{"id":29687,"date":"1999-02-02T16:50:27","date_gmt":"1999-02-02T16:50:27","guid":{"rendered":"https:\/\/silvaco.com\/uncategorized\/mixed-circuit-device-simulation-of-single-event-upset-in-a-memory-cell\/"},"modified":"2026-10-15T14:42:09","modified_gmt":"2026-10-15T21:42:09","slug":"mixed-circuit-device-simulation-of-single-event-upset-in-a-memory-cell","status":"publish","type":"post","link":"https:\/\/silvaco.com\/ja\/simulation-standard\/mixed-circuit-device-simulation-of-single-event-upset-in-a-memory-cell\/","title":{"rendered":"Mixed Circuit Device Simulation of Single Event Upset in a Memory Cell"},"content":{"rendered":"

Mixed Circuit Device Simulation of Single Event Upset in a Memory Cell<\/h1>\n

Introduction<\/span><\/p>\n

This article presents Single Event Upset (SEU) simulation of a SRAM cell using\u00a0MixedMode3D. MixedMode3D<\/b><\/i>\u00a0provides the capability to simultaneously perform circuit simulation coupled with three-dimensional device simulation. This allows one to examine the internal operation of a three-dimensional numerically simulated device and predict the response of the attached circuit in a self consistent manner.<\/p>\n

When an ionized particle interacts with a semiconductor, electron-hole pairs are generated along the path of the incident particle [1]. These generated electron-hole pairs can be transported through the semiconductor by drift and diffusion processes, which ultimately can affect transient device currents. Under certain biasing conditions the transient currents can alter the previously stored state of the circuit, causing an error in the data stored in the circuit. This phenomenon is generally referred to as Single Event Upset (SEU) [2].<\/p>\n

\"\"<\/p>\n

Download Simulation Standard<\/a><\/p>\n","protected":false},"excerpt":{"rendered":"

This article presents Single Event Upset (SEU) simulation of a SRAM cell using\u00a0MixedMode3D. MixedMode3D\u00a0provides the capability to simultaneously perform circuit simulation coupled with three-dimensional device simulation. This allows one to examine the internal operation of a three-dimensional numerically simulated device and predict the response of the attached circuit in a self consistent manner.<\/p>\n","protected":false},"author":12,"featured_media":21740,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"inline_featured_image":false,"footnotes":""},"categories":[7570],"tags":[],"class_list":["post-29687","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-simulation-standard","entry","has-media"],"yoast_head":"\nMixed Circuit Device Simulation of Single Event Upset in a Memory Cell - Silvaco<\/title>\n<meta name=\"description\" content=\"This article presents Single Event Upset (SEU) simulation of a SRAM cell using\u00a0MixedMode3D. MixedMode3D\u00a0provides the capability\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/silvaco.com\/ja\/simulation-standard\/mixed-circuit-device-simulation-of-single-event-upset-in-a-memory-cell\/\" \/>\n<meta property=\"og:locale\" content=\"ja_JP\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"Mixed Circuit Device Simulation of Single Event Upset in a Memory Cell\" \/>\n<meta property=\"og:description\" content=\"This article presents Single Event Upset (SEU) simulation of a SRAM cell using\u00a0MixedMode3D. MixedMode3D\u00a0provides the capability\" \/>\n<meta property=\"og:url\" content=\"https:\/\/silvaco.com\/ja\/simulation-standard\/mixed-circuit-device-simulation-of-single-event-upset-in-a-memory-cell\/\" \/>\n<meta property=\"og:site_name\" content=\"Silvaco\" \/>\n<meta property=\"article:publisher\" content=\"https:\/\/www.facebook.com\/SilvacoSoftware\/\" \/>\n<meta property=\"article:published_time\" content=\"1999-02-02T16:50:27+00:00\" \/>\n<meta property=\"article:modified_time\" content=\"2026-10-15T21:42:09+00:00\" \/>\n<meta property=\"og:image\" content=\"https:\/\/silvaco.com\/wp-content\/uploads\/simulationstandard\/simstd_feb_1999_a2.jpg\" \/>\n\t<meta property=\"og:image:width\" content=\"1286\" \/>\n\t<meta property=\"og:image:height\" content=\"1669\" \/>\n\t<meta property=\"og:image:type\" content=\"image\/jpeg\" \/>\n<meta name=\"author\" content=\"Casey Molver\" \/>\n<meta name=\"twitter:card\" content=\"summary_large_image\" \/>\n<meta name=\"twitter:creator\" content=\"@SilvacoSoftware\" \/>\n<meta name=\"twitter:site\" content=\"@SilvacoSoftware\" \/>\n<meta name=\"twitter:label1\" content=\"\u57f7\u7b46\u8005\" \/>\n\t<meta name=\"twitter:data1\" content=\"Casey Molver\" \/>\n\t<meta name=\"twitter:label2\" content=\"\u63a8\u5b9a\u8aad\u307f\u53d6\u308a\u6642\u9593\" \/>\n\t<meta name=\"twitter:data2\" content=\"1 minute\" \/>\n<script type=\"application\/ld+json\" class=\"yoast-schema-graph\">{\"@context\":\"https:\\\/\\\/schema.org\",\"@graph\":[{\"@type\":\"Article\",\"@id\":\"https:\\\/\\\/silvaco.com\\\/ja\\\/simulation-standard\\\/mixed-circuit-device-simulation-of-single-event-upset-in-a-memory-cell\\\/#article\",\"isPartOf\":{\"@id\":\"https:\\\/\\\/silvaco.com\\\/ja\\\/simulation-standard\\\/mixed-circuit-device-simulation-of-single-event-upset-in-a-memory-cell\\\/\"},\"author\":{\"name\":\"Casey Molver\",\"@id\":\"https:\\\/\\\/silvaco.com\\\/ja\\\/#\\\/schema\\\/person\\\/2763eb741ca5ac04477fdff50ed84c80\"},\"headline\":\"Mixed Circuit Device Simulation of Single Event Upset in a Memory Cell\",\"datePublished\":\"1999-02-02T16:50:27+00:00\",\"dateModified\":\"2026-10-15T21:42:09+00:00\",\"mainEntityOfPage\":{\"@id\":\"https:\\\/\\\/silvaco.com\\\/ja\\\/simulation-standard\\\/mixed-circuit-device-simulation-of-single-event-upset-in-a-memory-cell\\\/\"},\"wordCount\":163,\"image\":{\"@id\":\"https:\\\/\\\/silvaco.com\\\/ja\\\/simulation-standard\\\/mixed-circuit-device-simulation-of-single-event-upset-in-a-memory-cell\\\/#primaryimage\"},\"thumbnailUrl\":\"https:\\\/\\\/silvaco.com\\\/wp-content\\\/uploads\\\/simulationstandard\\\/simstd_feb_1999_a2.jpg\",\"articleSection\":[\"Simulation Standard\"],\"inLanguage\":\"ja\"},{\"@type\":\"WebPage\",\"@id\":\"https:\\\/\\\/silvaco.com\\\/ja\\\/simulation-standard\\\/mixed-circuit-device-simulation-of-single-event-upset-in-a-memory-cell\\\/\",\"url\":\"https:\\\/\\\/silvaco.com\\\/ja\\\/simulation-standard\\\/mixed-circuit-device-simulation-of-single-event-upset-in-a-memory-cell\\\/\",\"name\":\"Mixed Circuit Device Simulation of Single Event Upset in a Memory Cell - Silvaco\",\"isPartOf\":{\"@id\":\"https:\\\/\\\/silvaco.com\\\/ja\\\/#website\"},\"primaryImageOfPage\":{\"@id\":\"https:\\\/\\\/silvaco.com\\\/ja\\\/simulation-standard\\\/mixed-circuit-device-simulation-of-single-event-upset-in-a-memory-cell\\\/#primaryimage\"},\"image\":{\"@id\":\"https:\\\/\\\/silvaco.com\\\/ja\\\/simulation-standard\\\/mixed-circuit-device-simulation-of-single-event-upset-in-a-memory-cell\\\/#primaryimage\"},\"thumbnailUrl\":\"https:\\\/\\\/silvaco.com\\\/wp-content\\\/uploads\\\/simulationstandard\\\/simstd_feb_1999_a2.jpg\",\"datePublished\":\"1999-02-02T16:50:27+00:00\",\"dateModified\":\"2026-10-15T21:42:09+00:00\",\"author\":{\"@id\":\"https:\\\/\\\/silvaco.com\\\/ja\\\/#\\\/schema\\\/person\\\/2763eb741ca5ac04477fdff50ed84c80\"},\"description\":\"This article presents Single Event Upset (SEU) simulation of a SRAM cell using\u00a0MixedMode3D. 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