High Voltage Power Devices using super junction or multi RESURF effect have a relatively high BV with a drastic reduction in the on-state resistance (Ron)[1-2]. Several Techniques such as buried multi-epitaxial growth[3], Super Trench Power MOSFET process[4], Vapor Phase Doping[5] and trench filling epitaxial Si growth[6], have been applied to formation of the high aspect ratio p/n column structures. In blocking mode, the adjacent N- and P- regions deplete into each other laterally. For this junction, the process simulation was considered with several implant ionization process steps[3]. The condition of exact charge balance is important in obtaining the stable high Breakdown Voltage (BV).