The formation of deep p- and n- wells using high-energy implantation has become an integral part of CMOS technology process flow. The high energy and high dose implantation into the cleared area of a thick photoresist mask generates retrograde profiles. These profiles have a relatively high peak concentration usually at the depth of approximately 1 micron and a very low surface concentration. From the first glance this process achieves its primary goal to isolate NFETs from PFETs without affecting surface areas where the transistors are formed. Unfortunately for both technology and circuit designers, this relatively simple process step brings about an unwanted Well Proximity Effect (WPE) [1] exhibited by a strong dependence of threshold voltage Vt on transistor location and even orientation within the well.

The ion milling process is used extensively in the Hard Disc Drive industry, particularly in the manufacture of thin film magnetic heads. Ion milling is used to pattern many metal and dielectric materials including alloys comprising of Fe, Co and/or Ni transition metals which are commonly found in a thin film magnetic read-write transducers. This paper presents new results for ion milling and redeposition of gold on photoresist patterns at different milling angles and compared with 3D process simulation results.

This paper presents research efforts conducted at the IESUPM in the development of an accurate, physically-based solar cell model using the general-purpose ATLAS device simulator by Silvaco. Unlike solar cell models based on a combination of discrete electrical components, this novel model extracts the electrical characteristics of a solar cell based on virtual fabrication of its physical structure, allowing for direct manipulation of materials, dimensions, and dopings. As single junction solar cells simulation was yet achieved, the next step towards advanced simulations of multi-junction cells (MJC) is the simulation of the tunnel diodes, which interconnect the subcells in a monolithic MJC. The first results simulating a Dual-Junction (DJ) GaInP/GaAs solar cells are shown in this paper including a complete Tunnel Junction (TJ) model and the resonant cavity effect occurring in the bottom cell. Simulation and experimental results were compared in order to test the accuracy of the models employed.

A parameterized cell (P-Cell) is a cell with user-specified parameters. It is possible to create customized p-cell instances with different composition according to parameter values. Using P-Cells gives a considerable memory reduction in the case of multiple instancing of a cell.

The latest release of Layout versus Schematic tools from CELEBRITY CAD suite (Maverick full-chip parametric netlist extractor and Guardian hierarchical netlist comparator) delivers a number of significant advances. The engines of both tools were tuned up to achieve essential reduction of running time while processing huge designs.