{"id":29157,"date":"2006-08-01T00:05:38","date_gmt":"2006-08-01T00:05:38","guid":{"rendered":"https:\/\/silvaco.com\/uncategorized\/how-to-obtain-a-stable-grid-and-smooth-doping-profile-in-non-planar-a-si-tft-using-athena-elite\/"},"modified":"2021-07-08T18:24:58","modified_gmt":"2021-07-09T01:24:58","slug":"how-to-obtain-a-stable-grid-and-smooth-doping-profile-in-non-planar-a-si-tft-using-athena-elite","status":"publish","type":"post","link":"https:\/\/silvaco.com\/ja\/simulation-standard\/how-to-obtain-a-stable-grid-and-smooth-doping-profile-in-non-planar-a-si-tft-using-athena-elite\/","title":{"rendered":"How to obtain a stable grid and smooth doping profile in non-planar a-Si TFT using Athena\/Elite?"},"content":{"rendered":"
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Hints, Tips and Solutions – August 2006<\/h1>\n

Q.<\/strong>\u00a0How to obtain a stable grid and smooth doping profile in non-planar a-Si TFT using\u00a0ATHENA\/Elite<\/em>?<\/p>\n

A.<\/strong>\u00a0Silvaco process and device simulation tools have been successfully used for many TFT applications. It has been shown that if accurate density of state distributions are specified the transfer characteristics of TFT devices show good agreement with experiments. The typical configuration of TFT includes a non-planar n+ doping source\/drain region around the metal gate. Such a non-planar structure could be simulated only by the process simulator\u00a0ATHENA<\/em><\/strong>\u00a0because\u00a0ATLAS<\/em><\/strong>\u00a0cannot generate the regions with rounded shapes.<\/p>\n

The accuracy of\u00a0ATLAS<\/em><\/strong>\u00a0device simulation strongly depends on grid quality and uniformity of doping along the surface of a-Si region. The internal\u00a0SSuprem4<\/strong><\/em>\u00a0deposition algorithm does not produce a smooth grid and consequently uniform doping. To overcome this difficulty the advanced topography simulation module of\u00a0ATHENA<\/em><\/strong>\u00a0must be used for a-Si deposition step.\u00a0Elite<\/em><\/strong>\u00a0produces much better grid and avoids non-uniform doping as seen in the left plot of Figure 1.<\/p>\n

Figure 2 shows that experimentally proved IV-curves can only be obtained when\u00a0Elite<\/em><\/strong>\u00a0module is used for simulation of the critical a-Si deposition step. If\u00a0Elite<\/em><\/strong>\u00a0is not used the reverse biased trend of the IV-curve disappears which means that these characteristics are very sensitive to the grid and doping quality. Therefore, we strongly recommend to use\u00a0Elite<\/em><\/strong>\u00a0deposition for simulation of non-planar TFT devices.<\/p>\n<\/div><\/section><\/div>

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