{"id":29763,"date":"1998-05-04T16:16:42","date_gmt":"1998-05-04T16:16:42","guid":{"rendered":"https:\/\/silvaco.com\/uncategorized\/calibrating-reverse-short-channel-effects-in-mosfets\/"},"modified":"2026-10-15T14:45:48","modified_gmt":"2026-10-15T21:45:48","slug":"calibrating-reverse-short-channel-effects-in-mosfets","status":"publish","type":"post","link":"https:\/\/silvaco.com\/ja\/simulation-standard\/calibrating-reverse-short-channel-effects-in-mosfets\/","title":{"rendered":"Calibrating Reverse Short Channel Effects in MOSFETs"},"content":{"rendered":"<h1>Calibrating Reverse Short Channel Effects in MOSFETs<\/h1>\n<p class=\"feature\">Introduction<\/p>\n<p>This article focuses on the effects of process and modeling parameters on device electrical characteristics and uses the threshold voltage versus gate length of a n-MOSFET as an illustration. It has long been the adage of experienced TCAD users that the correct modeling of the process flow should represent approximately 90% of the effort, the remaining effort being directed towards electrical device modeling. In other words, if the process flow is correctly modeled, the basic electrical characteristics will be largely correct. This truism is based on the fact that device physics is well understood and most values required for device modeling are well known for silicon. These device modeling parameters are included as the default values in\u00a0<b>ATLAS<\/b>.<\/p>\n<p><img loading=\"lazy\" width=\"1210\" height=\"1669\" src=\"https:\/\/silvaco.com\/wp-content\/uploads\/simulationstandard\/simstd_may_1998_a4.jpg\" class=\"cleaned-enfold-image\" alt=\"\" decoding=\"async\" loading=\"lazy\" srcset=\"https:\/\/silvaco.com\/wp-content\/uploads\/simulationstandard\/simstd_may_1998_a4.jpg 1210w, https:\/\/silvaco.com\/wp-content\/uploads\/simulationstandard\/simstd_may_1998_a4-217x300.jpg 217w, https:\/\/silvaco.com\/wp-content\/uploads\/simulationstandard\/simstd_may_1998_a4-747x1030.jpg 747w, https:\/\/silvaco.com\/wp-content\/uploads\/simulationstandard\/simstd_may_1998_a4-768x1059.jpg 768w, https:\/\/silvaco.com\/wp-content\/uploads\/simulationstandard\/simstd_may_1998_a4-1114x1536.jpg 1114w, https:\/\/silvaco.com\/wp-content\/uploads\/simulationstandard\/simstd_may_1998_a4-1087x1500.jpg 1087w, https:\/\/silvaco.com\/wp-content\/uploads\/simulationstandard\/simstd_may_1998_a4-511x705.jpg 511w, https:\/\/silvaco.com\/wp-content\/uploads\/simulationstandard\/simstd_may_1998_a4-27x37.jpg 27w, https:\/\/silvaco.com\/wp-content\/uploads\/simulationstandard\/simstd_may_1998_a4-40x55.jpg 40w, https:\/\/silvaco.com\/wp-content\/uploads\/simulationstandard\/simstd_may_1998_a4-35x48.jpg 35w\" sizes=\"auto, (max-width: 1210px) 100vw, 1210px\" \/><\/p>\n<p><a href=\"https:\/\/silvaco.com\/dynamicweb\/jsp\/downloads\/DownloadDocStepsAction.do?req=download&#038;nm=simstd_may_1998_a4.pdf\" class=\"BGT-btn\" target=\"_blank\" rel=\"noopener noreferrer\">Download Simulation Standard<\/a><\/p>\n","protected":false},"excerpt":{"rendered":"<p>This article focuses on the effects of process and modeling parameters on device electrical characteristics and uses the threshold voltage versus gate length of a n-MOSFET as an illustration.<\/p>\n","protected":false},"author":12,"featured_media":22172,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"inline_featured_image":false,"footnotes":""},"categories":[7570],"tags":[],"class_list":["post-29763","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-simulation-standard","entry","has-media"],"yoast_head":"<!-- This site is optimized with the Yoast SEO Premium plugin v28.7 (Yoast SEO v28.7) - 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Silvaco","description":"This article focuses on the effects of process and modeling parameters on device electrical characteristics and uses the threshold","robots":{"index":"index","follow":"follow","max-snippet":"max-snippet:-1","max-image-preview":"max-image-preview:large","max-video-preview":"max-video-preview:-1"},"canonical":"https:\/\/silvaco.com\/ja\/simulation-standard\/calibrating-reverse-short-channel-effects-in-mosfets\/","og_locale":"ja_JP","og_type":"article","og_title":"Calibrating Reverse Short Channel Effects in MOSFETs","og_description":"This article focuses on the effects of process and modeling parameters on device electrical characteristics and uses the threshold","og_url":"https:\/\/silvaco.com\/ja\/simulation-standard\/calibrating-reverse-short-channel-effects-in-mosfets\/","og_site_name":"Silvaco","article_publisher":"https:\/\/www.facebook.com\/SilvacoSoftware\/","article_published_time":"1998-05-04T16:16:42+00:00","article_modified_time":"2026-10-15T21:45:48+00:00","og_image":[{"width":1210,"height":1669,"url":"https:\/\/silvaco.com\/wp-content\/uploads\/simulationstandard\/simstd_may_1998_a4.jpg","type":"image\/jpeg"}],"author":"Casey Molver","twitter_card":"summary_large_image","twitter_creator":"@SilvacoSoftware","twitter_site":"@SilvacoSoftware","twitter_misc":{"\u57f7\u7b46\u8005":"Casey Molver","\u63a8\u5b9a\u8aad\u307f\u53d6\u308a\u6642\u9593":"1 minute"},"schema":{"@context":"https:\/\/schema.org","@graph":[{"@type":"Article","@id":"https:\/\/silvaco.com\/ja\/simulation-standard\/calibrating-reverse-short-channel-effects-in-mosfets\/#article","isPartOf":{"@id":"https:\/\/silvaco.com\/ja\/simulation-standard\/calibrating-reverse-short-channel-effects-in-mosfets\/"},"author":{"name":"Casey Molver","@id":"https:\/\/silvaco.com\/ja\/#\/schema\/person\/2763eb741ca5ac04477fdff50ed84c80"},"headline":"Calibrating Reverse Short Channel Effects in MOSFETs","datePublished":"1998-05-04T16:16:42+00:00","dateModified":"2026-10-15T21:45:48+00:00","mainEntityOfPage":{"@id":"https:\/\/silvaco.com\/ja\/simulation-standard\/calibrating-reverse-short-channel-effects-in-mosfets\/"},"wordCount":135,"image":{"@id":"https:\/\/silvaco.com\/ja\/simulation-standard\/calibrating-reverse-short-channel-effects-in-mosfets\/#primaryimage"},"thumbnailUrl":"https:\/\/silvaco.com\/wp-content\/uploads\/simulationstandard\/simstd_may_1998_a4.jpg","articleSection":["Simulation Standard"],"inLanguage":"ja"},{"@type":"WebPage","@id":"https:\/\/silvaco.com\/ja\/simulation-standard\/calibrating-reverse-short-channel-effects-in-mosfets\/","url":"https:\/\/silvaco.com\/ja\/simulation-standard\/calibrating-reverse-short-channel-effects-in-mosfets\/","name":"Calibrating Reverse Short Channel Effects in MOSFETs - Silvaco","isPartOf":{"@id":"https:\/\/silvaco.com\/ja\/#website"},"primaryImageOfPage":{"@id":"https:\/\/silvaco.com\/ja\/simulation-standard\/calibrating-reverse-short-channel-effects-in-mosfets\/#primaryimage"},"image":{"@id":"https:\/\/silvaco.com\/ja\/simulation-standard\/calibrating-reverse-short-channel-effects-in-mosfets\/#primaryimage"},"thumbnailUrl":"https:\/\/silvaco.com\/wp-content\/uploads\/simulationstandard\/simstd_may_1998_a4.jpg","datePublished":"1998-05-04T16:16:42+00:00","dateModified":"2026-10-15T21:45:48+00:00","author":{"@id":"https:\/\/silvaco.com\/ja\/#\/schema\/person\/2763eb741ca5ac04477fdff50ed84c80"},"description":"This article focuses on the effects of process and modeling parameters on device electrical characteristics and uses the threshold","breadcrumb":{"@id":"https:\/\/silvaco.com\/ja\/simulation-standard\/calibrating-reverse-short-channel-effects-in-mosfets\/#breadcrumb"},"inLanguage":"ja","potentialAction":[{"@type":"ReadAction","target":["https:\/\/silvaco.com\/ja\/simulation-standard\/calibrating-reverse-short-channel-effects-in-mosfets\/"]}]},{"@type":"ImageObject","inLanguage":"ja","@id":"https:\/\/silvaco.com\/ja\/simulation-standard\/calibrating-reverse-short-channel-effects-in-mosfets\/#primaryimage","url":"https:\/\/silvaco.com\/wp-content\/uploads\/simulationstandard\/simstd_may_1998_a4.jpg","contentUrl":"https:\/\/silvaco.com\/wp-content\/uploads\/simulationstandard\/simstd_may_1998_a4.jpg","width":1210,"height":1669},{"@type":"BreadcrumbList","@id":"https:\/\/silvaco.com\/ja\/simulation-standard\/calibrating-reverse-short-channel-effects-in-mosfets\/#breadcrumb","itemListElement":[{"@type":"ListItem","position":1,"name":"Home","item":"https:\/\/silvaco.com\/zh-hans\/%e9%a6%96%e9%a1%b5\/"},{"@type":"ListItem","position":2,"name":"Calibrating Reverse Short Channel Effects in MOSFETs"}]},{"@type":"WebSite","@id":"https:\/\/silvaco.com\/ja\/#website","url":"https:\/\/silvaco.com\/ja\/","name":"Silvaco","description":"","potentialAction":[{"@type":"SearchAction","target":{"@type":"EntryPoint","urlTemplate":"https:\/\/silvaco.com\/ja\/?s={search_term_string}"},"query-input":{"@type":"PropertyValueSpecification","valueRequired":true,"valueName":"search_term_string"}}],"inLanguage":"ja"},{"@type":"Person","@id":"https:\/\/silvaco.com\/ja\/#\/schema\/person\/2763eb741ca5ac04477fdff50ed84c80","name":"Casey Molver","image":{"@type":"ImageObject","inLanguage":"ja","@id":"https:\/\/secure.gravatar.com\/avatar\/3dba2e48e0c4a977ea23fa75d38750a7763843df78307070478340a2517b8d6b?s=96&d=blank&r=g","url":"https:\/\/secure.gravatar.com\/avatar\/3dba2e48e0c4a977ea23fa75d38750a7763843df78307070478340a2517b8d6b?s=96&d=blank&r=g","contentUrl":"https:\/\/secure.gravatar.com\/avatar\/3dba2e48e0c4a977ea23fa75d38750a7763843df78307070478340a2517b8d6b?s=96&d=blank&r=g","caption":"Casey Molver"},"url":"https:\/\/silvaco.com\/ja\/author\/caseym\/"}]}},"_links":{"self":[{"href":"https:\/\/silvaco.com\/ja\/wp-json\/wp\/v2\/posts\/29763","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/silvaco.com\/ja\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/silvaco.com\/ja\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/silvaco.com\/ja\/wp-json\/wp\/v2\/users\/12"}],"replies":[{"embeddable":true,"href":"https:\/\/silvaco.com\/ja\/wp-json\/wp\/v2\/comments?post=29763"}],"version-history":[{"count":2,"href":"https:\/\/silvaco.com\/ja\/wp-json\/wp\/v2\/posts\/29763\/revisions"}],"predecessor-version":[{"id":956438,"href":"https:\/\/silvaco.com\/ja\/wp-json\/wp\/v2\/posts\/29763\/revisions\/956438"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/silvaco.com\/ja\/wp-json\/wp\/v2\/media\/22172"}],"wp:attachment":[{"href":"https:\/\/silvaco.com\/ja\/wp-json\/wp\/v2\/media?parent=29763"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/silvaco.com\/ja\/wp-json\/wp\/v2\/categories?post=29763"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/silvaco.com\/ja\/wp-json\/wp\/v2\/tags?post=29763"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}