Solar cells manufactured from wafers of crystalline or polycrystalline silicon are today the dominant technology in the commercial market. Solar cells based on thin film semiconductor are another technology with great potential. One such technology is based on a compound of the elements copper, indium, gallium and selenium abbreviated Cu(in,Ga)Se2 or CIGS. Two advantages of this technology are the low material consumption and the high efficiency that has been demonstrated, which both make it economically competitive. The objective of this article is to simulate a CIGS Solar cell module taking into account electrical, optical and geometrical parameters in order to optimize his design.

SOI MOSFETs can exhibit a kink in their Id/Vd curves, which is caused by impact ionization, floating potentials, and other effects. One way of suppressing this kink effect is to supply the device with a body contact. With a body contact, however, the geometry of the device becomes fully three dimensional. In this paper, we show how an SOI MOSFET with a body contact can be simulated in VICTORY DEVICE. 3D visualizations from the VICTORY DEVICE results illustrate how the body contact acts to suppress the kink effect.

In modern semiconductor devices, the effects of physical lattice strain are playing an increasingly important role. One reason for this is that as device dimensions have shrunk, strains due to lattice mismatch or differences in thermal expansion have become more prevalent. Another is that strain has become an important tool in modifying and enhancing the electrical properties of the semiconductor materials [1]. Large strain induced gains in both electron and hole mobilities have been reported [2][3]. In this article, we will show how SILVACO tools can be used to simulate the creation of a 3D FinFET using VICTORY CELL, calculate the internal strains using VICTORY STRESS, and analyze its electrical characteristics using VICTORY DEVICE.

High Voltage Power Devices using super junction or multi RESURF effect have a relatively high BV with a drastic reduction in the on-state resistance (Ron)[1-2]. Several Techniques such as buried multi-epitaxial growth[3], Super Trench Power MOSFET process[4], Vapor Phase Doping[5] and trench filling epitaxial Si growth[6], have been applied to formation of the high aspect ratio p/n column structures. In blocking mode, the adjacent N- and P- regions deplete into each other laterally. For this junction, the process simulation was considered with several implant ionization process steps[3]. The condition of exact charge balance is important in obtaining the stable high Breakdown Voltage (BV).