엔트리 Ingrid Schwarz

Simulation of Device Degradation Due to Bias Temperature Stress

7월 1, 2016카테고리: /작성자:

Introduction Bias Temperature Instability (BTI) [1] ranks among the most serious reliability issues in present-day semiconductor devices. In pMOSFETs, for instance, it is observed when large negative biases are applied to the gate at elevated temperatures. These operation conditions cause a shift of the threshold voltage, resulting in an unwanted change of the device characteristics. With the continuous miniaturization of MOS devices, this phenomenon has become increasingly pronounced and has reached a level, at which it can even lead to device failure in the worst case.

Using Victory Process to Create Realistic Structures for Capacitance Extraction in Clever

7월 1, 2016카테고리: /작성자:

Silvaco offers many alternatives for creating simple 3D structures, the optimum choice depending on what the user needs to simulate. Many of the choices for creating simple 3D structures are for user convenience, so that just a single tool can both create the simple 3D structure and simulate the required physics. This gives the user an enhanced feeling of a tightly integrated product.

Hints, Tips and Solutions – Scattering mechanisms contributing to reduced channel mobility in 4H-SiC MOSFETs

7월 1, 2016카테고리: /작성자:

In a MOSFET structure, silicon carbide, 4H-SiC in particular, is known to exhibit lower channel mobility than Si, mainly due to Coulomb scattering at trapped charge at the SiO2/4H-SiC interface, where a high interface trap density exists. Atlas provides an alternative inversion layer mobility model specifically intended for 4H-SiC. The model enabled by specifying the ALTCVT.N parameter for electrons or the ALTCVT.P parameter for holes on the MOBILITY statement takes into account four scattering mechanisms. These comprise the ionized impurity scattering in the bulk semiconductor, the surface roughness scattering, the acoustic surface phonon scattering, and the Coulomb scattering at trapped charge at the SiO2/4H-SiC interface. Using Matthiessen’s rule, the ALTCVT.N and ALTCVT.P model combines four mobility components related to their respective carrier scattering to form the total inversion layer mobility in 4H-SiC.