{"id":30737,"date":"2017-10-01T00:02:08","date_gmt":"2017-10-01T00:02:08","guid":{"rendered":"https:\/\/silvaco.com\/%eb%b6%84%eb%a5%98%eb%90%98%ec%a7%80-%ec%95%8a%ec%9d%8c\/tcad-simulation-of-gan-based-vertical-fets-hemts\/"},"modified":"2021-07-16T21:36:41","modified_gmt":"2021-07-17T04:36:41","slug":"tcad-simulation-of-gan-based-vertical-fets-hemts","status":"publish","type":"post","link":"https:\/\/silvaco.com\/ko\/simulation-standard-ko\/tcad-simulation-of-gan-based-vertical-fets-hemts\/","title":{"rendered":"TCAD Simulation of GaN-based Vertical FETs (HEMTs)"},"content":{"rendered":"
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TCAD Simulation of GaN-based Vertical FETs\u00a0(HEMTs)<\/strong><\/h1>\n

Gallium nitride (GaN)-based devices have entered the power electronics market and are showing excellent progress in the medium power conversion application [1]-[5]. For high-power conversion application, devices with vertical geometry are preferred over lateral geometry, since the former allows more current for a given chip area, therefore making it more economical and feasible solution for high-voltage and high-current application [3]. It is generally considered that for high voltage\/high current applications (900V\/100A), vertical device structures might be more suitable owing to their capability of achieving lower specific on-resistance and high breakdown voltage simultaneously [3, 4].<\/p>\n

This Simulation Standard article discusses modeling and simulation of two recently proposed types of GaN\u2011based Vertical Field-Effect Transistors (FETs) which operate as high electron mobility transistors (HEMTs):<\/p>\n