TCAD 소자 시뮬레이션은 차세대 반도체 소자를 개발하는 핵심으로서, 복잡한 물리 현상에 대한 통찰력을 제공합니다. Victory Device는 물리학에 기초한 소자 시뮬레이션을 실행하여, 소자의 성능을 예측하고 이해할 수 있습니다.
프리젠테이션
DTCO Tool Flow – Single Run-Time Environment for Design Technology Co-Optimization
Optical Simulations – Light Emitting and Absorbing Devices
Power Device Solutions – Full TCAD to SPICE Flow
Parasitic Extraction – Full Chip and Cell Level RC Extraction
Process Simulation Options – Four Ways to Create a Physical Structure
브로셔
Victory Process – Process Simulation
Victory Mesh – Meshing and Solid Modeling
Victory Device – Device Simulation
Victory Device – Simulation Modules
Victory Atomistic – Nanostructure Simulation
Victory RCx Pro – RC Extractor for Realistic 3D Structures
Victory DoE – Design of Experiments
관련 논문
Simulation Standard Technical Journal
웨비나
SURGE 2025: NanoHub Workforce Development
SURGE 2025: Low-temperature Behavior in Nanowire Transistors by Quantum Transport Simulation
SURGE 2025: Machine Learning for Multi-Scale Plasma Process Integration and Optimization
SURGE 2025: How to Utilize Victory Analytics and Machine Learning to Calibrate TCAD Data
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A New CMOS Simulation Template: Addressing Advanced Diffusion and Annealing Effects
Introduction to Virtual Metrology with Victory Extract
IGBT Switching Simulation Based on the Double-Pulse Method
2024 TCAD Baseline Release