III-Nitrides have recently attracted attention as a promising material class for high-power, high-frequency microelectronic applications at elevated temperatures. They possess large band gaps, relatively small effective masses in the conduction band minimum, large offsets to the conduction band satellite valleys, and high polar optical phonon frequencies. The large band gaps provide high-breakdown field strengths, while the other basic physical properties result in high low-field mobilities and high saturation velocities.

To illustrate the use of this statement to find depletion widths we have used the standard MOSFET example mos1ex01.in to first create the structure. Then the drain voltage was swept to 5V and a structure was saved at this bias. Figure 1 shows this structure and has plottted the junction and the depletion edges.

Introduction

In response to high demand, device designers are developing silica microlenslets that offer efficient coupling between optical fiber bundles and arrays of photodetectors, LEDs, or VCSELs. Microlenslet design involves precise control of the surface curvature in order to place the focus in the optimal region.

In all previous versions of SmartSpice the model code (BSIM, diode etc.) was included in the one executable (SmartSpice ). This means any updates to the model code would take a while to reach the customer because of the full SPICE functionality checks required before releasing a new SmartSpice version.

Stress effect models are now implemented in major models such as BSIM4 or HiSIM. The need for evermore accurate models with a strong relation to technology is accute. Since BSIM3v3 is still a widely-used model and has not been totally replaced by its successor, an improvement was made to the model in SmartSpice to fulfill customers need for stress effect equations.