{"id":29476,"date":"2002-07-01T22:46:37","date_gmt":"2002-07-01T22:46:37","guid":{"rendered":"https:\/\/silvaco.com\/uncategorized\/a-new-surface-potentials-based-mosfet-model-hisim\/"},"modified":"2021-07-08T18:39:33","modified_gmt":"2021-07-09T01:39:33","slug":"a-new-surface-potentials-based-mosfet-model-hisim","status":"publish","type":"post","link":"https:\/\/silvaco.com\/ja\/simulation-standard\/a-new-surface-potentials-based-mosfet-model-hisim\/","title":{"rendered":"A New Surface-Potentials Based MOSFET Model: HiSIM"},"content":{"rendered":"<div id='template_overview'  class='avia-section main_color avia-section-small avia-no-border-styling  avia-bg-style-scroll  avia-builder-el-0  el_before_av_section  avia-builder-el-first   container_wrap fullsize' style='background-color: #ffffff;  margin-top:0px; margin-bottom:0px; '  ><div class='container' ><main  role=\"main\" itemprop=\"mainContentOfPage\"  class='template-page content  av-content-full alpha units'><div class='post-entry post-entry-type-page post-entry-29476'><div class='entry-content-wrapper clearfix'>\n<div class='flex_column_table av-equal-height-column-flextable -flextable' style='margin-top:20px; margin-bottom:0px; '><div class=\"flex_column av_three_fourth  flex_column_table_cell av-equal-height-column av-align-top first  avia-builder-el-1  el_before_av_one_fourth  avia-builder-el-first  \" style='padding:0px 0px 0px 0px ; border-radius:0px; '><section class=\"av_textblock_section \"  itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/BlogPosting\" itemprop=\"blogPost\" ><div class='avia_textblock  '   itemprop=\"text\" ><h1>A New Surface-Potentials Based MOSFET Model: HiSIM<\/h1>\n<h3>Introduction<\/h3>\n<p>HiSIM is based on a charge-sheet model. IDS current is described using only one equation, and there-fore is continuous over the whole range of operating regions. This improves MOSFETs modeling regarding at least two points. Equations are continuous over all operation regions, as well as their derivatives. This is a key point for today\u2019s analog circuits, where performance is very much dependent on high order derivatives. Parameter number is dramatically reduced (by a factor 5) for the same level of accuracy. Parameters are not interdependent anymore, making extraction easier. Furthermore, a set of parameters is valid for all channel lengths.<\/p>\n<\/div><\/section><\/div><div class='av-flex-placeholder'><\/div><div class=\"flex_column av_one_fourth  flex_column_table_cell av-equal-height-column av-align-top av-zero-column-padding   avia-builder-el-3  el_after_av_three_fourth  avia-builder-el-last  \" style='border-radius:0px; ' id=\"whitepaper\" ><p><div  class='avia-builder-widget-area clearfix  avia-builder-el-4  el_before_av_image  avia-builder-el-first '><div id=\"nav_menu-29\" class=\"widget clearfix widget_nav_menu\"><div class=\"menu-simulation-standard-side-menu-japanese-container\"><ul id=\"menu-simulation-standard-side-menu-japanese\" class=\"menu\"><li id=\"menu-item-26253\" class=\"menu-item menu-item-type-post_type menu-item-object-page menu-item-26253\"><a href=\"https:\/\/silvaco.com\/ja\/technical-library\/simulation-standard\/\">Simulation Standard<\/a><\/li>\n<\/ul><\/div><\/div><\/div><br \/>\n<div  class='avia-image-container  av-styling-    avia-builder-el-5  el_after_av_sidebar  el_before_av_button  avia-align-center '  itemprop=\"image\" itemscope=\"itemscope\" itemtype=\"https:\/\/schema.org\/ImageObject\"  ><div class='avia-image-container-inner'><div class='avia-image-overlay-wrap'><a href=\"\/dynamicweb\/jsp\/downloads\/DownloadDocStepsAction.do?req=download&amp;nm=simstd_jul_2002_a2.pdf\" class='avia_image' target=\"_blank\" rel=\"noopener noreferrer\"><img decoding=\"async\" width=\"1281\" height=\"1669\" class='wp-image-21935 avia-img-lazy-loading-not-21935 avia_image' src=\"https:\/\/silvaco.com\/wp-content\/uploads\/simulationstandard\/simstd_jul_2002_a2.jpg\" alt='' title='simstd_jul_2002_a2'  itemprop=\"thumbnailUrl\" srcset=\"https:\/\/silvaco.com\/wp-content\/uploads\/simulationstandard\/simstd_jul_2002_a2.jpg 1281w, https:\/\/silvaco.com\/wp-content\/uploads\/simulationstandard\/simstd_jul_2002_a2-230x300.jpg 230w, https:\/\/silvaco.com\/wp-content\/uploads\/simulationstandard\/simstd_jul_2002_a2-791x1030.jpg 791w, https:\/\/silvaco.com\/wp-content\/uploads\/simulationstandard\/simstd_jul_2002_a2-768x1001.jpg 768w, https:\/\/silvaco.com\/wp-content\/uploads\/simulationstandard\/simstd_jul_2002_a2-1179x1536.jpg 1179w, https:\/\/silvaco.com\/wp-content\/uploads\/simulationstandard\/simstd_jul_2002_a2-1151x1500.jpg 1151w, https:\/\/silvaco.com\/wp-content\/uploads\/simulationstandard\/simstd_jul_2002_a2-541x705.jpg 541w, https:\/\/silvaco.com\/wp-content\/uploads\/simulationstandard\/simstd_jul_2002_a2-28x37.jpg 28w, https:\/\/silvaco.com\/wp-content\/uploads\/simulationstandard\/simstd_jul_2002_a2-42x55.jpg 42w, https:\/\/silvaco.com\/wp-content\/uploads\/simulationstandard\/simstd_jul_2002_a2-37x48.jpg 37w\" sizes=\"(max-width: 1281px) 100vw, 1281px\" \/><\/a><\/div><\/div><\/div><br \/>\n<div  class='avia-button-wrap avia-button-center  avia-builder-el-6  el_after_av_image  avia-builder-el-last ' ><a href='\/dynamicweb\/jsp\/downloads\/DownloadDocStepsAction.do?req=download&amp;nm=simstd_jul_2002_a2.pdf' class='avia-button  avia-color-grey   avia-icon_select-yes-right-icon avia-size-small avia-position-center ' target=\"_blank\" rel=\"noopener noreferrer\"><span class='avia_iconbox_title' >Download Simulation Standard<\/span><span class='avia_button_icon avia_button_icon_right' aria-hidden='true' data-av_icon='\ue875' data-av_iconfont='entypo-fontello'><\/span><\/a><\/div><\/p><\/div><\/div><!--close column table wrapper. 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Autoclose: 1 -->\n<\/p>\n","protected":false},"excerpt":{"rendered":"<p>HiSIM is based on a charge-sheet model. IDS current is described using only one equation, and there-fore is continuous over the whole range of operating regions. This improves MOSFETs modeling regarding at least two points. Equations are continuous over all operation regions, as well as their derivatives. This is a key point for today\u2019s analog circuits, where performance is very much dependent on high order derivatives. Parameter number is dramatically reduced (by a factor 5) for the same level of accuracy. Parameters are not interdependent anymore, making extraction easier. Furthermore, a set of parameters is valid for all channel lengths.<\/p>\n","protected":false},"author":2,"featured_media":21935,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[7570],"tags":[],"yoast_head":"<!-- This site is optimized with the Yoast SEO Premium plugin v24.0 (Yoast SEO v24.0) - https:\/\/yoast.com\/wordpress\/plugins\/seo\/ -->\n<title>A New Surface-Potentials Based MOSFET Model: HiSIM - \u30b7\u30eb\u30d0\u30b3\u30fb\u30b8\u30e3\u30d1\u30f3 : Silvaco Japan<\/title>\n<meta name=\"description\" content=\"HiSIM is based on a charge-sheet model. 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