{"id":30755,"date":"2017-04-01T18:10:39","date_gmt":"2017-04-01T18:10:39","guid":{"rendered":"https:\/\/silvaco.com\/%eb%b6%84%eb%a5%98%eb%90%98%ec%a7%80-%ec%95%8a%ec%9d%8c\/effect-of-fin-thickness-on-subthreshold-characteristics-of-10-nm-finfets-using-3d-tcad\/"},"modified":"2026-10-16T08:13:52","modified_gmt":"2026-10-16T15:13:52","slug":"effect-of-fin-thickness-on-subthreshold-characteristics-of-10-nm-finfets-using-3d-tcad","status":"publish","type":"post","link":"https:\/\/silvaco.com\/ko\/simulation-standard-ko\/effect-of-fin-thickness-on-subthreshold-characteristics-of-10-nm-finfets-using-3d-tcad\/","title":{"rendered":"Effect of Fin Thickness on Subthreshold Characteristics of 10 nm FinFETs Using 3D TCAD"},"content":{"rendered":"<h1><span style=\"font-size: 34px; letter-spacing: 0px;\">Effect of Fin Thickness on Subthreshold Characteristics of 10 nm FinFETs Using 3D TCAD<\/span><\/h1>\n<p align=\"center\"><em>This work was submitted to Silvaco Inc. by Rochester Institute of Technology, Department of Electrical &amp; Microelectronic Engineering.<br \/>\nSilvaco would like to thank the authors Abhijeet Walke and Santosh K. Kurinec<\/em><\/p>\n<p><strong>Introduction<\/strong><\/p>\n<p>The planar bulk Si metal-oxide semiconductor field-effect transistor (MOSFET) has reached its scaling limit due to various short channel effects (SCE). With 20 nm advanced planar technology, the source and drain encroached into channel resulting in off state leakage current. Tri gate FinFET devices have already replaced conventional planar MOSFETs for 14nm and beyond due to their superior control over the channel resulting in lower values of subthreshold swing (SS) and reduced drain induced barrier lowering (DIBL). Nevertheless, gate induced drain leakage is found to be the limiting factor in achieving ultralow (&lt;100pA\/um) values of IOFF. In this work, we have studied the effect of fin thickness on subthreshold characteristics of bulk nFinFET using three dimensional simulation.<\/p>\n<p><img loading=\"lazy\" width=\"782\" height=\"1012\" src=\"https:\/\/silvaco.com\/wp-content\/uploads\/2020\/02\/simstd_Q2_2017_a1.jpg\" class=\"cleaned-enfold-image\" alt=\"\" decoding=\"async\" loading=\"lazy\" srcset=\"https:\/\/silvaco.com\/wp-content\/uploads\/2020\/02\/simstd_Q2_2017_a1.jpg 782w, https:\/\/silvaco.com\/wp-content\/uploads\/2020\/02\/simstd_Q2_2017_a1-232x300.jpg 232w, https:\/\/silvaco.com\/wp-content\/uploads\/2020\/02\/simstd_Q2_2017_a1-768x994.jpg 768w, https:\/\/silvaco.com\/wp-content\/uploads\/2020\/02\/simstd_Q2_2017_a1-545x705.jpg 545w, https:\/\/silvaco.com\/wp-content\/uploads\/2020\/02\/simstd_Q2_2017_a1-29x37.jpg 29w, https:\/\/silvaco.com\/wp-content\/uploads\/2020\/02\/simstd_Q2_2017_a1-43x55.jpg 43w, https:\/\/silvaco.com\/wp-content\/uploads\/2020\/02\/simstd_Q2_2017_a1-37x48.jpg 37w\" sizes=\"auto, (max-width: 782px) 100vw, 782px\" \/><\/p>\n<p><a href=\"https:\/\/silvaco.com\/dynamicweb\/jsp\/downloads\/DownloadDocStepsAction.do?req=download&#038;nm=simstd_Q2_2017_a1.pdf\" class=\"BGT-btn\" target=\"_blank\" rel=\"noopener noreferrer\">Download Simulation Standard<\/a><\/p>\n","protected":false},"excerpt":{"rendered":"<p>The planar bulk Si metal-oxide semiconductor field-effect transistor (MOSFET) has reached its scaling limit due to various short channel effects (SCE). With 20 nm advanced planar technology, the source and drain encroached into channel resulting in off state leakage current. Tri gate FinFET devices have already replaced conventional planar MOSFETs for 14nm and beyond due to their superior control over the channel resulting in lower values of subthreshold swing (SS) and reduced drain induced barrier lowering (DIBL). Nevertheless, gate induced drain leakage is found to be the limiting factor in achieving ultralow (<\/p>\n","protected":false},"author":5,"featured_media":19098,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"inline_featured_image":false,"footnotes":""},"categories":[7486],"tags":[],"class_list":["post-30755","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-simulation-standard-ko","entry","has-media"],"yoast_head":"<!-- This site is optimized with the Yoast SEO Premium plugin v28.7 (Yoast SEO v28.7) - https:\/\/yoast.com\/product\/yoast-seo-premium-wordpress\/ -->\n<title>Effect of Fin Thickness on Subthreshold Characteristics of 10 nm FinFETs Using 3D TCAD - Silvaco<\/title>\n<meta name=\"description\" content=\"The planar bulk Si metal-oxide semiconductor field-effect transistor (MOSFET) has reached its scaling limit due to various short channel effects (SCE).\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/silvaco.com\/ko\/simulation-standard-ko\/effect-of-fin-thickness-on-subthreshold-characteristics-of-10-nm-finfets-using-3d-tcad\/\" \/>\n<meta property=\"og:locale\" content=\"ko_KR\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"Effect of Fin Thickness on Subthreshold Characteristics of 10 nm FinFETs Using 3D TCAD\" \/>\n<meta property=\"og:description\" content=\"The planar bulk Si metal-oxide semiconductor field-effect transistor (MOSFET) has reached its scaling limit due to various short channel effects (SCE).\" \/>\n<meta property=\"og:url\" content=\"https:\/\/silvaco.com\/ko\/simulation-standard-ko\/effect-of-fin-thickness-on-subthreshold-characteristics-of-10-nm-finfets-using-3d-tcad\/\" \/>\n<meta property=\"og:site_name\" content=\"Silvaco\" \/>\n<meta property=\"article:publisher\" content=\"https:\/\/www.facebook.com\/SilvacoSoftware\/\" \/>\n<meta property=\"article:published_time\" content=\"2017-04-01T18:10:39+00:00\" \/>\n<meta property=\"article:modified_time\" content=\"2026-10-16T15:13:52+00:00\" \/>\n<meta property=\"og:image\" content=\"https:\/\/silvaco.com\/wp-content\/uploads\/2020\/02\/simstd_Q2_2017_a1.jpg\" \/>\n\t<meta property=\"og:image:width\" content=\"782\" \/>\n\t<meta property=\"og:image:height\" content=\"1012\" \/>\n\t<meta property=\"og:image:type\" content=\"image\/jpeg\" \/>\n<meta name=\"author\" content=\"Ingrid Schwarz\" \/>\n<meta name=\"twitter:card\" content=\"summary_large_image\" \/>\n<meta name=\"twitter:creator\" content=\"@SilvacoSoftware\" \/>\n<meta name=\"twitter:site\" content=\"@SilvacoSoftware\" \/>\n<meta name=\"twitter:label1\" content=\"\uae00\uc4f4\uc774\" \/>\n\t<meta name=\"twitter:data1\" content=\"Ingrid Schwarz\" \/>\n\t<meta name=\"twitter:label2\" content=\"\uc608\uc0c1 \ub418\ub294 \ud310\ub3c5 \uc2dc\uac04\" \/>\n\t<meta name=\"twitter:data2\" content=\"1 minute\" \/>\n<script type=\"application\/ld+json\" class=\"yoast-schema-graph\">{\"@context\":\"https:\\\/\\\/schema.org\",\"@graph\":[{\"@type\":\"Article\",\"@id\":\"https:\\\/\\\/silvaco.com\\\/ko\\\/simulation-standard-ko\\\/effect-of-fin-thickness-on-subthreshold-characteristics-of-10-nm-finfets-using-3d-tcad\\\/#article\",\"isPartOf\":{\"@id\":\"https:\\\/\\\/silvaco.com\\\/ko\\\/simulation-standard-ko\\\/effect-of-fin-thickness-on-subthreshold-characteristics-of-10-nm-finfets-using-3d-tcad\\\/\"},\"author\":{\"name\":\"Ingrid Schwarz\",\"@id\":\"https:\\\/\\\/silvaco.com\\\/#\\\/schema\\\/person\\\/f85f880bc8a7ce823b36a9072e1f0a29\"},\"headline\":\"Effect of Fin Thickness on Subthreshold Characteristics of 10 nm FinFETs Using 3D TCAD\",\"datePublished\":\"2017-04-01T18:10:39+00:00\",\"dateModified\":\"2026-10-16T15:13:52+00:00\",\"mainEntityOfPage\":{\"@id\":\"https:\\\/\\\/silvaco.com\\\/ko\\\/simulation-standard-ko\\\/effect-of-fin-thickness-on-subthreshold-characteristics-of-10-nm-finfets-using-3d-tcad\\\/\"},\"wordCount\":179,\"image\":{\"@id\":\"https:\\\/\\\/silvaco.com\\\/ko\\\/simulation-standard-ko\\\/effect-of-fin-thickness-on-subthreshold-characteristics-of-10-nm-finfets-using-3d-tcad\\\/#primaryimage\"},\"thumbnailUrl\":\"https:\\\/\\\/silvaco.com\\\/wp-content\\\/uploads\\\/2020\\\/02\\\/simstd_Q2_2017_a1.jpg\",\"articleSection\":[\"Simulation Standard\"],\"inLanguage\":\"ko-KR\"},{\"@type\":\"WebPage\",\"@id\":\"https:\\\/\\\/silvaco.com\\\/ko\\\/simulation-standard-ko\\\/effect-of-fin-thickness-on-subthreshold-characteristics-of-10-nm-finfets-using-3d-tcad\\\/\",\"url\":\"https:\\\/\\\/silvaco.com\\\/ko\\\/simulation-standard-ko\\\/effect-of-fin-thickness-on-subthreshold-characteristics-of-10-nm-finfets-using-3d-tcad\\\/\",\"name\":\"Effect of Fin Thickness on Subthreshold Characteristics of 10 nm FinFETs Using 3D TCAD - Silvaco\",\"isPartOf\":{\"@id\":\"https:\\\/\\\/silvaco.com\\\/#website\"},\"primaryImageOfPage\":{\"@id\":\"https:\\\/\\\/silvaco.com\\\/ko\\\/simulation-standard-ko\\\/effect-of-fin-thickness-on-subthreshold-characteristics-of-10-nm-finfets-using-3d-tcad\\\/#primaryimage\"},\"image\":{\"@id\":\"https:\\\/\\\/silvaco.com\\\/ko\\\/simulation-standard-ko\\\/effect-of-fin-thickness-on-subthreshold-characteristics-of-10-nm-finfets-using-3d-tcad\\\/#primaryimage\"},\"thumbnailUrl\":\"https:\\\/\\\/silvaco.com\\\/wp-content\\\/uploads\\\/2020\\\/02\\\/simstd_Q2_2017_a1.jpg\",\"datePublished\":\"2017-04-01T18:10:39+00:00\",\"dateModified\":\"2026-10-16T15:13:52+00:00\",\"author\":{\"@id\":\"https:\\\/\\\/silvaco.com\\\/#\\\/schema\\\/person\\\/f85f880bc8a7ce823b36a9072e1f0a29\"},\"description\":\"The planar bulk Si metal-oxide semiconductor field-effect transistor (MOSFET) has reached its scaling limit due to various short channel effects (SCE).\",\"breadcrumb\":{\"@id\":\"https:\\\/\\\/silvaco.com\\\/ko\\\/simulation-standard-ko\\\/effect-of-fin-thickness-on-subthreshold-characteristics-of-10-nm-finfets-using-3d-tcad\\\/#breadcrumb\"},\"inLanguage\":\"ko-KR\",\"potentialAction\":[{\"@type\":\"ReadAction\",\"target\":[\"https:\\\/\\\/silvaco.com\\\/ko\\\/simulation-standard-ko\\\/effect-of-fin-thickness-on-subthreshold-characteristics-of-10-nm-finfets-using-3d-tcad\\\/\"]}]},{\"@type\":\"ImageObject\",\"inLanguage\":\"ko-KR\",\"@id\":\"https:\\\/\\\/silvaco.com\\\/ko\\\/simulation-standard-ko\\\/effect-of-fin-thickness-on-subthreshold-characteristics-of-10-nm-finfets-using-3d-tcad\\\/#primaryimage\",\"url\":\"https:\\\/\\\/silvaco.com\\\/wp-content\\\/uploads\\\/2020\\\/02\\\/simstd_Q2_2017_a1.jpg\",\"contentUrl\":\"https:\\\/\\\/silvaco.com\\\/wp-content\\\/uploads\\\/2020\\\/02\\\/simstd_Q2_2017_a1.jpg\",\"width\":782,\"height\":1012},{\"@type\":\"BreadcrumbList\",\"@id\":\"https:\\\/\\\/silvaco.com\\\/ko\\\/simulation-standard-ko\\\/effect-of-fin-thickness-on-subthreshold-characteristics-of-10-nm-finfets-using-3d-tcad\\\/#breadcrumb\",\"itemListElement\":[{\"@type\":\"ListItem\",\"position\":1,\"name\":\"Home\",\"item\":\"https:\\\/\\\/silvaco.com\\\/\"},{\"@type\":\"ListItem\",\"position\":2,\"name\":\"Effect of Fin Thickness on Subthreshold Characteristics of 10 nm FinFETs Using 3D TCAD\"}]},{\"@type\":\"WebSite\",\"@id\":\"https:\\\/\\\/silvaco.com\\\/#website\",\"url\":\"https:\\\/\\\/silvaco.com\\\/\",\"name\":\"Silvaco\",\"description\":\"\",\"potentialAction\":[{\"@type\":\"SearchAction\",\"target\":{\"@type\":\"EntryPoint\",\"urlTemplate\":\"https:\\\/\\\/silvaco.com\\\/?s={search_term_string}\"},\"query-input\":{\"@type\":\"PropertyValueSpecification\",\"valueRequired\":true,\"valueName\":\"search_term_string\"}}],\"inLanguage\":\"ko-KR\"},{\"@type\":\"Person\",\"@id\":\"https:\\\/\\\/silvaco.com\\\/#\\\/schema\\\/person\\\/f85f880bc8a7ce823b36a9072e1f0a29\",\"name\":\"Ingrid Schwarz\",\"image\":{\"@type\":\"ImageObject\",\"inLanguage\":\"ko-KR\",\"@id\":\"https:\\\/\\\/secure.gravatar.com\\\/avatar\\\/d4109cd71bc55d682dbac038c13e165565c1532ac9a68769c8073507e0255505?s=96&d=blank&r=g\",\"url\":\"https:\\\/\\\/secure.gravatar.com\\\/avatar\\\/d4109cd71bc55d682dbac038c13e165565c1532ac9a68769c8073507e0255505?s=96&d=blank&r=g\",\"contentUrl\":\"https:\\\/\\\/secure.gravatar.com\\\/avatar\\\/d4109cd71bc55d682dbac038c13e165565c1532ac9a68769c8073507e0255505?s=96&d=blank&r=g\",\"caption\":\"Ingrid Schwarz\"},\"url\":\"https:\\\/\\\/silvaco.com\\\/ko\\\/author\\\/ingrid\\\/\"}]}<\/script>\n<!-- \/ Yoast SEO Premium plugin. -->","yoast_head_json":{"title":"Effect of Fin Thickness on Subthreshold Characteristics of 10 nm FinFETs Using 3D TCAD - Silvaco","description":"The planar bulk Si metal-oxide semiconductor field-effect transistor (MOSFET) has reached its scaling limit due to various short channel effects (SCE).","robots":{"index":"index","follow":"follow","max-snippet":"max-snippet:-1","max-image-preview":"max-image-preview:large","max-video-preview":"max-video-preview:-1"},"canonical":"https:\/\/silvaco.com\/ko\/simulation-standard-ko\/effect-of-fin-thickness-on-subthreshold-characteristics-of-10-nm-finfets-using-3d-tcad\/","og_locale":"ko_KR","og_type":"article","og_title":"Effect of Fin Thickness on Subthreshold Characteristics of 10 nm FinFETs Using 3D TCAD","og_description":"The planar bulk Si metal-oxide semiconductor field-effect transistor (MOSFET) has reached its scaling limit due to various short channel effects (SCE).","og_url":"https:\/\/silvaco.com\/ko\/simulation-standard-ko\/effect-of-fin-thickness-on-subthreshold-characteristics-of-10-nm-finfets-using-3d-tcad\/","og_site_name":"Silvaco","article_publisher":"https:\/\/www.facebook.com\/SilvacoSoftware\/","article_published_time":"2017-04-01T18:10:39+00:00","article_modified_time":"2026-10-16T15:13:52+00:00","og_image":[{"width":782,"height":1012,"url":"https:\/\/silvaco.com\/wp-content\/uploads\/2020\/02\/simstd_Q2_2017_a1.jpg","type":"image\/jpeg"}],"author":"Ingrid Schwarz","twitter_card":"summary_large_image","twitter_creator":"@SilvacoSoftware","twitter_site":"@SilvacoSoftware","twitter_misc":{"\uae00\uc4f4\uc774":"Ingrid Schwarz","\uc608\uc0c1 \ub418\ub294 \ud310\ub3c5 \uc2dc\uac04":"1 minute"},"schema":{"@context":"https:\/\/schema.org","@graph":[{"@type":"Article","@id":"https:\/\/silvaco.com\/ko\/simulation-standard-ko\/effect-of-fin-thickness-on-subthreshold-characteristics-of-10-nm-finfets-using-3d-tcad\/#article","isPartOf":{"@id":"https:\/\/silvaco.com\/ko\/simulation-standard-ko\/effect-of-fin-thickness-on-subthreshold-characteristics-of-10-nm-finfets-using-3d-tcad\/"},"author":{"name":"Ingrid Schwarz","@id":"https:\/\/silvaco.com\/#\/schema\/person\/f85f880bc8a7ce823b36a9072e1f0a29"},"headline":"Effect of Fin Thickness on Subthreshold Characteristics of 10 nm FinFETs Using 3D TCAD","datePublished":"2017-04-01T18:10:39+00:00","dateModified":"2026-10-16T15:13:52+00:00","mainEntityOfPage":{"@id":"https:\/\/silvaco.com\/ko\/simulation-standard-ko\/effect-of-fin-thickness-on-subthreshold-characteristics-of-10-nm-finfets-using-3d-tcad\/"},"wordCount":179,"image":{"@id":"https:\/\/silvaco.com\/ko\/simulation-standard-ko\/effect-of-fin-thickness-on-subthreshold-characteristics-of-10-nm-finfets-using-3d-tcad\/#primaryimage"},"thumbnailUrl":"https:\/\/silvaco.com\/wp-content\/uploads\/2020\/02\/simstd_Q2_2017_a1.jpg","articleSection":["Simulation Standard"],"inLanguage":"ko-KR"},{"@type":"WebPage","@id":"https:\/\/silvaco.com\/ko\/simulation-standard-ko\/effect-of-fin-thickness-on-subthreshold-characteristics-of-10-nm-finfets-using-3d-tcad\/","url":"https:\/\/silvaco.com\/ko\/simulation-standard-ko\/effect-of-fin-thickness-on-subthreshold-characteristics-of-10-nm-finfets-using-3d-tcad\/","name":"Effect of Fin Thickness on Subthreshold Characteristics of 10 nm FinFETs Using 3D TCAD - Silvaco","isPartOf":{"@id":"https:\/\/silvaco.com\/#website"},"primaryImageOfPage":{"@id":"https:\/\/silvaco.com\/ko\/simulation-standard-ko\/effect-of-fin-thickness-on-subthreshold-characteristics-of-10-nm-finfets-using-3d-tcad\/#primaryimage"},"image":{"@id":"https:\/\/silvaco.com\/ko\/simulation-standard-ko\/effect-of-fin-thickness-on-subthreshold-characteristics-of-10-nm-finfets-using-3d-tcad\/#primaryimage"},"thumbnailUrl":"https:\/\/silvaco.com\/wp-content\/uploads\/2020\/02\/simstd_Q2_2017_a1.jpg","datePublished":"2017-04-01T18:10:39+00:00","dateModified":"2026-10-16T15:13:52+00:00","author":{"@id":"https:\/\/silvaco.com\/#\/schema\/person\/f85f880bc8a7ce823b36a9072e1f0a29"},"description":"The planar bulk Si metal-oxide semiconductor field-effect transistor (MOSFET) has reached its scaling limit due to various short channel effects (SCE).","breadcrumb":{"@id":"https:\/\/silvaco.com\/ko\/simulation-standard-ko\/effect-of-fin-thickness-on-subthreshold-characteristics-of-10-nm-finfets-using-3d-tcad\/#breadcrumb"},"inLanguage":"ko-KR","potentialAction":[{"@type":"ReadAction","target":["https:\/\/silvaco.com\/ko\/simulation-standard-ko\/effect-of-fin-thickness-on-subthreshold-characteristics-of-10-nm-finfets-using-3d-tcad\/"]}]},{"@type":"ImageObject","inLanguage":"ko-KR","@id":"https:\/\/silvaco.com\/ko\/simulation-standard-ko\/effect-of-fin-thickness-on-subthreshold-characteristics-of-10-nm-finfets-using-3d-tcad\/#primaryimage","url":"https:\/\/silvaco.com\/wp-content\/uploads\/2020\/02\/simstd_Q2_2017_a1.jpg","contentUrl":"https:\/\/silvaco.com\/wp-content\/uploads\/2020\/02\/simstd_Q2_2017_a1.jpg","width":782,"height":1012},{"@type":"BreadcrumbList","@id":"https:\/\/silvaco.com\/ko\/simulation-standard-ko\/effect-of-fin-thickness-on-subthreshold-characteristics-of-10-nm-finfets-using-3d-tcad\/#breadcrumb","itemListElement":[{"@type":"ListItem","position":1,"name":"Home","item":"https:\/\/silvaco.com\/"},{"@type":"ListItem","position":2,"name":"Effect of Fin Thickness on Subthreshold Characteristics of 10 nm FinFETs Using 3D TCAD"}]},{"@type":"WebSite","@id":"https:\/\/silvaco.com\/#website","url":"https:\/\/silvaco.com\/","name":"Silvaco","description":"","potentialAction":[{"@type":"SearchAction","target":{"@type":"EntryPoint","urlTemplate":"https:\/\/silvaco.com\/?s={search_term_string}"},"query-input":{"@type":"PropertyValueSpecification","valueRequired":true,"valueName":"search_term_string"}}],"inLanguage":"ko-KR"},{"@type":"Person","@id":"https:\/\/silvaco.com\/#\/schema\/person\/f85f880bc8a7ce823b36a9072e1f0a29","name":"Ingrid Schwarz","image":{"@type":"ImageObject","inLanguage":"ko-KR","@id":"https:\/\/secure.gravatar.com\/avatar\/d4109cd71bc55d682dbac038c13e165565c1532ac9a68769c8073507e0255505?s=96&d=blank&r=g","url":"https:\/\/secure.gravatar.com\/avatar\/d4109cd71bc55d682dbac038c13e165565c1532ac9a68769c8073507e0255505?s=96&d=blank&r=g","contentUrl":"https:\/\/secure.gravatar.com\/avatar\/d4109cd71bc55d682dbac038c13e165565c1532ac9a68769c8073507e0255505?s=96&d=blank&r=g","caption":"Ingrid Schwarz"},"url":"https:\/\/silvaco.com\/ko\/author\/ingrid\/"}]}},"_links":{"self":[{"href":"https:\/\/silvaco.com\/ko\/wp-json\/wp\/v2\/posts\/30755","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/silvaco.com\/ko\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/silvaco.com\/ko\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/silvaco.com\/ko\/wp-json\/wp\/v2\/users\/5"}],"replies":[{"embeddable":true,"href":"https:\/\/silvaco.com\/ko\/wp-json\/wp\/v2\/comments?post=30755"}],"version-history":[{"count":3,"href":"https:\/\/silvaco.com\/ko\/wp-json\/wp\/v2\/posts\/30755\/revisions"}],"predecessor-version":[{"id":956951,"href":"https:\/\/silvaco.com\/ko\/wp-json\/wp\/v2\/posts\/30755\/revisions\/956951"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/silvaco.com\/ko\/wp-json\/wp\/v2\/media\/19098"}],"wp:attachment":[{"href":"https:\/\/silvaco.com\/ko\/wp-json\/wp\/v2\/media?parent=30755"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/silvaco.com\/ko\/wp-json\/wp\/v2\/categories?post=30755"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/silvaco.com\/ko\/wp-json\/wp\/v2\/tags?post=30755"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}