엔트리 Erick Castellon

A Sophisticated Verilog-A Debugger

10월 1, 2004카테고리: /작성자:

During the elaboration of a Verilog-A model, debugging a module can be very useful for detecting non-physical behavior or fine-tuning the model. The SILVACO Verilog-A debugger has been designed to meet these needs. It is available since version 2.6.0.R of SmartSpice and works along with SILVACO C-Interpreter. It allows iteration-per-iteration Verilog-A modules debugging. The debugger is tracing all the Verilog-A instantiations of the design, either instances of the SmartSpice netlist or in other Verilog-A modules.

Hipex-CRC Parasitic RC-Network Reducer

9월 1, 2004카테고리: /작성자:

Design of large scale chips requires precise knowledge of interconnect delays. However, detailed analysis of interconnects may quickly become computationally too expensive due to the distributed nature of the networks, and the large number of internal nodes extracted.

Generic Devices – The New HIPEX-NET Feature for Extraction of Custom Devices

9월 1, 2004카테고리: /작성자:

Hipex-NET is SILVACO’s powerfull hierarchical layout netlist extractor. Built-in extracting rules permit to make fast and accurate parameter extraction for basic set of devices as MOS, BJT, diode, capacitor and resistor. But these rules can’t descibe all devices features and parameters that appeare in new submicron or RF layout designs. To resolve this problem the new HIPEX-NET command HIPEX GENERIC_DEVICE has been introduced. This new HIPEX-NET feature gives to user the capability to extract not only additional parameters for standard devices but also custom defined devices with arbitrary set of parameters. This article describes the new HIPEX-NET command.

Electrostatic Effect of Localized Charge in Dual Bit Memory Cells with DiscreteTraps

8월 1, 2004카테고리: /작성자:

In this paper the electrostatic impact of Channel Hot Electron (CHE) injection in discrete-trap memories is quantitatively addressed. The dual bit behavior of the transfer characteristic during forward and reverse read of a written cell is thoroughly analysed with the help of an analytical model. Such model allows, for the first time, to estimate the effective charged portion of the discrete storage layer, L2, and the quantity of electrons, Q, injected in the trapping