{"id":29873,"date":"2020-02-26T18:31:58","date_gmt":"2020-02-26T18:31:58","guid":{"rendered":"https:\/\/silvaco.com\/uncategorized\/radiation-seu-and-reliability\/"},"modified":"2021-08-04T22:25:13","modified_gmt":"2021-08-05T05:25:13","slug":"radiation-seu-and-reliability","status":"publish","type":"post","link":"https:\/\/silvaco.com\/ja\/published-papers\/radiation-seu-and-reliability\/","title":{"rendered":"Radiation, SEU and Reliability"},"content":{"rendered":"
\n

Radiation, SEU and Reliability<\/h1>\n

The full text for most of these papers may be found at the IEEE website at\u00a0www.ieee.org<\/a>.<\/p>\n

Takashi Kameshima, Shun Ono, Togo Kudo, Kyosuke Ozaki, Yoichi Kirihara, Kazuo Kobayashi, Yuichi Inubushi, Makina Yabashi, Toshio Horigome,Andrew Holland, Karen Holland, David Burt, Hajime Murao and Takaki Hatsui,
\n“Development of an X-ray pixel detector with multi-port charge-coupleddevice for X-ray free-electron laser experiments<\/a>“,
\nRev. Sci. Instrum. 85, 033110 (2014).<\/p>\n

Miin-Horng Juang, Jim Yu, C.C. Hwang, D.C. Shye, J.L. Wang,
\n“Trench MOS barrier Schottky rectifier formed by counter-doping trench-bottom implantation”,
\nMicroelectronics Reliability, In Press, Corrected Proof, Available online 19 September 2010.<\/p>\n

Saeed Mohammadi, Ali Afzali-Kusha,
\n“Modeling of drain current, capacitance and transconductance in thin film undoped symmetric DG MOSFETs including quantum effects”,
\nMicroelectronics Reliability, Vol. 50, Issue 3, March 2010, pp. 338-345.<\/p>\n

Feng Zhao, Mohammad M. Islam, Biplob K. Daas, Tangali S. Sudarshan,
\n“Effect of crystallographic dislocations on the reverse performance of 4H-SiC p\u2013n diodes”,
\nMaterials Letters, Vol. 64, Issue 3, 15 February 2010, pp. 281-283.<\/p>\n

Ying Wang, Hai-fan Hu, Chao Cheng,
\n“Simulation study of semi-superjunction power MOSFET with SiGe pillar”,
\nSuperlattices and Microstructures, Vol. 47, Issue 2, February 2010, pp. 314-324.<\/p>\n

M.C. Tu, Y.C. Wang, H.Y. Ueng,
\n“Linearity optimizing on HBT power amplifier design”,
\nMicroelectronics Journal, Vol. 40, Issue 12, December 2009, pp. 1714-1718.<\/p>\n

A. Alaeddine, M. Kadi, K. Daoud, B. Mazari,
\n“Effects of electromagnetic near-field stress on SiGe HBT\u2019s reliability”,
\nMicroelectronics Reliability, Vol. 49, Issues 9-11, September-November 2009, pp. 1029-1032.<\/p>\n

Chi-Woo Lee, Isabelle Ferain, Aryan Afzalian, Ran Yan, Nima Dehdashti, Pedram Razavi, Jean-Pierre Colinge, Jong Tae Park,
\n“NBTI and hot-carrier effects in accumulation-mode Pi-gate pMOSFETs”,
\nMicroelectronics Reliability, Vol. 49, Issues 9-11, September-November 2009, pp. 1044-1047.<\/p>\n

Seabroke, G. M., Holland, A. D., Burt, D., Robbins, M. S.,
\n“Modelling electron distributions within ESA’s Gaia satellite CCD pixels to mitigate radiation damage”
\nin Astronomical and Space Optical Systems, edited by Penny Warren, Cheryl Marshall, Proceedings of SPIE Vol. 7439 (SPIE, Bellingham, WA 2009) 743905<\/p>\n

Weatherford, T., Wang, Y., & Tracy, S.,
\n“TCAD analysis of self heating in AlGaN\/GaN HEMTs under pulsed conditions”
\nIEEE Integrated Reliability Workshop 2009<\/p>\n

Ciezki J., Vineyard G., & Weatherford T.,
\n“The investigation of the electro-thermal characteristics of a GTO thyristor at turn off using Silvaco ATLAS”
\nIEEE Integrated Reliability Workshop 2009<\/p>\n

Weatherford, T., Wang, Y., & Tracy, S.,
\n“Self heating of AlGaN\/GaN HEMTs in pulsed operation”
\nReliability Of Compound Semiconductors Workshop 2009<\/p>\n

K. Romanjek, E. Augendre, W. Van Den Daele, B. Grandchamp, L. Sanchez, C. Le Royer, J.-M. Hartmann, B. Ghyselen, E. Guiot, K. Bourdelle, S. Cristoloveanu, F. Boulanger, L. Clavelier,
\n“Improved GeOI substrates for pMOSFET off-state leakage control”,
\nMicroelectronic Engineering, Vol. 86, Issues 7-9, July-September 2009, pp. 1585-1588<\/p>\n

H. Wong, Y. Fu, J.J. Liou, Y. Yue,
\n“Hot-carrier reliability and breakdown characteristics of multi-finger RF MOS transistors”,
\nMicroelectronics Reliability, Vol. 49, Issue 1, January 2009, pp. 13-16.<\/p>\n

Xiang Liu, Jiann S. Yuan, Juin J. Liou,
\n“InGaP\/GaAs heterojunction bipolar transistor and RF power amplifier reliability”,
\nMicroelectronics Reliability, Vol. 48, Issues 8-9, August-September 2008, pp. 1212-1215.<\/p>\n

M. A. Belaid, K. Ketata,
\n“Hot-carrier effects on power RF LDMOS device reliability”,
\n2008 14th International Workshop on Thermal Investigation of ICs and Systems, pp. 123-7, 2008.<\/p>\n

M. Gares, M. A. Belaid, H. Maanane, M. Masmoudi, J. Marcon, K. Mourgues, P. Eudeline,
\n“Study of hot-carrier effects on power RF LDMOS device reliability”,
\nMicroelectronics Reliability, Vol. 47, No. 9-11, Sept. – Nov. 2007, pp. 1394-1399.<\/p>\n

F. Schwierz and C. Schippel,
\n“Performance trends of Si-based RF transistors”
\nMicroelectronics Reliability, Vol. 47, Issues 2-3, February-March 2007, pp. 384-390.<\/p>\n

Harsupreet Kaur, Sneha Kabra, Simrata Bindra, Subhasis Haldar and R.S. Gupta,
\n“Impact of graded channel (GC) design in fully depleted cylindrical\/surrounding gate MOSFET (FD CGT\/SGT) for improved short channel immunity and hot carrier reliability”,
\nSolid-State Electronics, Vol. 51, Issue 3, March 2007, pp. 398-404.<\/p>\n

Haddou Elghazi, Anouar Jorio and Izedine Zorkani,
\n“Analysis of temperature and 1 MeV proton irradiation effects on the light emission in bulk silicon (npn) emitter-base bipolar junctions”,
\nOptics Communications, Vol. 280, Issue 2, 15 December 2007, pp. 278-284.<\/p>\n

J. -P. Raskin,
\n“Wideband characterization and simulation of advanced MOS devices for RF applications”,
\nGallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005. 3-4 Oct. 2005, pp. 109 – 112.<\/p>\n

P. E. Dodd,
\n“Physics-based simulation of single-event effects”
\nIEEE Transactions on Device and Materials Reliability, Vol. 5, Issue 3, September 2005, pp. 343<\/p>\n

J. Urresti, S. Hidalgo, D. Flores, J. Roig, I. Cort\u00e9s, J. Rebollo,
\n“Lateral punch-through TVS devices for on-chip protection in low-voltage applications”
\nMicroelectronics Reliability, Vol. 45, Issue 7-8, July 2005, pp. 1181-1186.<\/p>\n

I. Cort\u00e9s, J. Roig, D. Flores, J. Urresti, S. Hidalgo and J. Rebollo,
\n“Analysis of hot-carrier degradation in a SOI LDMOS transistor with a steep retrograde drift doping profile”
\nMicroelectronics Reliability, Vol. 45, Issue 3-4, March 2005, pp. 493-498<\/p>\n

P. Cova, R. Menozzi, M. Portesine, M. Bianconi, E. Gombia, R. Mosca,
\n“Experimental and numerical study of H+ irradiated p-i-n diodes for snubberless applications”
\nSolid-State Electronics, Vol. 49, Issue 2, February 2005, pp. 183-191<\/p>\n

P. C. Adell, R. D. Schrimpf, C. R. Cirba, W. T. Holman, X. Zhu, H. J. Barnaby, O. Mion,
\n“Single event transient effects in a voltage reference”
\nMicroelectronics Reliability, Vol. 45, Issue 2, February 2005, pp. 355-359<\/p>\n

A. Gehring and S. Selberherr,
\n“Modeling of tunneling current and gate dielectric reliability for nonvolatile memory devices”
\nIEEE Transactions on Device and Materials Reliability, Vol. 4, Issue 3, September 2004, pp. 306<\/p>\n

H. V. Nguyen, C. Salm, B. H. Krabbenborg, J. Bisschop, A. J. T. Mouthaan, F. G. Kuper,
\n“Fast thermal cycling-enhanced electromigration in power metallization”
\nIEEE Transactions on Device and Materials Reliability, Vol. 4, Issue 2, June 2004, pp. 246-255<\/p>\n

K. Leinonen,
\n“Investigation of voltages and electric fields in silicon radiation detectors using a scanning electron microscope”
\nNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors<\/p>\n

M. Alwan, B. Beydoun, K. Ketata, M. Zoaeter,
\n“Two-dimensional simulation of the thermal stress effect on static and dynamic VDMOS characteristics”
\nMaterials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 124-125<\/p>\n

S. T. Liu, H. Y. Liu, D. Anthony, W. Heikkila, H. Hughes, A. Campbell, E. L. Petersen, P. J. McMarr,
\n“Proton-induced upset in SOI CMOS SRAMS”
\nIEEE Transactions on Nuclear Science, Vol. 51, Issue 6 II, December 2004, pp. 3475-3479<\/p>\n

A. Y. Kovalgin, J. Holleman, G. Iordache,
\n“A micro-scale hot-surface device based on non-radiative carrier recombination”
\n34th European Solid-State Device Research Conference, ESSDERC, 21-23 September 2004, Leuven, Belgium<\/p>\n

J. S. Kauppila, L. W. Massengill, W. Tim Holman, A. V. Kauppila, S. Sanathanamurthy,
\n“Single event simulation methodology for analog\/mixed signal design Hardening”
\nIEEE Transactions on Nuclear Science, Vol. 51, Issue 6 II, December 2004, pp. 3603-3608<\/p>\n

P. Hazdra, V. V. Komarnickij,
\n“Accurate Identification of Radiation Defect Profiles in Silicon after Irradiation with Protons and Alpha-Particles in the MeV Range”
\nDiffusion and Defect Data Pt.B: Solid State Phenomena, Vol. 95-96, 2004, pp. 387-392.<\/p>\n

H. Y. Liu, S. T. Liu, K. W. Golke, D. K. Nelson, W. W. Heikkila, W. C. Jenkins,
\n“Proton Induced Single Event Upset in a 4M SOI SRAM”
\nIEEE International SOI Conference, 2003, pp. 26-27<\/p>\n

F. Matsuoka and F. Masuoka,
\n“Numerical analysis of alpha-particle-induced soft errors in floating channel type surrounding gate transistor (FC-SGT) DRAM cell”
\nIEEE Transactions on Electron Devices, Vol. 50, Issue 7, 2003, pp. 1638-1644.<\/p>\n

P. Gouker, J. Burns, P. Wyatt, K. Warner, E. Austin, R. Milanowski,
\n“Substrate Removal and BOX Thinning Effects on Total Dose Response of FDSOI NMOSFET”
\nIEEE Transactions on Nuclear Science, Vol. 50, Issue 6 I, December 2003, pp. 1776-1783<\/p>\n

W. Chen, V. Pouget, H. J. Barnaby, J. D. Cressler, G. Niu, P. Fouillat, Y. Deval, D. Lewis,
\n“Investigation of Single-Event Transients in Voltage-Controlled Oscillators”
\nIEEE Transactions on Nuclear Science, Vol. 50, Issue 6 I, December 2003, pp. 2081-2087<\/p>\n

D. R. Ball, R. D. Schrimpf, H. J. Barnaby,
\n“Separation of ionization and displacement damage using gate-controlled lateral PNP bipolar transistors”
\nIEEE Transactions on Nuclear Science, Vol. 49 I, Issue 6, December 2002, pp. 3185-3190<\/p>\n

Y. Boulghassoul, L. W. Massengill, T. L. Turflinger, W. T. Holman,
\n“Frequency domain analysis of analog single-event transients in linear circuits”
\nNuclear Science, IEEE Transactions on, Vol.: 49 Issue: 6, Dec. 2002 pp. 3142 -3147<\/p>\n

P. Hazdra, K. Brand and J. Vobeck,
\n“Defect distribution in MeV proton irradiated silicon measured by high-voltage current transient spectroscopy”
\nNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and atoms 2002, Vol. 192, no3, pp. 291-300<\/p>\n

E. V. Monakhov, B. S. Avset, A. Hall,
\n“Radiation-induced electronic defect levels in high-resistivity Si detectors”
\nDiffusion and Defect Data Pt.B: Solid State Phenomena, Vol. 82-84, 2002, pp. 441-446<\/p>\n

R. Quintero, A. Cerdeira and A. Ort,
\n“Quasi-three-dimensional spice-based simulation of the transient behavior, including plasma spread, of thyristors and over-voltage protectors”
\nMicroelectronics Reliability, Vol. 42, January 2002, pp. 67-76<\/p>\n

F. Moscatelli, A. Santocchia, D. Passeri, G. M. Bilei, B. C. MacEvoy, G. Hall and P. Placidi,
\n“An enhanced approach to numerical modeling of heavily irradiated silicon devices”
\nNuclear Instruments and Methods in Physics Research Section B, Vol. 186, Issues 1-4, January 2002<\/p>\n

A. Sternberg, L. Massengill, R. Schrimpf, P. Calvel,
\n“Application Determinance of Single Event Transient Characteristics in the LM111 Comparator”
\nIEEE TNS, Dec. 2001<\/p>\n

R. K. Lawrence, D. E. Ioannou, W. C. Jenkins, S. T. Liu, S. T.,
\n“Gated-diode characterization of the back-channel interface on irradiated SOI wafers”
\nIEEE Transactions on Nuclear Science, Vol. 48, Issue 6 I, December 2001, pp. 2140-2145<\/p>\n

M. P. Pagey, R. D. Schrimpf, K. F. Galloway and et al.,
\n“A hydrogen-transport-based interface-trap-generation model for hot-carries reliability prediction”
\nIEEE Electron Device Letter, Vol. 22, Jun. 2001, pp. 290-292<\/p>\n

R. K. Lawrence, A. A. Salman, D. E. Ioannou, W. C. Jenkins, S. T. Liu,
\n“Modelling the gated-diode response of an irradiated SOI back-channel interface”
\nIEEE International SOI Conference, 2001, pp. 127-128<\/p>\n

S. Abedinpour, R. Burra, K. Shenai,
\n“Stress analysis of a full bridge ZVS DC-DC converter”
\nConference Record – IAS Annual Meeting (IEEE Industry Applications Society), Vol. 1, 2001<\/p>\n

H. J. Barnaby, R. D. Schrimpf, A. L. Sternberg, V. Berthe, C. R. Cirba, and R. L. Pease,
\n“Proton Radiation Response Mechanisms in Bipolar Analog Circuits”
\nIEEE Trans. Nuclear Science, accepted for 2001 publication<\/p>\n

Todd R. Weatherford and Peter K. Schiefelbein,
\n“SEE Analysis of Digital InP-Based HBT Circuits at Gigahertz Frequencies”
\nIEEE Trans. on Nuclear Sci., Vol. 48, No. 6, Dec. 2001, pp. 1980 – 1986<\/p>\n

A. Sternberg, L. Massengill, R. Schrimpf, Y. Boulghassoul, H. Barnaby, S. Buchner, R. Pease, J.,
\n“Effect of Amplifier Parameters on Single Event Transients in an Inverting Operational Amplifier”
\nHoward, presented at RADECS 2001<\/p>\n

I. Mart,
\n“Characterization, simulation and modeling of PLL under irradiation using HDL-A”
\n2000 IEEE\/ACM International Workshop on Behavioral Modeling and Simulation, 2000, pp. 57-61<\/p>\n

D. J. Fouts, G. R. McKerrow, G. K. Lum, S. S. Noe, A. S. Lambley,
\n“Second-layer polysilicon structures for gate end-around leakage-current compensation in bulk CMOS ICs”
\nMicroelectronics Reliability, Vol. 40, June 2000, pp. 955-963<\/p>\n

A. Maouad, A. Hoffmann, A. Khoury, J. -P. Charles,
\n“Characterization of high-density current stressed IGBTs and simulation with an adapted SPICE sub-circuit”
\nMicroelectronics Reliability, Vol. 40, June 2000, pp. 973-979<\/p>\n

O. Buiu, I. S. Al-Kofahi, S. Taylor and J. Ellis,
\n“Channel distribution of generated interface states in 0.35 um LDD nMOSFET”
\nMicroelectronics Reliability, Vol. 40, Issues 4-5, 1 April 2000, pp. 727-730<\/p>\n

Yun-Gueon Shin and Jong-Hwa Lee,
\n“A study of electrical characteristics and reliability on flash EEPROM cell”
\nProceedings of the 4th IEEE Korea-Russia International Symposium on Science and Tec<\/p>\n

Anil K. G., Pompl T., Eisele I,
\n“Impact of Gate Oxide Thickness Scaling on Hot-Carrier Degradation in Deep-sub-micron nMOSFETS”
\nProc. ESSDERC 2000, pp. 132-135<\/p>\n

Duane R., Concannon A., McCarthy D., Mathewson A.,
\n“Inverse Modelling of Trapped Charge in Hot-Carrier Stressed nMOSFET”
\nProc. ESSDERC 2000, pp. 368-371<\/p>\n

Mukundan S. K., Pagey M. P., Cirba C. R., Schrimpf R. D. and Galloway K. F.,
\n“TCAD based Simulation of Hot-Carrier Degradation in p-channel MOSFETs Using Silicon Energy-Balance and Oxide Carrier Transport”
\nJournal of Technology Computer Aided Design, 2000<\/p>\n

H. J. Barnaby, C. R. Cirba, S.L. Kosier, P. Fouillat, X. Montagner, R.D. Schrimpf,
\n“Modeling Ionizing Radiation Defect Generation in Bipolar Oxides with Gated Diodes”
\nIEEE Trans. Nuclear Science, 47, pp. 514-518, 2000<\/p>\n

H. J. Barnaby, C. R. Cirba, R. D. Schrimpf, D. M. Fleetwood, R. L. Pease, M. R. Shaneyfelt, T. Turflinger, J.F. Krieg, M. C. Maher,
\n“Origins of Total-Dose Response Variability in Linear Bipolar Microcircuits”
\nIEEE Trans. Nuclear Science, accepted for 2000 publication<\/p>\n

H. J. Barnaby, C. R. Cirba, R. D. Schrimpf, K. F. Galloway, M. Pagey, R. Milanowski,
\n“A Two Dimensional Engineering Model for Radiation-Induced Interface Trap Formation”
\nGOMAC 2000 Digest of Papers, pp. 613 – 616<\/p>\n

P. Hazdra, J. Rubes, J. Vobecky,
\n“Divacancy profiles in MeV helium irradiated silicon from reverse I-V measurement”
\nNuclear Instruments and Methods in Physics Research B, Vol. 159, December 1999, pp. 207-217.<\/p>\n

D. Bortoletto, G. Bolla, M. Guenther, G. P. Grim, R. L. Lander, S. Willard, Z. Li,
\n“Radiation damage studies of multi-guard ring p-type bulk diodes”
\nNuclear Instruments and Methods in Physics Research A, Vol. 435, October 1999, pp. 178-186<\/p>\n

G. Bolla, D. Bortoletto, G. P. Grim, R. L. Lander, Z. Li, S. Willard,
\n“First results on radiation damage studies using n+\/p\/p+ diodes fabricated with multi-guard ring structures”
\nNuclear Instruments and Methods in Physics Research A, Vol. 423, March 1999, pp. 290-296<\/p>\n

T. H. Prettyman,
\n“Theoritical framework for mapping pulse-shapes in semiconductor radiation detectors”
\nNuclear Instruments and Methods in Physics Research A428 (1999), pp. 72-80<\/p>\n

Mukundan, S. K., Pagey M. P., Schrimpf R. D., Galloway, K. F.,
\n“Simulation of hot-carrier degradation using self-consistent solution of semiconductor energy balance equations and oxide carrier transport equations”
\nIntegrated Reliability Workshop Final Report, 1999 IEEE International, 1999, pp. 92<\/p>\n

H. J. Barnaby, R. J. Milanowski, R. D. Schrimpf, L. W. Massengill, M. Pagey,
\n“Modeling Ionizing Radiation Effects in Lateral PNP BJT\u00b4s with Non-uniform Trapped Charge Distributions”
\nJournal of Radiation Effects Res. Engr., 17, pp. 75-84, 1999<\/p>\n

H. J. Barnaby, R. D. Schrimpf, J. Krieg, J. Titus, M. Gehlhausen, P. Cole, D. Emily, T. Turflinger, R. L. Pease, S.C. Witczak, M. C. Maher,
\n“Identification of Degradation Mechanisms in a Bipolar Linear Voltage Comparator Through Correlation of Transistor and Circuit Response”
\nIEEE Trans. Nuclear Science, 46, pp. 1666-1673, 1999<\/p>\n

H. J. Barnaby, C. R. Cirba, S. L. Kosier, P. Fouillat, X. Montagner, R. D. Schrimpf,
\n“Minimizing Gain Degradation in Lateral PNP BJTs Using Gate Control”
\nIEEE Trans. Nuclear Science, 46, pp. 1652-1659, 1999<\/p>\n

H. J. Barnaby, C. R. Cirba, Steve Kosier, P. Fouillat, X. Montagner, R. D. Schrimpf,
\n“Modeling Ionizing Radiation Defect Generation in Bipolar Oxides with Gated Diodes”
\nProceedings of the 1999 RADECS European Conference, pp C29-C31.<\/p>\n

R. J. Graves, C. R. Cirba, R. D. Schrimpf, R. J. Milanowski, A. Michez, D. M. Fleetwood, S. C. Witczak, and F. Saigne,
\n“Modeling low-dose-rate effects in irradiated bipolar-base oxides”
\nIEEE Transactions on Nuclear Science, 45(6 pt.1):2352 – 60, December 1998<\/p>\n

C. Leroux, P. Salome, G. Reimbold, D. Blachier, G. Guegan, M. Bonis,
\n“Building in reliability with latch-up, ESD and hot carrier effects on 0.25mm CMOS technology”
\nMicroelectronics Reliability, Vol. 38, October 1998, pp. 1547-1552.<\/p>\n

Z. Li, et al.,
\n“Simulation and design of various configurations of silicon detectors for high irradiation tolerance up to 6”
\nVol. 409, May 1998, pp. 180-183<\/p>\n

A. Tixier, V. Senez, B. Baccus, and et al.,
\n“Influence of the silicon nitride oxidation on the performances of NCLAD isolation”
\nMicroelectron. Reliab., Vol. 38, May 1998, pp. 795-805<\/p>\n

C. Leveugle, P. K. Hurley, A. Mathewson and et al.,
\n“Observation of high interface state densities at the silicon\/oxide interface for low doped polysilicon\/oxide\/silicon capacitor structures”
\nMicroelectron. Reliab., Vol. 38, Feb. 1998, pp. 233-237<\/p>\n

Milanowski, R. et al,
\n“TCAD-assisted Analysis of Back-Channel Leakage in Irradiated Mesa SOI nMOSFETs”
\nIEEE Transactions on Nuclear Science, Vol. 45, no. 6, pp. 2593-2599, Dec. 1998<\/p>\n

H. J. Barnaby, C. R. Cirba, R. D. Schrimpf, K.F. Galloway, M. Pagey, R. Milanowski,
\n“A Two Dimensional Engineering Model for Radiation-induced Interface Trap Formation”
\nGOMAC 1998 Digest of Papers, pp. 585 – 588<\/p>\n

H. J. Barnaby, R. D. Schrimpf, D. M. Fleetwood, S. L. Kosier,
\n“The Effects of Emitter-Tied Field Plates on Lateral PNP Ionizing radiation Response”
\nProceedings of the 1998 Bipolar\/BiCMOS Circuits Technology Meeting, pp. 35-38<\/p>\n

S. C. Williams, R. B. Hulfachor, K. W. Kim and et al.,
\n“Scaling trends for device performance and reliability in channel-engineered n-MOSFETs”
\nIEEE Trans. Electron. Devices, Vol. 45, Jan. 1998, pp. 254-260<\/p>\n

B. S. Avset,
\n“Measurements on a hole trap in neutron-irradiated silicon”
\nNuclear Instruments and Methods in Physics Research Section A, Vol. 388, April 19<\/p>\n

R. Salik, P. Ferrari, A. Chosson, and G. Angnieux,
\n“Electrical performance in time domain of subminiature interconnections on new thin films”
\nAdvanced Packaging Materials. Proceedings., 3rd International Symposium on Volume, Issue, 9-12 Mar 1997 pp. 143 – 146<\/p>\n

B. Flechet, R. Salik, J. W. Tao, and G. Angenieux,
\n“Microwave characterization of thin film materials for interconnections of advanced packaging”
\nProceeding of the 3rd IEEE International Symposium on Advanced Packaging Materials<\/p>\n

A. Denisenko, W. R. Fahrner, U. Strahle and et al.,
\n“Radiation response of P-I-P diodes on diamond substrates of various type: Electrical properties of semiconductor-insulator homojunctions”
\nIEEE Trans. Nuclear Science, Vol. 43, Dec. 1996, pp. 3081-3088<\/p>\n

J. S. Iwanczyk, B. E. Patt, J. Segal, J. Plummer, G. Vilkelis, B. Hedman, K. O. Hodgson, A. D. Cox, L. Rehn and J. Metz,
\n“Simulation and modelling of a new silicon X-ray drift detector design for synchrotron radiation applications”
\nNuclear Instruments and Methods in Physics Research Section A, Vol. 380, October 1996, pp. 288<\/p>\n

B. E. Patt, J. S. Iwanczyk, G. Vilkelis and Y. J. Wang,
\n“New gamma-ray detector structures for electron only charge carrier collection utilizing high-Z compound semiconductors”
\nNuclear Instruments and Methods in Physics Research Section A, Vol. 380, October 1996, pp. 276-2<\/p>\n

N. Keskitalo, A. Hall,
\n“Simulation of forward bias injection in proton irradiated silicon pn-junctions”
\nSolid-State Electronics, Vol. 39, July 1996, pp. 1087-1092.<\/p>\n

M. Allenspach1<\/sup>, I. Mouret1,2<\/sup>, J.L. Titus3<\/sup>, C.F. Wheatley, Jr.4<\/sup>\u00a0, R.L. Pease5<\/sup>, J.R. Brews1<\/sup>, R.D. Schrimpf1<\/sup>, and K.F. Galloway1<\/sup>
\n“Single-Event Gate-Rupture in Power MOSFETs:
\nPrediction of Breakdown Biases and Evaluation of Oxide Thickness Dependence\u00a0”<\/p>\n

    \n
  1. The University of Arizona, Tuscon, AZ 85721<\/li>\n
  2. Aerospatiale, Les Mureaux, France<\/li>\n
  3. Naval Surface Warfare Center – Crane, IN 47522<\/li>\n
  4. RR2 Box 1120, Drums, PA 18222<\/li>\n
  5. RLP Research, Inc., Albuquerque, NM 87122<\/li>\n<\/ol>\n

    \u00a9 1995 IEEE. Reprinted, with permission, from IEEE Transactions on Nuclear Science, Vol.42, December 1995.<\/p>\n

    S. C. Witczak et al.,
    \n“Synergetic Effects of Radiation stress and Hot-Carrier Stress on the Current Gain of NPN Bipolar Junction Transistor”
    \nIEEE Trans on Nuclear Science Dec 1994<\/p>\n

    Kosier, Combs, Wei, Schrimpf, Fleetwood, DeLaus, Pease,
    \n“Bounding the Total-Dose Response of Modern Bipolar Transistors”
    \nIEEE Trans. Nucl Sci. Dec, 1994<\/p>\n

    Wei, Kosier, Schrimpf,
    \n“Dose-rate Effects on Radiation-Induced Bipolar Junction Transistor Gain Degradation”
    \nApplied Physics Letters Oct 3, 1994<\/p>\n

    Wei, Kosier, Schimpf, Combs, DeLaus,
    \n“Excess Collector Current Due to an Oxide-Trapped-Charge-Induced Emitter in Irradiated NPN BJTs”
    \nIEEE Bip\/BICMOS Cicrs & Tech Mtg, Oct 1994<\/p>\n

    Kosier, Wei, Schrimpf, Fleetwood, DeLaus,
    \n“Physically-Based Comparison of Hot-Carrier-Induced & Ionizing-Radiation-Induced Degradation in BJTs”
    \nIEEE Trans. Elect Dev (to be pub. 1994)<\/p>\n<\/div><\/section><\/div>

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