{"id":30867,"date":"2013-07-01T15:12:32","date_gmt":"2013-07-01T15:12:32","guid":{"rendered":"https:\/\/silvaco.com\/%eb%b6%84%eb%a5%98%eb%90%98%ec%a7%80-%ec%95%8a%ec%9d%8c\/state-of-the-art-2d-and-3d-process-and-device-simulation-of-gan-based-devices\/"},"modified":"2021-07-16T21:41:43","modified_gmt":"2021-07-17T04:41:43","slug":"state-of-the-art-2d-and-3d-process-and-device-simulation-of-gan-based-devices","status":"publish","type":"post","link":"https:\/\/silvaco.com\/ko\/simulation-standard-ko\/state-of-the-art-2d-and-3d-process-and-device-simulation-of-gan-based-devices\/","title":{"rendered":"State of the Art 2D and 3D Process and Device Simulation of GaN-Based Devices"},"content":{"rendered":"
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State of the Art 2D and 3D Process and Device Simulation of GaN-Based Devices<\/h1>\n

Introduction<\/strong><\/p>\n

Silicon has long been the semiconductor of choice for high-voltage power electronics applications. However, wide-bandgap semiconductors such as SiC and GaN have begun to attract attention because they are projected to have much better performance than silicon. In comparison with silicon, wide-bandgap semiconductors offer a lower intrinsic carrier concentration, a higher electric breakdown field, a higher thermal conductivity, and a faster saturated electron drift velocity.<\/p>\n

Simulating GaN devices is more challenging compared to Silicon. Indeed very low intrinsic concentration combined with high doping values is usually detrimental to convergence. Since GaN is as wide a band gap material as SiC, we thus use the same simulation approach used for SiC and describe in details\u00a0here<\/a>.<\/p>\n

In the following paragraphs we will first review the physics involved and needed for accurate simulation of GaN based devices. We will then illustrate our simulation flow with few examples.<\/p>\n<\/div><\/section><\/div>

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