{"id":29663,"date":"1999-07-01T17:55:37","date_gmt":"1999-07-01T17:55:37","guid":{"rendered":"https:\/\/silvaco.com\/uncategorized\/new-soi-utmost-module\/"},"modified":"2021-07-08T18:45:45","modified_gmt":"2021-07-09T01:45:45","slug":"new-soi-utmost-module","status":"publish","type":"post","link":"https:\/\/silvaco.com\/ja\/simulation-standard\/new-soi-utmost-module\/","title":{"rendered":"New SOI UTMOST Module"},"content":{"rendered":"
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New SOI\u00a0UTMOST<\/i>\u00a0Module<\/h1>\n

Introduction<\/p>\n

Bulk CMOS is currently the dominant technology for VLSI integrated circuits but its scaling constraints pose ever greater as device geometries shrink. Thus, the search for a suitable replacement has begun, and Silicon-On-Insulator (SOI) technology seems to become the most attractive candidate for a suitable VLSI\/CMOS technology.<\/p>\n

The SOI technology differs significantly from the bulk technology due to the burried oxide. Because of this specific structure, SOI MOSFETs exhibit many anomalous static and dynamic effects which can be attributed to either the floating body or to self heating. Consequently, in addition to the usual Bulk MOSFET, several other characteristics must be observed to characterize correctly and accurately SOI devices. SOI utmost module has been improved accordingly to these criteria, and is presented in this article.<\/p>\n<\/div><\/section><\/div>

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