{"id":29634,"date":"1999-11-03T18:39:55","date_gmt":"1999-11-03T18:39:55","guid":{"rendered":"https:\/\/silvaco.com\/uncategorized\/modelling-tunneling-currents-in-ultra-thin-oxides\/"},"modified":"2026-10-15T14:39:19","modified_gmt":"2026-10-15T21:39:19","slug":"modelling-tunneling-currents-in-ultra-thin-oxides","status":"publish","type":"post","link":"https:\/\/silvaco.com\/ja\/simulation-standard\/modelling-tunneling-currents-in-ultra-thin-oxides\/","title":{"rendered":"Modelling Tunneling Currents in Ultra Thin Oxides"},"content":{"rendered":"<h1>Modelling Tunneling Currents in Ultra Thin Oxides<\/h1>\n<p class=\"feature\">1. Introduction<\/p>\n<p>Ever decreasing minimum geometries in MOSFET design results in a corresponding reduction in the thickness of the gate oxide. This is an inevitable result of the increasing doping levels in the channel that are required to prevent depletion from the drain becoming too high a percentage of the total device length. For these new aggressive technologies, the required ultra thin gate oxides suffer a significant oxide tunnelling component. It has therefore become important to include this component in device modelling.<\/p>\n<p>For some time now, Silvaco has had models to deal with current conduction through oxides. It is only recently, however, that the number of questions to the customer support groups related to gate tunnelling effects has been increasing. It is appropriate, therefore to re-address this issue at this time.<\/p>\n<p>There are two types of models in Silvaco&#8217;s device simulator,\u00a0<b><i>ATLAS<\/i><\/b>, which address oxide current conduction.<\/p>\n<p><img loading=\"lazy\" width=\"1286\" height=\"1669\" src=\"https:\/\/silvaco.com\/wp-content\/uploads\/simulationstandard\/simstd_nov_1999_a3.jpg\" class=\"cleaned-enfold-image\" alt=\"\" decoding=\"async\" loading=\"lazy\" srcset=\"https:\/\/silvaco.com\/wp-content\/uploads\/simulationstandard\/simstd_nov_1999_a3.jpg 1286w, https:\/\/silvaco.com\/wp-content\/uploads\/simulationstandard\/simstd_nov_1999_a3-231x300.jpg 231w, https:\/\/silvaco.com\/wp-content\/uploads\/simulationstandard\/simstd_nov_1999_a3-794x1030.jpg 794w, https:\/\/silvaco.com\/wp-content\/uploads\/simulationstandard\/simstd_nov_1999_a3-768x997.jpg 768w, https:\/\/silvaco.com\/wp-content\/uploads\/simulationstandard\/simstd_nov_1999_a3-1184x1536.jpg 1184w, https:\/\/silvaco.com\/wp-content\/uploads\/simulationstandard\/simstd_nov_1999_a3-1156x1500.jpg 1156w, https:\/\/silvaco.com\/wp-content\/uploads\/simulationstandard\/simstd_nov_1999_a3-543x705.jpg 543w, https:\/\/silvaco.com\/wp-content\/uploads\/simulationstandard\/simstd_nov_1999_a3-29x37.jpg 29w, https:\/\/silvaco.com\/wp-content\/uploads\/simulationstandard\/simstd_nov_1999_a3-42x55.jpg 42w, https:\/\/silvaco.com\/wp-content\/uploads\/simulationstandard\/simstd_nov_1999_a3-37x48.jpg 37w\" sizes=\"auto, (max-width: 1286px) 100vw, 1286px\" \/><\/p>\n<p><a href=\"https:\/\/silvaco.com\/dynamicweb\/jsp\/downloads\/DownloadDocStepsAction.do?req=download&#038;nm=simstd_nov_1999_a3.pdf\" class=\"BGT-btn\" target=\"_blank\" rel=\"noopener noreferrer\">Download Simulation Standard<\/a><\/p>\n","protected":false},"excerpt":{"rendered":"<p>Ever decreasing minimum geometries in MOSFET design results in a corresponding reduction in the thickness of the gate oxide. This is an inevitable result of the increasing doping levels in the channel that are required to prevent depletion from the drain becoming too high a percentage of the total device length. For these new aggressive technologies, the required ultra thin gate oxides suffer a significant oxide tunnelling component. It has therefore become important to include this component in device modelling.<\/p>\n","protected":false},"author":12,"featured_media":22307,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"inline_featured_image":false,"footnotes":""},"categories":[7570],"tags":[],"class_list":["post-29634","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-simulation-standard","entry","has-media"],"yoast_head":"<!-- This site is optimized with the Yoast SEO Premium plugin v28.7 (Yoast SEO v28.7) - https:\/\/yoast.com\/product\/yoast-seo-premium-wordpress\/ -->\n<title>Modelling Tunneling Currents in Ultra Thin Oxides - Silvaco<\/title>\n<meta name=\"description\" content=\"Ever decreasing minimum geometries in MOSFET design results in a corresponding reduction in the thickness of the gate oxide\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/silvaco.com\/ja\/simulation-standard\/modelling-tunneling-currents-in-ultra-thin-oxides\/\" \/>\n<meta property=\"og:locale\" content=\"ja_JP\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"Modelling Tunneling Currents in Ultra Thin Oxides\" \/>\n<meta property=\"og:description\" content=\"Ever decreasing minimum geometries in MOSFET design results in a corresponding reduction in the thickness of the gate oxide\" \/>\n<meta property=\"og:url\" content=\"https:\/\/silvaco.com\/ja\/simulation-standard\/modelling-tunneling-currents-in-ultra-thin-oxides\/\" \/>\n<meta property=\"og:site_name\" content=\"Silvaco\" \/>\n<meta property=\"article:publisher\" content=\"https:\/\/www.facebook.com\/SilvacoSoftware\/\" \/>\n<meta property=\"article:published_time\" content=\"1999-11-03T18:39:55+00:00\" \/>\n<meta property=\"article:modified_time\" content=\"2026-10-15T21:39:19+00:00\" \/>\n<meta property=\"og:image\" content=\"https:\/\/silvaco.com\/wp-content\/uploads\/simulationstandard\/simstd_nov_1999_a3.jpg\" \/>\n\t<meta property=\"og:image:width\" content=\"1286\" \/>\n\t<meta property=\"og:image:height\" content=\"1669\" \/>\n\t<meta property=\"og:image:type\" content=\"image\/jpeg\" \/>\n<meta name=\"author\" content=\"Casey Molver\" \/>\n<meta name=\"twitter:card\" content=\"summary_large_image\" \/>\n<meta name=\"twitter:creator\" content=\"@SilvacoSoftware\" \/>\n<meta name=\"twitter:site\" content=\"@SilvacoSoftware\" \/>\n<meta name=\"twitter:label1\" content=\"\u57f7\u7b46\u8005\" \/>\n\t<meta name=\"twitter:data1\" content=\"Casey Molver\" \/>\n\t<meta name=\"twitter:label2\" content=\"\u63a8\u5b9a\u8aad\u307f\u53d6\u308a\u6642\u9593\" \/>\n\t<meta name=\"twitter:data2\" content=\"1 minute\" \/>\n<script type=\"application\/ld+json\" class=\"yoast-schema-graph\">{\"@context\":\"https:\\\/\\\/schema.org\",\"@graph\":[{\"@type\":\"Article\",\"@id\":\"https:\\\/\\\/silvaco.com\\\/ja\\\/simulation-standard\\\/modelling-tunneling-currents-in-ultra-thin-oxides\\\/#article\",\"isPartOf\":{\"@id\":\"https:\\\/\\\/silvaco.com\\\/ja\\\/simulation-standard\\\/modelling-tunneling-currents-in-ultra-thin-oxides\\\/\"},\"author\":{\"name\":\"Casey Molver\",\"@id\":\"https:\\\/\\\/silvaco.com\\\/ja\\\/#\\\/schema\\\/person\\\/2763eb741ca5ac04477fdff50ed84c80\"},\"headline\":\"Modelling Tunneling Currents in Ultra Thin Oxides\",\"datePublished\":\"1999-11-03T18:39:55+00:00\",\"dateModified\":\"2026-10-15T21:39:19+00:00\",\"mainEntityOfPage\":{\"@id\":\"https:\\\/\\\/silvaco.com\\\/ja\\\/simulation-standard\\\/modelling-tunneling-currents-in-ultra-thin-oxides\\\/\"},\"wordCount\":164,\"image\":{\"@id\":\"https:\\\/\\\/silvaco.com\\\/ja\\\/simulation-standard\\\/modelling-tunneling-currents-in-ultra-thin-oxides\\\/#primaryimage\"},\"thumbnailUrl\":\"https:\\\/\\\/silvaco.com\\\/wp-content\\\/uploads\\\/simulationstandard\\\/simstd_nov_1999_a3.jpg\",\"articleSection\":[\"Simulation Standard\"],\"inLanguage\":\"ja\"},{\"@type\":\"WebPage\",\"@id\":\"https:\\\/\\\/silvaco.com\\\/ja\\\/simulation-standard\\\/modelling-tunneling-currents-in-ultra-thin-oxides\\\/\",\"url\":\"https:\\\/\\\/silvaco.com\\\/ja\\\/simulation-standard\\\/modelling-tunneling-currents-in-ultra-thin-oxides\\\/\",\"name\":\"Modelling Tunneling Currents in Ultra Thin Oxides - 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