GaN HEMT 이해를 위한 소자 시뮬레이션 활용 방법
2022년 2월 25일 | 3:00am-3:30am (한국 시각)
소자 시뮬레이션에서 RF와 전력 소자에서 성능을 제한하는 복잡한 소자의 불안정성을 어떻게 나타내는지 구체적인 사례를 들어 설명합니다.
저자는 아직 경력을 작성하지 않았습니다.
하지만, Gigi Boss 씨는 무려 430 항목에 기여한 것을 자랑스럽게 생각합니다.
2022년 2월 25일 | 3:00am-3:30am (한국 시각)
소자 시뮬레이션에서 RF와 전력 소자에서 성능을 제한하는 복잡한 소자의 불안정성을 어떻게 나타내는지 구체적인 사례를 들어 설명합니다.
2022년 2월 11일 | 3:00am-3:30am (한국 시각)
FinFET 스탠더드 셀 레이아웃 설계에서 가장 어려운 과제 중 몇 가지를 살펴보고, 실바코의 Cello를 활용하여 문제점을 해결하는 방법에 대해 소개합니다.
2022년 2월 18일 | 3:00am-3:30am (한국 시각)
아날로그, 디지털 및 혼합 신호 IC의 물리적 검증을 수행하는 SmartDRC/LVS를 소개합니다.
Introduction
Super-junction based devices are a key enabling technology for power devices. Adjacent columns of p and n-type doped material with optimized doping levels enables box-like electric fields, maximizing the breakdown voltage. As the doping of the columns is comparatively high, the on-state losses can be minimized.
Fabrication of such structures in SiC can be particularly challenging. Ideally the p and n-type columns will be uniformly doped. Fluctuations in doping can cause local electric field variation causing the breakdown voltage to be less than ideal. Super-junction structures can be conceived in a number of ways, but current schemes all present challenges [1] in SiC. The simplest method, as used with silicon is to use multiple implants and epitaxy steps. This is quite impractical with SiC due to the low diffusivity of dopants, requiring many sequential implantation steps. Trench etch and refill is an alternative scheme but provides its own challenges with regards to charge control and quality of the trench re-fill.
2022년 1월 28일 | 3:00am-3:30am (한국 시각)
Victory Mesh의 등각 메쉬 (반구조화 직교 기반 샘플링), 들로네 메쉬 (비구조화 샘플링) 및 그 세부 기능에 대해 소개합니다.
2021년 12월 12일
Abstract— Silvaco TCAD simulations are employed to identify relevant current carrying mechanisms in amorphous selenium (a-Se) based detectors, using parameters obtained from experimental data, density functional theory calculations, and in-house bulk Monte Carlo simulations. The steady-state dark current behaviors in various a-Se detectors are analyzed by identifying all relevant current conduction mechanisms (e.g., space-charge limited current, bulk thermal generation, Schottky emission, Poole-Frenkel activated mobility and hopping conduction), as well as “acceptor” and “donor” defect density of states located in the forbidden band gap of a-Se. The theoretical models are validated by comparing them with experimental steady-state dark current densities in avalanche and non-avalanche a-Se detectors.
Location: Seattle/Bellevue, WA – Boston, MA – Phoenix/San Diego, CA
As a Strategic Account Manager at Silvaco, you will be responsible for generating new business for our full line of EDA, TCAD, and IP products.
Abstract— A Singular Point Source MOS (S-MOS) cell concept suitable for power MOS based devices is presented. The S-MOS differs from a standard Planar or Trench MOS cell in the manner by which the total channel width per device area is devised. The S-MOS single cell channel width is defined as the peripheral length of a line running approximately along the N++ source and P channel junction which is positioned on a gated trench side-wall. The length of the line is established from a singular point implant source for forming the N++ source region which geometrically corresponds to the shape of the N++/P junction. The N++ and PChannel profiles achieved are similar to those for a planar cell, but for the S-MOS, they are situated on a trench side-wall. The total device channel width will therefore depend on the total number of gated trench side-walls per chip. The S-MOS provides a unique approach for MOS cell layout designs and is applicable to different MOS based power devices. In this paper, the S-MOS is implemented on a 1200V IGBT by means of 3D-TCAD simulations while providing results highlighting the potential advantages with respect to the device static and dynamic performance.
Keywords – MOS cell, Insulated gate bipolar transistors.
Abstract—During the last few years, oxide-based ReRAM technology has attracted intense industrial and scientific research interest. Therefore, we have performed an in-depth computational study with a focus on data retention besides the resistive switching and the current run-away. Our newly developed comprehensive TCAD (Technology Computer Aided Design) model provides deep insight into the underlying microscopic processes and is validated against experimental data as an accurate and predictive simulation tool.
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