{"id":30954,"date":"2010-04-01T15:52:18","date_gmt":"2010-04-01T15:52:18","guid":{"rendered":"https:\/\/silvaco.com\/%eb%b6%84%eb%a5%98%eb%90%98%ec%a7%80-%ec%95%8a%ec%9d%8c\/simulating-the-hysteresis-effects-of-si-sio2-interface-traps\/"},"modified":"2021-07-16T21:44:54","modified_gmt":"2021-07-17T04:44:54","slug":"simulating-the-hysteresis-effects-of-si-sio2-interface-traps","status":"publish","type":"post","link":"https:\/\/silvaco.com\/ko\/simulation-standard\/simulating-the-hysteresis-effects-of-si-sio2-interface-traps\/","title":{"rendered":"Simulating the Hysteresis effects of Si\/SiO2 Interface Traps"},"content":{"rendered":"<div id='template_overview'  class='avia-section main_color avia-section-small avia-no-border-styling  avia-bg-style-scroll  avia-builder-el-0  el_before_av_section  avia-builder-el-first   container_wrap fullsize' style='background-color: #ffffff;  margin-top:0px; margin-bottom:0px; '  ><div class='container' ><main  role=\"main\" itemprop=\"mainContentOfPage\"  class='template-page content  av-content-full alpha units'><div class='post-entry post-entry-type-page post-entry-30954'><div class='entry-content-wrapper clearfix'>\n<div class='flex_column_table av-equal-height-column-flextable -flextable' style='margin-top:20px; margin-bottom:0px; '><div class=\"flex_column av_three_fourth  flex_column_table_cell av-equal-height-column av-align-top first  avia-builder-el-1  el_before_av_one_fourth  avia-builder-el-first  \" style='padding:0px 0px 0px 0px ; border-radius:0px; '><section class=\"av_textblock_section \"  itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/BlogPosting\" itemprop=\"blogPost\" ><div class='avia_textblock  '   itemprop=\"text\" ><h1>Simulating the Hysteresis effects of Si\/SiO2 Interface Traps<\/h1>\n<h3>Introduction<\/h3>\n<p style=\"color: #000000; font-size: medium; font-style: normal; font-variant-ligatures: normal; font-variant-caps: normal; font-weight: 400; letter-spacing: normal; orphans: 2; text-align: start; text-indent: 0px; text-transform: none; white-space: normal; widows: 2; word-spacing: 0px; -webkit-text-stroke-width: 0px; text-decoration-style: initial; text-decoration-color: initial;\">The trap states at the interface of Silicon with Silicon Dioxide are usually divided conceptually into interface states and fixed oxide charges [1]. These trap states can cause the degradation of the performance of devices such as MOSFETs, when they are stressed into a regime where hot carriers are significant. This degradation is usually permanent and occurs for stress times of the order of 10<sup>3<\/sup>\u00a0seconds [2]. This phenomenon is well studied, and ATLAS has a degradation model for simulating these effects [3].<\/p>\n<p style=\"color: #000000; font-size: medium; font-style: normal; font-variant-ligatures: normal; font-variant-caps: normal; font-weight: 400; letter-spacing: normal; orphans: 2; text-align: start; text-indent: 0px; text-transform: none; white-space: normal; widows: 2; word-spacing: 0px; -webkit-text-stroke-width: 0px; text-decoration-style: initial; text-decoration-color: initial;\">If a MOSFET is stressed so as to avoid significant hot carrier current, the threshold voltage V<sub>t<\/sub>\u00a0can show hysteresis effects on the sub-second time scale [4]. This can affect the settling time of circuits containing MOSFETs. It is proposed in [4] that the mechanism for the hysteresis is tunnelling of electrons directly from the channel into the fixed oxide traps, as well as indirectly, via the interface states. The experimentally observed dependence of hysteresis on measurement time is apparently predicted by the model of Heiman et al [5]. This model is implemented in ATLAS and can be used to simulate hysteresis effects due to oxide trapping. [6] In the next section we describe this model and its implementation in ATLAS. Some examples of its use are then described.<\/p>\n<\/div><\/section><\/div><div class='av-flex-placeholder'><\/div><div class=\"flex_column av_one_fourth  flex_column_table_cell av-equal-height-column av-align-top av-zero-column-padding   avia-builder-el-3  el_after_av_three_fourth  avia-builder-el-last  \" style='border-radius:0px; ' id=\"whitepaper\" ><p><div  class='avia-builder-widget-area clearfix  avia-builder-el-4  el_before_av_image  avia-builder-el-first '><div id=\"nav_menu-29\" class=\"widget clearfix widget_nav_menu\"><div class=\"menu-simulation-standard-side-menu-korean-container\"><ul id=\"menu-simulation-standard-side-menu-korean\" class=\"menu\"><li id=\"menu-item-25039\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-25039\"><a href=\"https:\/\/silvaco.com\/ko\/technical-library\/simulation-standard\/\">Simulation Standard<\/a><\/li>\n<\/ul><\/div><\/div><\/div><br \/>\n<div  class='avia-image-container  av-styling-    avia-builder-el-5  el_after_av_sidebar  el_before_av_button  avia-align-center '  itemprop=\"image\" itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/ImageObject\"  ><div class='avia-image-container-inner'><div class='avia-image-overlay-wrap'><a href=\"\/dynamicweb\/jsp\/downloads\/DownloadDocStepsAction.do?req=download&amp;nm=simstd_Q2_2010_a3.pdf\" class='avia_image' target=\"_blank\" rel=\"noopener noreferrer\"><img decoding=\"async\" width=\"232\" height=\"300\" class='wp-image-19782 avia-img-lazy-loading-not-19782 avia_image' src=\"https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/simstd_Q2_2010_a3-232x300.jpg\" alt='' title='simstd_Q2_2010_a3'  itemprop=\"thumbnailUrl\" srcset=\"https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/simstd_Q2_2010_a3-232x300.jpg 232w, https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/simstd_Q2_2010_a3-768x994.jpg 768w, https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/simstd_Q2_2010_a3-545x705.jpg 545w, https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/simstd_Q2_2010_a3-29x37.jpg 29w, https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/simstd_Q2_2010_a3-43x55.jpg 43w, https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/simstd_Q2_2010_a3-37x48.jpg 37w, https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/simstd_Q2_2010_a3.jpg 782w\" sizes=\"(max-width: 232px) 100vw, 232px\" \/><\/a><\/div><\/div><\/div><br \/>\n<div  class='avia-button-wrap avia-button-center  avia-builder-el-6  el_after_av_image  avia-builder-el-last ' ><a href='\/dynamicweb\/jsp\/downloads\/DownloadDocStepsAction.do?req=download&amp;nm=simstd_Q2_2010_a3.pdf' class='avia-button  avia-color-grey   avia-icon_select-yes-right-icon avia-size-small avia-position-center ' target=\"_blank\" rel=\"noopener noreferrer\"><span class='avia_iconbox_title' >Download Simulation Standard<\/span><span class='avia_button_icon avia_button_icon_right' aria-hidden='true' data-av_icon='\ue875' data-av_iconfont='entypo-fontello'><\/span><\/a><\/div><\/p><\/div><\/div><!--close column table wrapper. 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Autoclose: 1 -->\n<\/p>\n","protected":false},"excerpt":{"rendered":"<p>The trap states at the interface of Silicon with Silicon Dioxide are usually divided conceptually into interface states and fixed oxide charges [1]. These trap states can cause the degradation of the performance of devices such as MOSFETs, when they are stressed into a regime where hot carriers are significant. This degradation is usually permanent and occurs for stress times of the order of 103 seconds [2]. This phenomenon is well studied, and ATLAS has a degradation model for simulating these effects [3].<\/p>\n","protected":false},"author":5,"featured_media":19782,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[7486],"tags":[],"yoast_head":"<!-- This site is optimized with the Yoast SEO Premium plugin v24.0 (Yoast SEO v24.0) - https:\/\/yoast.com\/wordpress\/plugins\/seo\/ -->\n<title>Simulating the Hysteresis effects of Si\/SiO2 Interface Traps - Silvaco<\/title>\n<meta name=\"description\" content=\"The trap states at the interface of Silicon with Silicon Dioxide are usually divided conceptually into interface states and fixed oxide charges [1].\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/silvaco.com\/ko\/simulation-standard\/simulating-the-hysteresis-effects-of-si-sio2-interface-traps\/\" \/>\n<meta property=\"og:locale\" content=\"ko_KR\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"Simulating the Hysteresis effects of Si\/SiO2 Interface Traps\" \/>\n<meta property=\"og:description\" content=\"The trap states at the interface of Silicon with Silicon Dioxide are usually divided conceptually into interface states and fixed oxide charges [1].\" \/>\n<meta property=\"og:url\" content=\"https:\/\/silvaco.com\/ko\/simulation-standard\/simulating-the-hysteresis-effects-of-si-sio2-interface-traps\/\" \/>\n<meta property=\"og:site_name\" content=\"Silvaco\" \/>\n<meta property=\"article:publisher\" content=\"https:\/\/www.facebook.com\/SilvacoSoftware\/\" \/>\n<meta property=\"article:published_time\" content=\"2010-04-01T15:52:18+00:00\" \/>\n<meta property=\"article:modified_time\" content=\"2021-07-17T04:44:54+00:00\" \/>\n<meta property=\"og:image\" content=\"https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/simstd_Q2_2010_a3.jpg\" \/>\n\t<meta property=\"og:image:width\" content=\"782\" \/>\n\t<meta property=\"og:image:height\" content=\"1012\" \/>\n\t<meta property=\"og:image:type\" content=\"image\/jpeg\" \/>\n<meta name=\"author\" content=\"Ingrid Schwarz\" \/>\n<meta name=\"twitter:card\" content=\"summary_large_image\" \/>\n<meta name=\"twitter:creator\" content=\"@SilvacoSoftware\" \/>\n<meta name=\"twitter:site\" content=\"@SilvacoSoftware\" \/>\n<meta name=\"twitter:label1\" content=\"\uae00\uc4f4\uc774\" \/>\n\t<meta name=\"twitter:data1\" content=\"Ingrid Schwarz\" \/>\n\t<meta name=\"twitter:label2\" content=\"\uc608\uc0c1 \ub418\ub294 \ud310\ub3c5 \uc2dc\uac04\" \/>\n\t<meta name=\"twitter:data2\" content=\"5\ubd84\" \/>\n<script type=\"application\/ld+json\" class=\"yoast-schema-graph\">{\"@context\":\"https:\/\/schema.org\",\"@graph\":[{\"@type\":\"WebPage\",\"@id\":\"https:\/\/silvaco.com\/ko\/simulation-standard\/simulating-the-hysteresis-effects-of-si-sio2-interface-traps\/\",\"url\":\"https:\/\/silvaco.com\/ko\/simulation-standard\/simulating-the-hysteresis-effects-of-si-sio2-interface-traps\/\",\"name\":\"Simulating the Hysteresis effects of Si\/SiO2 Interface Traps - 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