This article focuses on the effects of process and modeling parameters on device electrical characteristics and uses the threshold voltage versus gate length of a n-MOSFET as an illustration.
작성자: Ingrid Schwarz
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엔트리 Ingrid Schwarz
Mixed-signal systems-on-a-chip (SOC) integration of digital, analog, RF, and power components is emerging to meet demands for low-power, highly integrated systems in portable computing, wireless communications, and multimedia.
FastBlaze is a fast physical device simulator for MESFETs and HEMTs optimized to provide interactive TCAD for modern III-V FET devices. It incorporates device-specific techniques to allow 1000x to 10000x simulation speeds compared to conventional device simulation.
Q. What is the typical method of measuring flicker noise using S3245A Noise Amplifier?
The importance of the MOS device SPICE model validation and the introduction of the validation routine in UTMOST III was presented in Simulation Standard article issued on September 1996. The recent developments and the practical applications for the “Validate” routine will be presented in this article.
A new feature has recently been added to UTMOST: the ability to convert UTMOST log files into a format suitable for viewing in TonyPlot. This new feature is controlled from the UTMOST Output Log File screen, and is compatible with all UTMOST plot types. The conversion process will also automatically produce the derivative data types associated with certain UTMOST routines (such as the mosfet module’s ALL_DC, or the bipolar module’s BF and BR).
In a previous article , the efficient use of the SmartSpice .MODIF statement for cell characterization was discussed. This article will focus on using advanced features of the SmartSpice scripting language to solve this problem in a more flexible manner.
Thin film transistors (TFTs) have an important application in the manufacture of active matrix LCD displays. As this technology has become more mature, a number of different models of both amorphous silicon (a-Si) and polysilicon TFTs have been proposed. Recently two new models developed by the Rensselaer Polytechnic Institute (RPI) have been implemented in the SmartSpice circuit simulator. These models are also now available in the TFT module of UTMOST III and this article will discuss the different model characteristics, and their use in both SmartSpice and UTMOST III.
The SmartSpice Interface to Cadence integrates the Analog Artist and Composer elements of the Cadence Design Framework II (DFII) with SmartSpice. This integration is accomplished, in versions 4.4.0 and later of DFII, through the Cadence Spice Socket (cdsSpice) and the OASIS interface in the Analog Artist and Composer components of DFII. Versions of DFII prior to 4.4.0 are also supported by SmartSpice, but these solutions rely on the older HSPICE Socket, and necessarily offer substantially less functionality than is provided by the current interface.
Ring oscillator circuits are a valuable test structure for determining the feasibility and success of an integrated circuit process fabrication sequence. One of the most useful results obtainable from a ring oscillator test structure is the delay time per gate.