{"id":30795,"date":"2015-10-01T19:15:15","date_gmt":"2015-10-01T19:15:15","guid":{"rendered":"https:\/\/silvaco.com\/%eb%b6%84%eb%a5%98%eb%90%98%ec%a7%80-%ec%95%8a%ec%9d%8c\/3d-tcad-mixed-mode-simulation-of-current-filaments-in-igbt-multicell-array-under-short-circuit-condition\/"},"modified":"2021-07-16T21:39:34","modified_gmt":"2021-07-17T04:39:34","slug":"3d-tcad-mixed-mode-simulation-of-current-filaments-in-igbt-multicell-array-under-short-circuit-condition","status":"publish","type":"post","link":"https:\/\/silvaco.com\/ko\/simulation-standard-ko\/3d-tcad-mixed-mode-simulation-of-current-filaments-in-igbt-multicell-array-under-short-circuit-condition\/","title":{"rendered":"3D TCAD Mixed-Mode Simulation of Current Filaments in IGBT Multicell Array under Short-Circuit Condition"},"content":{"rendered":"
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3D TCAD Mixed-Mode Simulation of Current Filaments in IGBT Multicell Array under Short-Circuit Condition<\/h1>\n

Background<\/strong><\/p>\n

A power IGBT (Insulated Gate Bipolar Transistor) is conventionally made up of a repetitive array of homogenous IGBT cells. Such a homogenous configuration renders a uniform current flow across the active surface area of the IGBT chip when the IGBT is turned on. Under a short-circuit condition, however, the IGBT being turned on is exposed to a very high collector-to-emitter voltage. In this condition, the IGBT conducts a very high collector current, leading to correspondingly high power dissipation in the form of heat flowing uniformly across the chip. If the heating of the chip exceeds a critical level during a short-circuit operation, the device may fail or even get destroyed by local overheating in conjunction with the establishment of current filaments in a localized area, or the hot spots, within the device.<\/p>\n

Modeling and Simulation<\/strong><\/p>\n

In cell mode of Victory Process an IGBT array consisting of 8 cells, as shown in Figure 1, is generated by joining 8 copies of the IGBT single cell together. This IGBT multicell array is uniform along its width of 40 \u00b5m. Each IGBT single cell is 20 \u00b5m long and features a 1.3 kV trench-gate design with a fieldstop layer (n-buffer) that consumes 16 \u00b5m out of the n-drift region thickness of 134 \u00a8\u00b5m. For the sake of convenience, the doping profiles of the cell structure are modeled with analytic functions.<\/p>\n<\/div><\/section><\/div>

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