Predictive and efficient lithography simulation is an important component of the semiconductor industry efforts to develop the next generation of deep submicron technologies. Emerging technologies are based on elements with very small feature sizes and extremely complex and nonplanar topographies. Therefore lithography processing has to provide high resolution with large depth of focus. Simultaneously such effects as nonplanar reflections and notching as well as refractive index dependence on local absorbed dose are very critical for printing small mask elements using short wavelength radiation. This work presents a new approach for simulating the exposure process, which takes into account these effects in complex nonplanar resist-substrate structures.

 Yes. ATLAS now supports a wide range of materials in its database. This database covers single element conductors, binary compounds and quaternary compounds. A complete list of all materials can be found in Appendix B of the ATLAS Users Manual Vol. II.

RF MOSFET Small – Signal Model and Parameters
Small-signal equivalent circuit of MOSFET after de-embedding parasitics is shown in Figure 1 and small-signal model parameters are listed in Table 1.
Parameter extraction is performed from real and imaginary parts of the Y-parameters. Each parameter is extracted from the Y-parameter equations which contain frequency terms.