In a Research & Development environment, Technology Computer Aided Design (TCAD) is involved in the device optimization loop and requires efficient and predictive implantation modeling with frequent updating of the

Yes. ATLAS now supports a wide range of materials in its database. This database covers single element conductors, binary compounds and quaternary compounds. A complete list of all materials can

In this paper, I have used the same technique to model uni-directional HV MOS devices as previously reported for bi-directional HV MOS devices [4] -[5] while adopting a new parameter

RF MOSFET Small - Signal Model and Parameters Small-signal equivalent circuit of MOSFET after de-embedding parasitics is shown in Figure 1 and small-signal model parameters are listed in Table 1.

SOI technology appears now to have become an advantageous, viable option for low-voltage and high-performance CMOS integrated circuits in digital, analog, and mixed-signal applications. The thin-film nature of the SOI