{"id":28233,"date":"2019-09-04T16:45:12","date_gmt":"2019-09-04T16:45:12","guid":{"rendered":"https:\/\/silvaco.com\/%eb%b6%84%eb%a5%98%eb%90%98%ec%a7%80-%ec%95%8a%ec%9d%8c\/3d-tcad-simulation-for-power-devices\/"},"modified":"2019-09-04T16:45:12","modified_gmt":"2019-09-04T16:45:12","slug":"3d-tcad-simulation-for-power-devices","status":"publish","type":"post","link":"https:\/\/silvaco.com\/ko\/tcad-ko\/tcad-blogs-ko\/3d-tcad-simulation-for-power-devices\/","title":{"rendered":"3D TCAD Simulation for Power Devices"},"content":{"rendered":"
\n

3D TCAD Simulation for Power Devices<\/h1>\n

*** This article by\u00a0<\/strong>Daniel Payne<\/strong><\/a>\u00a0was first published on\u00a0<\/strong>SemiWiki.com<\/strong><\/a>\u00a0***<\/strong><\/p>\n

My first IC design back in 1978 was a DRAM and it ran on 12V, 5V and -5V, but then my second DRAM was using only a 5V supply. Today we see SOCs running under a 1V supply voltage, but there is a totally different market for\u00a0power devices<\/strong>\u00a0that are at the other end of the voltage spectrum and they handle switching ranges from 12V \u2013 250V. To learn more about power devices and how the process and device modeling is done, I read a\u00a0Silvaco<\/strong>\u00a0publication entitled\u00a0Advanced Process and Device 3D TCAD Simulation of Split-Gate Trench UMOSFET<\/em><\/a>.<\/p>\n

For vertical discrete power MOSFETs there are two important specifications that engineers look at:<\/p>\n