Abstract—During the last few years, oxide-based ReRAM technology has attracted intense industrial and scientific research interest. Therefore, we have performed an in-depth computational study with a focus on data retention besides the resistive switching and the current run-away. Our newly developed comprehensive TCAD (Technology Computer Aided Design) model provides deep insight into the underlying microscopic processes and is validated against experimental data as an accurate and predictive simulation tool.

New Features in 2021 Baseline Release:

1. Section 1: Process Simulation
2. Section 2: Device Simulation
3. Section 3: Victory Mesh
4. Section 4: Parasitic Extraction