엔트리 Ingrid Schwarz

Hints, Tips and Solutions – Adding Random Noise to Mask Layout

4월 1, 2018카테고리: /작성자:

Geometrical module of Victory Process allows the fast and accurate transfer of mask patterns to the structure. However, sometimes it is necessary to emulate the imperfections of physical processes while retaining the speed and accuracy of the geometrical approximation. For example, you may want to test the tolerance of the final device to random fluctuations in structure’s geometry.

VarMan에 의한 스탠더드 셀 통계 특성화

2월 28, 2018카테고리: /작성자:

2018년 3월 1일 | 3:00am-3:30am (한국 시각)
VarMan은 Fast Monte Carlo, Variability eXplorer, 하이-시그마 Yield Estimation, 하이-시그마 Performance Limit, Library VarMan 등을 포함합니다. 높은 정확성을 유지하면서도 스탠더드 셀 라이브러리 특성화와 품질 보증에 필요한 시뮬레이션 횟수를 크게 줄여, 변동성이 존재하는 상태에서 설계와 특성화를 구현합니다.

Advanced Process and Device 3D TCAD Simulation of Split-Gate Trench UMOSFET

1월 1, 2018카테고리: /작성자:

Lower conduction loss and fast switching characteristics for power devices are increasingly required in the more and more energy-conscious world. For the low to medium voltage ranges (12 V ~ 250 V), the split gate structures [1] have become prevalent in the power MOSFET technologies [2-4]. They allow to achieve the best trade-off between the breakdown voltage (BV) and specific on-state resistance (RSP) for the vertical discrete power MOSFETs. Most of these solutions are based on the RESURF (Reduced Surface Field) action of Split-Gate Resurf Stepped Oxide (SG-RSO) along the drift region.

Using TCAD to Reverse Engineer a 2N2222 BJT for Proton Damage Simulations

1월 1, 2018카테고리: /작성자:

It is often the case, that an Engineer is required to simulate environmental effects on a device manufactured by a third party.  In such an event, the first issue that is faced by the Engineer, is a lack of access to the manufacturing process that created the third party device in the first place.  In this article, it is shown how to overcome this first issue, and reverse engineer a sufficiently representative base device, simply from the manufacturer’s specification sheet.  Once a satisfactory device has been fabricated, it can be used in the required simulation to analyze any effects of interest.  In this particular case, we will demonstrate the damaging effects of irradiating a 2N2222A bipolar transistor with a proton flux and compare the simulated results with other similar measured results.

Optimization of PD-SOI CMOS Process and Devices for RF Applications

1월 1, 2018카테고리: /작성자:

In recent years, radio-frequency (RF) CMOS on Silicon-on-Insulator (SOI) has rapidly evolved as a mainstream technology for switches used in wireless applications such as tuners and power amplifiers [1, 2]. Since such applications can involve switching high power levels at high frequencies (~2 GHz), the technology considerations are substantially different than those for SOI used in high speed, small signal applications such as microprocessors. Requirements of lower insertion loss, better isolation, and better linearity have driven RF CMOS-SOI roadmap.