{"id":29116,"date":"2009-04-01T15:34:16","date_gmt":"2009-04-01T15:34:16","guid":{"rendered":"https:\/\/silvaco.com\/uncategorized\/sonos-sanos-simulation-in-atlas\/"},"modified":"2026-10-16T09:04:58","modified_gmt":"2026-10-16T16:04:58","slug":"sonos-sanos-simulation-in-atlas","status":"publish","type":"post","link":"https:\/\/silvaco.com\/ja\/simulation-standard\/sonos-sanos-simulation-in-atlas\/","title":{"rendered":"SONOS\/SANOS Simulation in ATLAS"},"content":{"rendered":"<h1>SONOS\/SANOS Simulation in ATLAS<\/h1>\n<p style=\"color: #000000; font-size: medium; font-style: normal; font-variant-ligatures: normal; font-variant-caps: normal; font-weight: 400; letter-spacing: normal; orphans: 2; text-align: start; text-indent: 0px; text-transform: none; white-space: normal; widows: 2; word-spacing: 0px; -webkit-text-stroke-width: 0px; text-decoration-style: initial; text-decoration-color: initial;\"><strong>1. Introduction<\/strong><\/p>\n<p style=\"color: #000000; font-size: medium; font-style: normal; font-variant-ligatures: normal; font-variant-caps: normal; font-weight: 400; letter-spacing: normal; orphans: 2; text-align: start; text-indent: 0px; text-transform: none; white-space: normal; widows: 2; word-spacing: 0px; -webkit-text-stroke-width: 0px; text-decoration-style: initial; text-decoration-color: initial;\">Semiconductor-Oxide-Nitride-Oxide-Semiconductor (SONOS) Non-Volatile memory structures can be simulated using ATLAS. The basic principle of these devices is the use of a charge trapping Silicon Nitride layer embedded in the oxide layer separating the gate from the channel. This results in an oxide layer between the gate and the Silicon Nitride layer, and another between the Nitride layer and the semiconducting channel (Figure 1). The Silicon Nitride layer can be charged by quantum mechanical tunneling or by hot carrier injection. This results in a shift in the turn-on voltage of the NVM device. The trapped charge can be discharged by quantum mechanical tunneling or by injecting hot carriers of the opposite polarity, thereby erasing the threshold Voltage shift.[1] [2]<\/p>\n<p><img loading=\"lazy\" width=\"782\" height=\"1012\" src=\"https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/simstd_Q2_2009_a1.jpg\" class=\"cleaned-enfold-image\" alt=\"\" decoding=\"async\" loading=\"lazy\" srcset=\"https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/simstd_Q2_2009_a1.jpg 782w, https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/simstd_Q2_2009_a1-232x300.jpg 232w, https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/simstd_Q2_2009_a1-768x994.jpg 768w, https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/simstd_Q2_2009_a1-545x705.jpg 545w, https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/simstd_Q2_2009_a1-29x37.jpg 29w, https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/simstd_Q2_2009_a1-43x55.jpg 43w, https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/simstd_Q2_2009_a1-37x48.jpg 37w\" sizes=\"auto, (max-width: 782px) 100vw, 782px\" \/><\/p>\n<p><a href=\"https:\/\/silvaco.com\/dynamicweb\/jsp\/downloads\/DownloadDocStepsAction.do?req=download&#038;nm=simstd_Q2_2009_a1.pdf\" class=\"BGT-btn\" target=\"_blank\" rel=\"noopener noreferrer\">Download Simulation Standard<\/a><\/p>\n","protected":false},"excerpt":{"rendered":"<p>Semiconductor-Oxide-Nitride-Oxide-Semiconductor (SONOS) Non-Volatile memory structures can be simulated using ATLAS. The basic principle of these devices is the use of a charge trapping Silicon Nitride layer embedded in the oxide layer separating the gate from the channel. This results in an oxide layer between the gate and the Silicon Nitride layer, and another between the Nitride layer and the semiconducting channel (Figure 1). The Silicon Nitride layer can be charged by quantum mechanical tunneling or by hot carrier injection. This results in a shift in the turn-on voltage of the NVM device. The trapped charge can be discharged by quantum mechanical tunneling or by injecting hot carriers of the opposite polarity, thereby erasing the threshold Voltage shift.[1] [2]<\/p>\n","protected":false},"author":12,"featured_media":19802,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"inline_featured_image":false,"footnotes":""},"categories":[7570],"tags":[],"class_list":["post-29116","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-simulation-standard","entry","has-media"],"yoast_head":"<!-- This site is optimized with the Yoast SEO Premium plugin v28.7 (Yoast SEO v28.7) - https:\/\/yoast.com\/product\/yoast-seo-premium-wordpress\/ -->\n<title>SONOS\/SANOS Simulation in ATLAS - Silvaco<\/title>\n<meta name=\"description\" content=\"Semiconductor-Oxide-Nitride-Oxide-Semiconductor (SONOS) Non-Volatile memory structures can be simulated using ATLAS\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/silvaco.com\/ja\/simulation-standard\/sonos-sanos-simulation-in-atlas\/\" \/>\n<meta property=\"og:locale\" content=\"ja_JP\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"SONOS\/SANOS Simulation in ATLAS\" \/>\n<meta property=\"og:description\" content=\"Semiconductor-Oxide-Nitride-Oxide-Semiconductor (SONOS) Non-Volatile memory structures can be simulated using ATLAS\" \/>\n<meta property=\"og:url\" content=\"https:\/\/silvaco.com\/ja\/simulation-standard\/sonos-sanos-simulation-in-atlas\/\" \/>\n<meta property=\"og:site_name\" content=\"Silvaco\" \/>\n<meta property=\"article:publisher\" content=\"https:\/\/www.facebook.com\/SilvacoSoftware\/\" \/>\n<meta property=\"article:published_time\" content=\"2009-04-01T15:34:16+00:00\" \/>\n<meta property=\"article:modified_time\" content=\"2026-10-16T16:04:58+00:00\" \/>\n<meta property=\"og:image\" content=\"https:\/\/silvaco.com\/wp-content\/uploads\/2020\/03\/simstd_Q2_2009_a1.jpg\" \/>\n\t<meta property=\"og:image:width\" content=\"782\" \/>\n\t<meta property=\"og:image:height\" content=\"1012\" \/>\n\t<meta property=\"og:image:type\" content=\"image\/jpeg\" \/>\n<meta name=\"author\" content=\"Casey Molver\" \/>\n<meta name=\"twitter:card\" content=\"summary_large_image\" \/>\n<meta name=\"twitter:creator\" content=\"@SilvacoSoftware\" \/>\n<meta name=\"twitter:site\" content=\"@SilvacoSoftware\" \/>\n<meta name=\"twitter:label1\" content=\"\u57f7\u7b46\u8005\" \/>\n\t<meta name=\"twitter:data1\" content=\"Casey Molver\" \/>\n\t<meta name=\"twitter:label2\" content=\"\u63a8\u5b9a\u8aad\u307f\u53d6\u308a\u6642\u9593\" \/>\n\t<meta name=\"twitter:data2\" content=\"1 minute\" \/>\n<script type=\"application\/ld+json\" class=\"yoast-schema-graph\">{\"@context\":\"https:\\\/\\\/schema.org\",\"@graph\":[{\"@type\":\"Article\",\"@id\":\"https:\\\/\\\/silvaco.com\\\/ja\\\/simulation-standard\\\/sonos-sanos-simulation-in-atlas\\\/#article\",\"isPartOf\":{\"@id\":\"https:\\\/\\\/silvaco.com\\\/ja\\\/simulation-standard\\\/sonos-sanos-simulation-in-atlas\\\/\"},\"author\":{\"name\":\"Casey Molver\",\"@id\":\"https:\\\/\\\/silvaco.com\\\/ja\\\/#\\\/schema\\\/person\\\/2763eb741ca5ac04477fdff50ed84c80\"},\"headline\":\"SONOS\\\/SANOS Simulation in ATLAS\",\"datePublished\":\"2009-04-01T15:34:16+00:00\",\"dateModified\":\"2026-10-16T16:04:58+00:00\",\"mainEntityOfPage\":{\"@id\":\"https:\\\/\\\/silvaco.com\\\/ja\\\/simulation-standard\\\/sonos-sanos-simulation-in-atlas\\\/\"},\"wordCount\":130,\"image\":{\"@id\":\"https:\\\/\\\/silvaco.com\\\/ja\\\/simulation-standard\\\/sonos-sanos-simulation-in-atlas\\\/#primaryimage\"},\"thumbnailUrl\":\"https:\\\/\\\/silvaco.com\\\/wp-content\\\/uploads\\\/2020\\\/03\\\/simstd_Q2_2009_a1.jpg\",\"articleSection\":[\"Simulation Standard\"],\"inLanguage\":\"ja\"},{\"@type\":\"WebPage\",\"@id\":\"https:\\\/\\\/silvaco.com\\\/ja\\\/simulation-standard\\\/sonos-sanos-simulation-in-atlas\\\/\",\"url\":\"https:\\\/\\\/silvaco.com\\\/ja\\\/simulation-standard\\\/sonos-sanos-simulation-in-atlas\\\/\",\"name\":\"SONOS\\\/SANOS Simulation in ATLAS - 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