Simulation Standard

Dry etching is commonly used in semiconductor processing to generate deep trenches with good anisotropy. Dry etching is applied to many semiconductor technologies including Advanced FinFETs, 3D NAND, and vertical

2020 TCAD Baseline Release Section 1: Process Simulation – New Features in 2020 Baseline Release

2020 TCAD Baseline Release Section 2: Meshing – New Features in 2020 Baseline Release

2020 TCAD Baseline Release Section 3: Device Simulation – New Features in 2020 Baseline Release

Silvaco TCAD has been used by Tier 1 power device manufactures and designers for decades. The introduction of Victory Process, Victory Mesh, and Victory Device significantly increases the functionality and

It is crucial for any kind of calculations that units are consistent between equations and modeling modules. Often different units are used in various experimental and theoretical fields. Therefore, we

Victory Mesh initially supported loading and remeshing of the saved status from Victory Process. Victory Mesh 1.5.0 onwards is now able to load and remesh individual structure files (.str files),

Diamond is considered to be the ultimate semiconductor material for high power and high frequency devices due to its superior electrical and thermal properties, such as high breakdown field, high

Abstract— A complete simulation flow for a Nanowire-based ring oscillator circuit is presented, where the active devices were simulated using an atomistic device simulator. The results of this simulation have

Abstract—There are several device challenges unique to the select gate transistor in 3D NAND memory cell. It requires low leakage current to prevent read and program disturb problems and it