Writing an Impurity Activation Model with the Open Model Library

Accuracy of Impurity Activation is essential in correctly modeling and simulating Silicon Carbide devices. For high concentrations of dopants, it is well known that less than 100% of dopants will be electrically active. To address this effect, Silvaco Victory Process models dopant activation in Silicon Carbide in 3 ways.

  1. Built-in empirical and transient activation models specifically for Silicon Carbide [1, 2]
  2. User defined activation levels, via a tabular input, allowing users to input proprietary or experimental data [2]
  3. Customization of the diffusion and activation models via the Victory Process Open Model Library

For the purposes of this article, we will focus on the 3rd method. With the Open Model Library available in Victory Process (VP), users can write their own diffusion related and activation code while keeping  their process information proprietary. This “Hints and Tips” shows users how to implement custom activation models for multiple species in 4h-SiC. This example can also be applied more generally for any substrate material and/or impurity species.