{"id":30976,"date":"2009-07-01T16:42:18","date_gmt":"2009-07-01T16:42:18","guid":{"rendered":"https:\/\/silvaco.com\/%eb%b6%84%eb%a5%98%eb%90%98%ec%a7%80-%ec%95%8a%ec%9d%8c\/active-and-isolation-trench-fabrication-for-100v-vertical-locos-power-mosfets-with-victory-process-and-athena\/"},"modified":"2021-07-16T21:45:25","modified_gmt":"2021-07-17T04:45:25","slug":"active-and-isolation-trench-fabrication-for-100v-vertical-locos-power-mosfets-with-victory-process-and-athena","status":"publish","type":"post","link":"https:\/\/silvaco.com\/ko\/simulation-standard-ko\/active-and-isolation-trench-fabrication-for-100v-vertical-locos-power-mosfets-with-victory-process-and-athena\/","title":{"rendered":"Active and Isolation Trench Fabrication for 100V Vertical LOCOS Power MOSFETS with VICTORY PROCESS and ATHENA"},"content":{"rendered":"
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Active and Isolation Trench Fabrication for 100V Vertical LOCOS Power MOSFETS with VICTORY PROCESS and ATHENA<\/h1>\n

Introduction<\/strong><\/p>\n

Vertical LOCOS (VLOCOS) power MOSFET structures are becoming increasingly popular [1-3] for 100 V rated applications due to their high packing density, superior temperature characteristics and low on-state resistance. It has been shown that through careful design, the on-state resistance can exceed the silicon limit [4].<\/p>\n

This article gives a review and introduction into the layout and design of such structures is given. Initially a simple 2D half-cell is considered. The basic structure is then expanded to incorporate the termination and isolation cells. In the final section the simulated process is transferred into 3D where stress effects during processing are investigated and discussed.<\/p>\n<\/div><\/section><\/div>

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