{"id":30918,"date":"2011-07-01T17:07:44","date_gmt":"2011-07-01T17:07:44","guid":{"rendered":"https:\/\/silvaco.com\/%eb%b6%84%eb%a5%98%eb%90%98%ec%a7%80-%ec%95%8a%ec%9d%8c\/3d-simulation-of-ion-enhanced-chemical-etching-with-victory-process\/"},"modified":"2026-10-16T08:53:30","modified_gmt":"2026-10-16T15:53:30","slug":"3d-simulation-of-ion-enhanced-chemical-etching-with-victory-process","status":"publish","type":"post","link":"https:\/\/silvaco.com\/ko\/simulation-standard-ko\/3d-simulation-of-ion-enhanced-chemical-etching-with-victory-process\/","title":{"rendered":"3D Simulation of Ion Enhanced Chemical Etching with VICTORY Process"},"content":{"rendered":"

3D Simulation of Ion Enhanced Chemical Etching with VICTORY Process<\/h1>\n

Introduction<\/strong><\/p>\n

VICTORY Process is a tool for 3D simulation of the semiconductor industry\u2019s technological processes. It allows stable and accurate modeling of the changes in a structure\u2019s 3D geometry within etching reactors under various conditions. VICTORY Process achieves this by combining a powerful and robust hard-coded numerical engine, based on the Level Set method, with a flexible Open Modeling library which is extendable by users to suit their specific requirements.<\/p>\n

The Open Modeling library, supplied with VICTORY Process, includes several predefined models one of which is the model for Ion Enhanced Chemical Etching (IECE model). This model assumes that the ambient within the plasma etching reactor consists of two distinct types of species:<\/p>\n