{"id":29165,"date":"2006-08-01T00:02:55","date_gmt":"2006-08-01T00:02:55","guid":{"rendered":"https:\/\/silvaco.com\/uncategorized\/atlas-device-simulation-of-amorphous-oxide-semiconductor-thin-film-transistors\/"},"modified":"2026-10-15T14:17:04","modified_gmt":"2026-10-15T21:17:04","slug":"atlas-device-simulation-of-amorphous-oxide-semiconductor-thin-film-transistors","status":"publish","type":"post","link":"https:\/\/silvaco.com\/ja\/simulation-standard\/atlas-device-simulation-of-amorphous-oxide-semiconductor-thin-film-transistors\/","title":{"rendered":"Atlas Device Simulation of Amorphous Oxide Semiconductor Thin-Film Transistors"},"content":{"rendered":"

Atlas Device Simulation of Amorphous Oxide Semiconductor Thin-Film Transistors<\/h1>\n

1. Introduction<\/h3>\n

Amorphous oxide semiconductor materials have attracted much attention as key components of TFTs for flexible electronics [1]. The advantages of such materials include flexibility and transparency which are compatible with plastic substrates, and higher mobilities than those of amorphous-Si and organic semiconductor TFT materials.<\/p>\n

In this paper, the operation of an amorphous oxide semiconductor TFT was analyzed by the two-dimensional numerical simulator\u00a0ATLAS<\/em><\/strong>\u00a0to verify the applicability of standard drift-diffusion models to an amorphous oxide semiconductor material.<\/p>\n

2. The Device Structure and Models<\/h3>\n

An amorphous oxide semiconductor TFT fabricated and reported by Nomura et al. [2] was simulated and resultant ID-VD and ID-VG curves were compared with measured data.<\/p>\n

The device structure reported is shown in Figure 1. Top gate structure was adopted. Amorphous In-Ga-ZnO (a-IGZO) channel layer was fabricated on a polyethylene terephthalate (PET) sheet. A high-k dielectric Y2<\/sub>O3<\/sub>\u00a0material for gate insulator and transparent indium-tin oxide (ITO) material for the source, drain and gate electrodes were deposited. The channel length and width are 50 \u00b5m and 200 \u00b5m respectively.<\/p>\n

In order to grasp the fundamentals needed to describe a-IGZO TFT electrical behavior, models which are as simple as possible were selected and their parameters were calibrated as follows:<\/p>\n

For all the ITO electrodes, Schottky contact model with work function of 4.6 eV were chosen. For the a-IGZO material, an acceptor type density of states model with no doping, constant electron mobility model of 8.0 cm2<\/sup>\/(Vsec), and band-to-band tunneling model were assumed.<\/p>\n

Figure 2 shows the energy distribution of acceptor type density of states used. Unlike amorphous-Si or many organic materials, slope of tail state is quite gentle and peak density of states is located not at band edges but around mid-gap.<\/p>\n

\"\"<\/p>\n

Download Simulation Standard<\/a><\/p>\n","protected":false},"excerpt":{"rendered":"

1. Introduction<\/p>\n

Amorphous oxide semiconductor materials have attracted much attention as key components of TFTs for flexible electronics [1]. The advantages of such materials include flexibility and transparency which are compatible with plastic substrates, and higher mobilities than those of amorphous-Si and organic semiconductor TFT materials.<\/p>\n","protected":false},"author":12,"featured_media":21650,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"inline_featured_image":false,"footnotes":""},"categories":[7570],"tags":[],"class_list":["post-29165","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-simulation-standard","entry","has-media"],"yoast_head":"\nAtlas Device Simulation of Amorphous Oxide Semiconductor Thin-Film Transistors - Silvaco<\/title>\n<meta name=\"description\" content=\"Amorphous oxide semiconductor materials have attracted much attention as key components of TFTs for flexible electronics [1].\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/silvaco.com\/ja\/simulation-standard\/atlas-device-simulation-of-amorphous-oxide-semiconductor-thin-film-transistors\/\" \/>\n<meta property=\"og:locale\" content=\"ja_JP\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"Atlas Device Simulation of Amorphous Oxide Semiconductor Thin-Film Transistors\" \/>\n<meta property=\"og:description\" content=\"Amorphous oxide semiconductor materials have attracted much attention as key components of TFTs for flexible electronics [1].\" \/>\n<meta property=\"og:url\" content=\"https:\/\/silvaco.com\/ja\/simulation-standard\/atlas-device-simulation-of-amorphous-oxide-semiconductor-thin-film-transistors\/\" \/>\n<meta property=\"og:site_name\" content=\"Silvaco\" \/>\n<meta property=\"article:publisher\" content=\"https:\/\/www.facebook.com\/SilvacoSoftware\/\" \/>\n<meta property=\"article:published_time\" content=\"2006-08-01T00:02:55+00:00\" \/>\n<meta property=\"article:modified_time\" content=\"2026-10-15T21:17:04+00:00\" \/>\n<meta property=\"og:image\" content=\"https:\/\/silvaco.com\/wp-content\/uploads\/simulationstandard\/simstd_aug_2006_a2.jpg\" \/>\n\t<meta property=\"og:image:width\" content=\"1344\" \/>\n\t<meta property=\"og:image:height\" content=\"1669\" \/>\n\t<meta property=\"og:image:type\" content=\"image\/jpeg\" \/>\n<meta name=\"author\" content=\"Casey Molver\" \/>\n<meta name=\"twitter:card\" content=\"summary_large_image\" \/>\n<meta name=\"twitter:creator\" content=\"@SilvacoSoftware\" \/>\n<meta name=\"twitter:site\" content=\"@SilvacoSoftware\" \/>\n<meta name=\"twitter:label1\" content=\"\u57f7\u7b46\u8005\" \/>\n\t<meta name=\"twitter:data1\" content=\"Casey Molver\" \/>\n\t<meta name=\"twitter:label2\" content=\"\u63a8\u5b9a\u8aad\u307f\u53d6\u308a\u6642\u9593\" \/>\n\t<meta name=\"twitter:data2\" content=\"1 minute\" \/>\n<script type=\"application\/ld+json\" class=\"yoast-schema-graph\">{\"@context\":\"https:\\\/\\\/schema.org\",\"@graph\":[{\"@type\":\"Article\",\"@id\":\"https:\\\/\\\/silvaco.com\\\/ja\\\/simulation-standard\\\/atlas-device-simulation-of-amorphous-oxide-semiconductor-thin-film-transistors\\\/#article\",\"isPartOf\":{\"@id\":\"https:\\\/\\\/silvaco.com\\\/ja\\\/simulation-standard\\\/atlas-device-simulation-of-amorphous-oxide-semiconductor-thin-film-transistors\\\/\"},\"author\":{\"name\":\"Casey Molver\",\"@id\":\"https:\\\/\\\/silvaco.com\\\/ja\\\/#\\\/schema\\\/person\\\/2763eb741ca5ac04477fdff50ed84c80\"},\"headline\":\"Atlas Device Simulation of Amorphous Oxide Semiconductor Thin-Film Transistors\",\"datePublished\":\"2006-08-01T00:02:55+00:00\",\"dateModified\":\"2026-10-15T21:17:04+00:00\",\"mainEntityOfPage\":{\"@id\":\"https:\\\/\\\/silvaco.com\\\/ja\\\/simulation-standard\\\/atlas-device-simulation-of-amorphous-oxide-semiconductor-thin-film-transistors\\\/\"},\"wordCount\":298,\"image\":{\"@id\":\"https:\\\/\\\/silvaco.com\\\/ja\\\/simulation-standard\\\/atlas-device-simulation-of-amorphous-oxide-semiconductor-thin-film-transistors\\\/#primaryimage\"},\"thumbnailUrl\":\"https:\\\/\\\/silvaco.com\\\/wp-content\\\/uploads\\\/simulationstandard\\\/simstd_aug_2006_a2.jpg\",\"articleSection\":[\"Simulation Standard\"],\"inLanguage\":\"ja\"},{\"@type\":\"WebPage\",\"@id\":\"https:\\\/\\\/silvaco.com\\\/ja\\\/simulation-standard\\\/atlas-device-simulation-of-amorphous-oxide-semiconductor-thin-film-transistors\\\/\",\"url\":\"https:\\\/\\\/silvaco.com\\\/ja\\\/simulation-standard\\\/atlas-device-simulation-of-amorphous-oxide-semiconductor-thin-film-transistors\\\/\",\"name\":\"Atlas Device Simulation of Amorphous Oxide Semiconductor Thin-Film Transistors - 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