.do?req=download&#038;nm=simstd_Q1_2009_a4.pdf\" class=\"BGT-btn\" target=\"_blank\" rel=\"noopener noreferrer\">Download Simulation Standard<\/a><\/p>\n","protected":false},"excerpt":{"rendered":"<p>The formation of isolation trenches is one of the key process steps used in power device fabrication. Also the intensive scaling of modern semiconductor devices requires significant stress engineering to enhance carrier mobilities and avoid extended defect formation. Simulation results from complex 3D trench and lateral isolation structures are presented together with the inbuilt oxidation induced mechanical stress in the grown oxides. Fast transition of compressive to tensile stresses has been obtained for concave-convex surfaces with internal hydrostatic pressures ranging from 0.04 to \u20130.04 N\/\u03bcm2 .<\/p>\n","protected":false},"author":12,"featured_media":19905,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"inline_featured_image":false,"footnotes":""},"categories":[7486],"tags":[],"class_list":["post-30995","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-simulation-standard-ko","entry","has-media"],"yoast_head":"<!-- This site is optimized with the Yoast SEO Premium plugin v28.7 (Yoast SEO v28.7) - https:\/\/yoast.com\/product\/yoast-seo-premium-wordpress\/ -->\n<title>3D Simulation of Oxidation Induced Stress Using Cartesian Meshes with Adaptive Refinement - Silvaco<\/title>\n<meta name=\"description\" content=\"The formation of isolation trenches is one of the key process steps used in power device fabrication. Also the intensive scaling of modern semiconductor devices requires significant stress engineering to enhance carrier mobilities and avoid extended defect formation.\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/silvaco.com\/ko\/simulation-standard-ko\/3d-simulation-of-oxidation-induced-stress-using-cartesian-meshes-with-adaptive-refinement\/\" \/>\n<meta property=\"og:locale\" content=\"ko_KR\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"3D Simulation of Oxidation Induced Stress Using Cartesian Meshes with Adaptive Refinement\" \/>\n<meta property=\"og:description\" content=\"The formation of isolation trenches is one of the key process steps used in power device fabrication. Also the intensive scaling of modern semiconductor devices requires significant stress engineering to enhance carrier mobilities and avoid extended defect formation.\" \/>\n<meta property=\"og:url\" content=\"https:\/\/silvaco.com\/ko\/simulation-standard-ko\/3d-simulation-of-oxidation-induced-stress-using-cartesian-meshes-with-adaptive-refinement\/\" \/>\n<meta property=\"og:site_name\" content=\"Silvaco\" \/>\n<meta property=\"article:publisher\" content=\"https:\/\/www.facebook.com\/SilvacoSoftware\/\" \/>\n<meta property=\"article:published_time\" content=\"2009-01-01T15:00:34+00:00\" \/>\n<meta property=\"article:modified_time\" content=\"2026-10-16T16:04:51+00:00\" \/>\n<meta property=\"og:image\" content=\"https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/simstd_Q1_2009_a4.jpg\" \/>\n\t<meta property=\"og:image:width\" content=\"782\" \/>\n\t<meta property=\"og:image:height\" content=\"1012\" \/>\n\t<meta property=\"og:image:type\" content=\"image\/jpeg\" \/>\n<meta name=\"author\" content=\"Casey Molver\" \/>\n<meta name=\"twitter:card\" content=\"summary_large_image\" \/>\n<meta name=\"twitter:creator\" content=\"@SilvacoSoftware\" \/>\n<meta name=\"twitter:site\" content=\"@SilvacoSoftware\" \/>\n<meta name=\"twitter:label1\" content=\"\uae00\uc4f4\uc774\" \/>\n\t<meta name=\"twitter:data1\" content=\"Casey Molver\" \/>\n\t<meta name=\"twitter:label2\" content=\"\uc608\uc0c1 \ub418\ub294 \ud310\ub3c5 \uc2dc\uac04\" \/>\n\t<meta name=\"twitter:data2\" content=\"1 minute\" \/>\n<script type=\"application\/ld+json\" class=\"yoast-schema-graph\">{\"@context\":\"https:\\\/\\\/schema.org\",\"@graph\":[{\"@type\":\"TechArticle\",\"@id\":\"https:\\\/\\\/silvaco.com\\\/ko\\\/simulation-standard-ko\\\/3d-simulation-of-oxidation-induced-stress-using-cartesian-meshes-with-adaptive-refinement\\\/#article\",\"isPartOf\":{\"@id\":\"https:\\\/\\\/silvaco.com\\\/ko\\\/simulation-standard-ko\\\/3d-simulation-of-oxidation-induced-stress-using-cartesian-meshes-with-adaptive-refinement\\\/\"},\"author\":{\"name\":\"Casey Molver\",\"@id\":\"https:\\\/\\\/silvaco.com\\\/ja\\\/#\\\/schema\\\/person\\\/2763eb741ca5ac04477fdff50ed84c80\"},\"headline\":\"3D Simulation of Oxidation Induced Stress Using Cartesian Meshes with Adaptive Refinement\",\"datePublished\":\"2009-01-01T15:00:34+00:00\",\"dateModified\":\"2026-10-16T16:04:51+00:00\",\"mainEntityOfPage\":{\"@id\":\"https:\\\/\\\/silvaco.com\\\/ko\\\/simulation-standard-ko\\\/3d-simulation-of-oxidation-induced-stress-using-cartesian-meshes-with-adaptive-refinement\\\/\"},\"wordCount\":243,\"image\":{\"@id\":\"https:\\\/\\\/silvaco.com\\\/ko\\\/simulation-standard-ko\\\/3d-simulation-of-oxidation-induced-stress-using-cartesian-meshes-with-adaptive-refinement\\\/#primaryimage\"},\"thumbnailUrl\":\"https:\\\/\\\/silvaco.com\\\/wp-content\\\/uploads\\\/2020\\\/03\\\/simstd_Q1_2009_a4.jpg\",\"articleSection\":[\"Simulation Standard\"],\"inLanguage\":\"ko-KR\"},{\"@type\":\"WebPage\",\"@id\":\"https:\\\/\\\/silvaco.com\\\/ko\\\/simulation-standard-ko\\\/3d-simulation-of-oxidation-induced-stress-using-cartesian-meshes-with-adaptive-refinement\\\/\",\"url\":\"https:\\\/\\\/silvaco.com\\\/ko\\\/simulation-standard-ko\\\/3d-simulation-of-oxidation-induced-stress-using-cartesian-meshes-with-adaptive-refinement\\\/\",\"name\":\"3D Simulation of Oxidation Induced Stress Using Cartesian Meshes with Adaptive Refinement - Silvaco\",\"isPartOf\":{\"@id\":\"https:\\\/\\\/silvaco.com\\\/ja\\\/#website\"},\"primaryImageOfPage\":{\"@id\":\"https:\\\/\\\/silvaco.com\\\/ko\\\/simulation-standard-ko\\\/3d-simulation-of-oxidation-induced-stress-using-cartesian-meshes-with-adaptive-refinement\\\/#primaryimage\"},\"image\":{\"@id\":\"https:\\\/\\\/silvaco.com\\\/ko\\\/simulation-standard-ko\\\/3d-simulation-of-oxidation-induced-stress-using-cartesian-meshes-with-adaptive-refinement\\\/#primaryimage\"},\"thumbnailUrl\":\"https:\\\/\\\/silvaco.com\\\/wp-content\\\/uploads\\\/2020\\\/03\\\/simstd_Q1_2009_a4.jpg\",\"datePublished\":\"2009-01-01T15:00:34+00:00\",\"dateModified\":\"2026-10-16T16:04:51+00:00\",\"author\":{\"@id\":\"https:\\\/\\\/silvaco.com\\\/ja\\\/#\\\/schema\\\/person\\\/2763eb741ca5ac04477fdff50ed84c80\"},\"description\":\"The formation of isolation trenches is one of the key process steps used in power device fabrication. 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