TCAD 공정 시뮬레이션은 기존 반도체 공정의 유지보수 및 신기술 개발에 매우 중요합니다. 가상의 제조 공정을 통해서 현실의 반도체 공정을 구현할 수 있습니다. 공정의 변화를 명확하게 반영할 수 있습니다; 즉, 소자 성능을 극대화하고 제조 수율을 높이는 동시에 엔지니어링 주기와 시간을 최소화합니다.
분석적 주입 모드
Monte-Carlo (MC) 주입 모드
프리젠테이션
DTCO Tool Flow – Single Run-Time Environment for Design Technology Co-Optimization
Optical Simulations – Light Emitting and Absorbing Devices
Power Device Solutions – Full TCAD to SPICE Flow
Parasitic Extraction – Full Chip and Cell Level RC Extraction
Process Simulation Options – Four Ways to Create a Physical Structure
브로셔
Victory Process – Process Simulation
Victory Mesh – Meshing and Solid Modeling
Victory Device – Device Simulation
Victory Device – Simulation Modules
Victory Atomistic – Nanostructure Simulation
Victory RCx Pro – RC Extractor for Realistic 3D Structures
Victory DoE – Design of Experiments
관련 논문
Simulation Standard Technical Journal
웨비나
SURGE 2025: NanoHub Workforce Development
SURGE 2025: Low-temperature Behavior in Nanowire Transistors by Quantum Transport Simulation
SURGE 2025: Machine Learning for Multi-Scale Plasma Process Integration and Optimization
SURGE 2025: How to Utilize Victory Analytics and Machine Learning to Calibrate TCAD Data
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A New CMOS Simulation Template: Addressing Advanced Diffusion and Annealing Effects
Introduction to Virtual Metrology with Victory Extract
IGBT Switching Simulation Based on the Double-Pulse Method
2024 TCAD Baseline Release